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公开(公告)号：US06388314B1
公开(公告)日：2002-05-14
申请号：US08516171
申请日：1995-08-17
IPC分类号： H01L2352
CPC分类号： H01L23/528 , H01L2924/0002 , H01L2924/1815 , H01L2924/00
摘要： A 16 megabit (224) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.
摘要翻译： 描述了16兆比特（224）或更大密度的单沉积层金属动态随机存取存储器（DRAM）部件，其允许适用于工业标准的300ml宽SOJ（小外形J翼）封装或TSOP （薄型，小外形封装），与以前的双金属沉积分层16兆位DRAM设计相比，速度损失很少或没有速度损失。 这是通过使用允许单个金属层信号路径的管芯架构来实现的，以及引线框架的新颖使用以去除芯片的大部分功率，从而允许较小的速度优化的DRAM。 使用单个沉积层金属导致较低的生产成本和较短的生产时间。
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公开(公告)号：US5907166A
公开(公告)日：1999-05-25
申请号：US852905
申请日：1997-05-08
IPC分类号： G11C11/401 , H01L23/50 , H01L23/528 , H01L27/10 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： H01L23/528 , H01L2924/0002 , H01L2924/1815
摘要： A 16 megabit (2.sup.24) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.
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3.发明授权Method of making a single-deposition-layer-metal dynamic random access memory 失效制备单沉积层金属动态随机存取存储器的方法公开(公告)号：US06569727B1
公开(公告)日：2003-05-27
申请号：US08852909
申请日：1997-05-08
IPC分类号： H01L218242
CPC分类号： H01L23/528 , H01L2924/0002 , H01L2924/1815 , H01L2924/00
摘要： A 16 megabit (224) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.
摘要翻译： 描述了16兆比特（224）或更大密度的单沉积层金属动态随机存取存储器（DRAM）部件，其允许适用于工业标准的300ml宽SOJ（小外形J翼）封装或TSOP （薄型，小外形封装），与以前的双金属沉积分层16兆位DRAM设计相比，速度损失很少或没有速度损失。 这是通过使用允许单个金属层信号路径的管芯架构来实现的，以及引线框架的新颖使用以去除芯片的大部分功率，从而允许较小的速度优化的DRAM。 使用单个沉积层金属导致较低的生产成本和较短的生产时间。
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公开(公告)号：US06274928B1
公开(公告)日：2001-08-14
申请号：US08852911
申请日：1997-05-08
IPC分类号： H01L2352
CPC分类号： H01L23/528 , H01L2924/0002 , H01L2924/1815 , H01L2924/00
摘要： A 16 megabit (224) or greater density single deposition layer metal Dynamic Random Access Memory (DRAM) part is described which allows for a die that fits within an industry-standard 300 ml wide SOJ (Small Outline J-wing) package or a TSOP (Thin, Small Outline Package) with little or no speed loss over previous double metal deposition layered 16 megabit DRAM designs. This is accomplished using a die architecture which allows for a single metal layer signal path, together with the novel use of a lead frame to remove a substantial portion of the power busing from the die, allowing for a smaller, speed-optimized DRAM. The use of a single deposition layer metal results in lower production costs, and shorter production time.
摘要翻译： 描述了16兆比特（224）或更大密度的单沉积层金属动态随机存取存储器（DRAM）部件，其允许适用于工业标准的300ml宽SOJ（小外形J翼）封装或TSOP （薄型，小外形封装），与以前的双金属沉积分层16兆位DRAM设计相比，速度损失很少或没有速度损失。 这是通过使用允许单个金属层信号路径的管芯架构来实现的，以及引线框架的新颖使用以去除芯片的大部分功率，从而允许较小的速度优化的DRAM。 使用单个沉积层金属导致较低的生产成本和较短的生产时间。
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5.发明授权METHOD FOR STORING A TEMPERATURE THRESHOLD IN AN INTEGRATED CIRCUIT, METHOD FOR STORING A TEMPERATURE THRESHOLD IN A DYNAMIC RANDOM ACCESS MEMORY, METHOD OF MODIFYING DYNAMIC RANDOM ACCESS MEMORY OPERATION IN RESPONSE TO TEMPERATURE, PROGRAMMABLE TEMPERATURE SENSING CIRCUIT AND MEMORY INTEGRATED CIRCUIT 有权用于在一体化电路中存储温度阈值的方法，用于在动态随机存取存储器中存储温度阈值的方法，在温度，可编程温度感测电路和存储器集成电路中修改动态随机存取存储器操作的方法公开(公告)号：US06552945B2
公开(公告)日：2003-04-22
申请号：US09768897
申请日：2001-01-23
申请人： Christopher B. Cooper , Ming-Bo Liu , Chris G. Martin , Troy A. Manning , Stephen L. Casper , Charles H. Dennison , Brian M. Shirley , Brian L. Brown , Shubneesh Batra
发明人： Christopher B. Cooper , Ming-Bo Liu , Chris G. Martin , Troy A. Manning , Stephen L. Casper , Charles H. Dennison , Brian M. Shirley , Brian L. Brown , Shubneesh Batra
IPC分类号： G11C704
CPC分类号： G11C7/04 , G11C7/1045 , G11C7/20 , G11C11/4072 , G11C11/4078
摘要： A method for storing a temperature threshold in an integrated circuit includes measuring operating parameters of the integrated circuit versus temperature, calculating a maximum temperature at which the integrated circuit performance exceeds predetermined specifications and storing parameters corresponding to the maximum temperature in a comparison circuit in the integrated circuit by selectively blowing fusable devices in the comparison circuit. The fusable devices may be antifuses. As a result, the integrated circuit is able to provide signals to devices external to the integrated circuit to indicate that the integrated circuit may be too hot to operate properly.
摘要翻译： 一种用于在集成电路中存储温度阈值的方法包括：测量集成电路的相对于温度的操作参数，计算集成电路性能超过预定规格的最大温度，并将积分电路性能中最大温度的参数存储在集成电路中的比较电路中 通过在比较电路中选择性地吹入可熔设备。 可熔断器件可以是反熔丝。 因此，集成电路能够向集成电路外部的设备提供信号，以指示集成电路可能太热而无法正常工作。
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公开(公告)号：US06242782B1
公开(公告)日：2001-06-05
申请号：US09124283
申请日：1998-07-29
IPC分类号： H01L2994
CPC分类号： H01L21/765 , H01L21/823481 , H01L27/0207 , H01L27/088 , H01L27/10805 , Y10T307/839
摘要： The provision of an isolation gate connecting unassociated active areas of adjacent transistors formed in a semiconductor substrate provides effective isolation of the adjacent transistors with no additional process steps required. The isolation gate is tied to a reference to ensure that a channel between the unassociated active areas is not formed, and effective isolation is provided. The adjacent transistors are cross coupled to form sense amplifiers for dynamic random access memory devices.
摘要翻译： 连接在半导体衬底中形成的相邻晶体管的非相关有源区的隔离栅的提供不需要额外的工艺步骤来提供相邻晶体管的有效隔离。 隔离栅极连接到参考，以确保未形成非相关活动区域之间的通道，并提供有效的隔离。 相邻的晶体管被交叉耦合以形成用于动态随机存取存储器件的读出放大器。
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公开(公告)号：US06475851B1
公开(公告)日：2002-11-05
申请号：US09124478
申请日：1998-07-29
IPC分类号： H01L218238
CPC分类号： H01L21/765 , H01L21/823481 , H01L27/0207 , H01L27/088 , H01L27/10805 , Y10T307/839
摘要： Adjacent unassociated field-effect transistors are formed from a single continuous layer of uniformly doped material in a semiconductor substrate. An insulating layer is formed over the active layer. A number of gates in a conductive layer define the transistors. Forming a connection between one of the gates and a reference potential forms a boundary between the unassociated transistors across the active material by preventing carrier transport thereacross.
摘要翻译： 相邻的非相关场效应晶体管由半导体衬底中的均匀掺杂材料的单个连续层形成。 在有源层上形成绝缘层。 导电层中的多个栅极限定晶体管。 在一个栅极和参考电位之间形成连接，通过防止跨越其的载流子传输，形成跨过活性材料的非相关晶体管之间的边界。
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公开(公告)号：US5940339A
公开(公告)日：1999-08-17
申请号：US139852
申请日：1998-08-25
IPC分类号： G11C7/06 , G11C11/4091 , G11C7/02 , G11C7/00
CPC分类号： G11C7/06 , G11C11/4091
摘要： A circuit and method for limiting voltage swing on the complementary bit lines of a memory device. Complementary bit lines of the memory device are coupled to a sense amplifier through first and second p-channel isolation devices. A low voltage is applied to a gate of the p-channel isolation devices to activate the p-channel isolation devices such that one of the first and second p-channel isolation devices establishes the low logic level on one of the complementary bit lines at a voltage that limits the swing on the complementary bit lines.
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9.发明授权METHOD OF STORING A TEMPERATURE THRESHOLD IN AN INTEGRATED CIRCUIT, METHOD OF MODIFYING OPERATION OF DYNAMIC RANDOM ACCESS MEMORY IN RESPONSE TO TEMPERATURE, PROGRAMMABLE TEMPERATURE SENSING CIRCUIT AND MEMORY INTEGRATED CIRCUIT 失效在集成电路中存储温度阈值的方法，对温度，可编程温度感测电路和存储器集成电路进行动态随机存取存储器操作的修改方法公开(公告)号：US06778453B2
公开(公告)日：2004-08-17
申请号：US10373498
申请日：2003-02-24
申请人： Christopher B. Cooper , Ming-Bo Liu , Chris G. Martin , Troy A. Manning , Stephen L. Casper , Charles H. Dennison , Brian M. Shirley , Brian L. Brown , Shubneesh Batra
发明人： Christopher B. Cooper , Ming-Bo Liu , Chris G. Martin , Troy A. Manning , Stephen L. Casper , Charles H. Dennison , Brian M. Shirley , Brian L. Brown , Shubneesh Batra
IPC分类号： G11C704
CPC分类号： G11C7/04 , G11C7/1045 , G11C7/20 , G11C11/4072 , G11C11/4078
摘要： A method for storing a temperature threshold in an integrated circuit includes measuring operating parameters of the integrated circuit versus temperature, calculating a maximum temperature at which the integrated circuit performance exceeds predetermined specifications and storing parameters corresponding to the maximum temperature in a comparison circuit in the integrated circuit by selectively blowing fusable devices in the comparison circuit. The fusable devices may be antifuses.
摘要翻译： 一种用于在集成电路中存储温度阈值的方法包括：测量集成电路的相对于温度的操作参数，计算集成电路性能超过预定规格的最大温度，并将集成电路性能中最高温度的参数存储在集成电路中的比较电路中 通过在比较电路中选择性地吹入可熔设备。 可熔断器件可以是反熔丝。
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10.发明授权Method of storing a temperature threshold in an integrated circuit, method of modifying operation of dynamic random access memory in response to temperature, programmable temperature sensing circuit and memory integrated circuit 有权在集成电路中存储温度阈值的方法，响应于温度修改动态随机存取存储器的操作的方法，可编程温度感测电路和存储器集成电路公开(公告)号：US06233190B1
公开(公告)日：2001-05-15
申请号：US09386075
申请日：1999-08-30
申请人： Christopher B. Cooper , Ming-Bo Liu , Chris G. Martin , Troy A. Manning , Stephen L. Casper , Charles H. Dennison , Brian M. Shirley , Brian L. Brown , Shubneesh Batra
发明人： Christopher B. Cooper , Ming-Bo Liu , Chris G. Martin , Troy A. Manning , Stephen L. Casper , Charles H. Dennison , Brian M. Shirley , Brian L. Brown , Shubneesh Batra
IPC分类号： G11C704
CPC分类号： G11C7/04 , G11C7/1045 , G11C7/20 , G11C11/4072 , G11C11/4078
摘要： A method for storing a temperature threshold in an integrated circuit includes measuring operating parameters of the integrated circuit versus temperature, calculating a maximum temperature at which the integrated circuit performance exceeds predetermined specifications and storing parameters corresponding to the maximum temperature in a comparison circuit in the integrated circuit by selectively blowing fusable devices in the comparison circuit. The fusable devices may be antifuses. As a result, the integrated circuit is able to provide signals to devices external to the integrated circuit to indicate that the integrated circuit may be too hot to operate properly.
摘要翻译： 一种用于在集成电路中存储温度阈值的方法包括：测量集成电路的相对于温度的操作参数，计算集成电路性能超过预定规格的最大温度，并将集成电路性能中最高温度的参数存储在集成电路中的比较电路中 通过在比较电路中选择性地吹入可熔设备。 可熔断器件可以是反熔丝。 因此，集成电路能够向集成电路外部的设备提供信号，以指示集成电路可能太热而无法正常工作。
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