公开(公告)号：US20070257264A1

公开(公告)日：2007-11-08

申请号：US11559214

申请日：2006-11-13

申请人： Stephen Hersee ,  Xin Wang ,  Steven Brueck ,  Xinyu Sun

发明人： Stephen Hersee ,  Xin Wang ,  Steven Brueck ,  Xinyu Sun

IPC分类号： H01L33/00 ,  H01L31/0256

CPC分类号： G02B6/107 ,  B82Y20/00 ,  C30B23/00 ,  C30B25/00 ,  C30B29/60 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02521 ,  H01L21/0254 ,  H01L21/02603 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/0265 ,  H01L21/02664 ,  H01L33/007 ,  H01L33/08 ,  H01L2933/0083

摘要： Exemplary embodiments provide a scalable process for the growth of large scale and uniform III-N nanoneedle arrays with precise control of the position, cross sectional shape and/or dimensions for each nanoneedle. In an exemplary process, a plurality of nanoneedle array can be formed by growing one or more semiconductor material in a plurality of patterned rows of apertures with a predetermined geometry. The plurality of patterned rows of apertures can be formed though a thick selective nanoscale growth mask, which can later be removed to expose the plurality of nanoneedle arrays. The plurality of nanoneedle arrays can be connected top and bottom by a continuous coalesced epitaxial film, which can be used in a planar semiconductor process or be further configured as a photonic crystal to improve the output coupling of nanoscale optoelectronic devices such as LEDs and/or lasers.

摘要翻译： 示例性实施例提供了用于大规模和均匀的III-N纳米针阵列的生长的可缩放方法，其精确控制每个纳米针的位置，横截面形状和/或尺寸。 在示例性过程中，可以通过以预定几何形状在多个图案化的一排孔中生长一个或多个半导体材料来形成多个纳米针阵列。 可以通过厚的选择性纳米尺度生长掩模来形成多个图案化的孔排，其随后可被去除以暴露多个纳米针阵列。 多个纳米针阵列可以通过连续聚结的外延膜连接到顶部和底部，其可以用于平面半导体工艺中，或者被进一步配置为光子晶体，以改善纳米尺度光电子器件如LED和/或 激光器