公开(公告)号：US20120248419A1

公开(公告)日：2012-10-04

申请号：US13368040

申请日：2012-02-07

申请人： Mark Thompson ,  Siyi Wang ,  Lincoln Hall ,  Viacheslav V. Diev ,  Stephen R. Forrest ,  Guodan Wei ,  Xin Xiao

发明人： Mark Thompson ,  Siyi Wang ,  Lincoln Hall ,  Viacheslav V. Diev ,  Stephen R. Forrest ,  Guodan Wei ,  Xin Xiao

IPC分类号： C07C211/55 ,  H01L51/40 ,  H01L51/54 ,  C07D209/86 ,  C07C211/58

CPC分类号： H01L51/0072 ,  B82Y10/00 ,  C07C2601/04 ,  C09B57/007 ,  C09B57/008 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1029 ,  H01G9/2059 ,  H01L51/0046 ,  H01L51/0058 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0071 ,  H01L51/4246 ,  Y02E10/549

摘要： There is disclosed squaraine compounds of formula I: wherein each of Y1 and Y2 is independently chosen from an optionally substituted amino group and an optionally substituted aryl group. Also described are organic optoelectronic devices comprising a Donor-Acceptor heterojunction that is formed from one or more of the squaraine compounds. A method of making the disclosed device, which may include one or more sublimation step for depositing said squaraine compound, is also disclosed.

摘要翻译： 公开了式I的方酸基化合物：其中Y1和Y2各自独立地选自任选取代的氨基和任选取代的芳基。 还描述了包含由一种或多种方酸化合物形成的供体 - 受体异质结的有机光电子器件。 还公开了制造所公开的装置的方法，其可以包括用于沉积所述方酸化合物的一个或多个升华步骤。

公开(公告)号：US07750425B2

公开(公告)日：2010-07-06

申请号：US11598006

申请日：2006-11-13

申请人： Stephen R. Forrest ,  Guodan Wei

发明人： Stephen R. Forrest ,  Guodan Wei

IPC分类号： H01L27/14

CPC分类号： H01L31/035236 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L31/09 ,  H01L31/18

摘要： A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

摘要翻译： 多层第一半导体材料和多个点阵栅栏栅栏布置在第一电极和第二电极之间的堆叠中。 每个栅栏围栏屏障基本上由第二半导体材料的多个量子点组成，该第二半导体材料嵌入在与第三半导体材料的两层直接接触之间。 量子点的波函数作为至少一个中间带重叠。 第三半导体材料的层被布置为隧道势垒，以在第一材料的层中需要第一电子和/或第一孔，以进行量子力学隧道以在相应量子点内到达第二材料，并且要​​求 在第一半导体材料的层中的第二电子和/或第二孔，以进行量子力学隧道以到达第一半导体材料的另一层。

公开(公告)号：US20100084011A1

公开(公告)日：2010-04-08

申请号：US12567633

申请日：2009-09-25

申请人： Stephen R. Forrest ,  Brian E. Lassiter ,  Guodan Wei

发明人： Stephen R. Forrest ,  Brian E. Lassiter ,  Guodan Wei

IPC分类号： H01L51/44 ,  H01L51/48

CPC分类号： H01L27/302 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0053 ,  H01L51/0078 ,  H01L51/4246 ,  H01L51/4253 ,  H01L2251/308 ,  Y02E10/549 ,  Y02P70/521

摘要： There is disclosed an organic photovoltaic device comprising two or more organic photoactive regions located between a first electrode and a second electrode, wherein each of the organic photoactive regions comprise a donor, and an acceptor, and wherein the organic photovoltaic device comprises at least one exciton blocking layer, and at least one charge recombination layer, or charge transfer layer between the two or more photoactive regions. It has been discovered that a high open circuit voltage can been obtained for organic tandem solar cells according to this disclosure. Methods of making and methods of using are also disclosed.

摘要翻译： 公开了一种有机光伏器件，其包括位于第一电极和第二电极之间的两个或更多个有机光活性区域，其中每个有机光活性区域包括供体和受体，并且其中所述有机光伏器件包括至少一个激子 阻挡层和至少一个电荷复合层，或两个或更多个光活性区域之间的电荷转移层。 已经发现，根据本公开，可以获得用于有机串联太阳能电池的高开路电压。 还公开了制备方法和使用方法。

公开(公告)号：US09768402B2

公开(公告)日：2017-09-19

申请号：US13080759

申请日：2011-04-06

申请人： Stephen R. Forrest ,  Mark E. Thompson ,  Guodan Wei ,  Siyi Wang

发明人： Stephen R. Forrest ,  Mark E. Thompson ,  Guodan Wei ,  Siyi Wang

IPC分类号： H01L51/52 ,  H01L51/00 ,  H01L51/42

CPC分类号： H01L51/4253 ,  H01L51/0028 ,  H01L51/4273 ,  Y02E10/549

摘要： A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

公开(公告)号：US07915521B2

公开(公告)日：2011-03-29

申请号：US11869954

申请日：2007-10-10

申请人： Stephen R. Forrest ,  Guodan Wei ,  Kuen-Ting Shiu

发明人： Stephen R. Forrest ,  Guodan Wei ,  Kuen-Ting Shiu

IPC分类号： H01L31/042 ,  H01L31/00 ,  H01L21/00

CPC分类号： B82Y30/00 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/0735 ,  Y02E10/544 ,  Y10S977/932 ,  Y10S977/948

摘要： A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type II band alignment. A method for fabricating such a device is also provided.

摘要翻译： 一种器件包括半导体材料的多个栅栏层和第二半导体材料的量子点的多个交替层，该第二半导体材料的第二半导体材料的交替层被嵌入在与p型和n型之间的堆叠中的第三半导体材料之间并直接接触 半导体材料。 第二半导体材料的每个量子点和第三半导体材料形成具有II型带对准的异质结。 还提供了一种用于制造这种装置的方法。

公开(公告)号：US20130210189A1

公开(公告)日：2013-08-15

申请号：US13080759

申请日：2011-04-06

申请人： Stephen R. Forrest ,  Mark E. Thompson ,  Guodan Wei ,  Siyi Wang

发明人： Stephen R. Forrest ,  Mark E. Thompson ,  Guodan Wei ,  Siyi Wang

IPC分类号： H01L51/42

CPC分类号： H01L51/4253 ,  H01L51/0028 ,  H01L51/4273 ,  Y02E10/549

摘要： A method of preparing a bulk heterojunction organic photovoltaic cell through combinations of thermal and solvent vapor annealing are described. Bulk heterojunction films may prepared by known methods such as spin coating, and then exposed to one or more vaporized solvents and thermally annealed in an effort to enhance the crystalline nature of the photoactive materials.

摘要翻译： 描述了通过热和溶剂蒸汽退火的组合制备本体异质结有机光伏电池的方法。 本体异质结膜可以通过已知的方法例如旋涂来制备，然后暴露于一种或多种蒸发的溶剂并进行热退火，以增强光活性材料的结晶性质。

公开(公告)号：US20090095349A1

公开(公告)日：2009-04-16

申请号：US11869954

申请日：2007-10-10

申请人： Stephen R. Forrest ,  Guodan Wei ,  Kuen-Ting Shiu

发明人： Stephen R. Forrest ,  Guodan Wei ,  Kuen-Ting Shiu

IPC分类号： H01L31/0264 ,  H01L21/04

CPC分类号： B82Y30/00 ,  H01L31/03046 ,  H01L31/035281 ,  H01L31/0735 ,  Y02E10/544 ,  Y10S977/932 ,  Y10S977/948

摘要： A device comprises a plurality of fence layers of a semiconductor material and a plurality of alternating layers of quantum dots of a second semiconductor material embedded between and in direct contact with a third semiconductor material disposed in a stack between a p-type and n-type semiconductor material. Each quantum dot of the second semiconductor material and the third semiconductor material form a heterojunction having a type II band alignment. A method for fabricating such a device is also provided.

摘要翻译： 一种器件包括半导体材料的多个栅栏层和第二半导体材料的量子点的多个交替层，该第二半导体材料的第二半导体材料的交替层被嵌入在与p型和n型之间的堆叠中的第三半导体材料之间并直接接触 半导体材料。 第二半导体材料的每个量子点和第三半导体材料形成具有II型带对准的异质结。 还提供了一种用于制造这种装置的方法。

公开(公告)号：US20070151592A1

公开(公告)日：2007-07-05

申请号：US11598006

申请日：2006-11-13

申请人： Stephen R. Forrest ,  Guodan Wei

发明人： Stephen R. Forrest ,  Guodan Wei

IPC分类号： H02N6/00

CPC分类号： H01L31/035236 ,  B82Y10/00 ,  B82Y15/00 ,  B82Y20/00 ,  H01L31/09 ,  H01L31/18

摘要： A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

摘要翻译： 多层第一半导体材料和多个点阵栅栏栅栏布置在第一电极和第二电极之间的堆叠中。 每个栅栏围栏屏障基本上由第二半导体材料的多个量子点组成，该第二半导体材料嵌入在与第三半导体材料的两层直接接触之间。 量子点的波函数作为至少一个中间带重叠。 第三半导体材料的层被布置为隧道势垒，以在第一材料的层中需要第一电子和/或第一孔，以进行量子力学隧道以在相应量子点内到达第二材料，并且要​​求 在第一半导体材料的层中的第二电子和/或第二孔，以进行量子力学隧道以到达第一半导体材料的另一层。

公开(公告)号：US08828866B1

公开(公告)日：2014-09-09

申请号：US13927460

申请日：2013-06-26

申请人： Guodan Wei ,  Paul F. Ma

发明人： Guodan Wei ,  Paul F. Ma

IPC分类号： H01L21/4763 ,  H01L21/44 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C23C16/34 ,  H01L21/321 ,  H01L21/76829 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/823842 ,  H01L29/456

摘要： Provided are methods of forming a ternary metal nitride film and more specifically, a TaSiN film. A metal nitride film, or TaN film, is deposited on a substrate with plasma treatment. A SiN layer is deposited on the metal nitride, or TaN, film to form a metal-SiN, or TaSiN, film. The film is then annealed to provide a metal nitride film with stable resistivity.

摘要翻译： 提供了形成三元金属氮化物膜的方法，特别是TaSiN膜。 金属氮化物膜或TaN膜通过等离子体处理沉积在衬底上。 在金属氮化物或TaN膜上沉积SiN层以形成金属SiN或TaSiN膜。 然后将膜退火以提供具有稳定电阻率的金属氮化物膜。

公开(公告)号：US20140220772A1

公开(公告)日：2014-08-07

申请号：US14169937

申请日：2014-01-31

申请人： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

发明人： Annamalai Lakshmanan ,  Ben-Li Sheu ,  Guodan Wei ,  Nicole Lundy ,  Paul F. Ma

IPC分类号： H01L21/768

CPC分类号： H01L21/76856 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76841 ,  H01L21/76844 ,  H01L21/76862 ,  H01L21/76867 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

摘要翻译： 描述了用于控制诸如TaN，TiN和MnN的金属氮化物膜的掺杂的方法。 可以控制沉积金属氮化物膜期间的温度以提供允许期望量的掺杂的膜密度。 掺杂剂可以包括Ru，Cu，Co，Mn，Mo，Al，Mg，Cr，Nb，Ta，Ti和V.金属氮化物膜可以任选地在掺杂后暴露于等离子体处理。