公开(公告)号：US20090104719A1

公开(公告)日：2009-04-23

申请号：US11877312

申请日：2007-10-23

申请人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

发明人： Atul Gupta ,  Timothy Miller ,  Harold M. Persing ,  Daniel Distaso ,  Vikram Singh

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  H01L22/12

摘要： A method of in-situ monitoring of a plasma doping process includes generating a plasma comprising dopant ions in a chamber proximate to a platen supporting a substrate. A platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. A dose of ions attracted to the substrate is measured. At least one sensor measurement is performed to determine the condition of the plasma chamber. In addition, at least one plasma process parameter is modified in response to the measured dose and in response to the at least one sensor measurement.

摘要翻译： 等离子体掺杂过程的原位监测方法包括在靠近支撑衬底的压板的腔室中产生包含掺杂剂离子的等离子体。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 测量吸附到基底的一定剂量的离子。 执行至少一个传感器测量以确定等离子体室的状态。 此外，至少一个等离子体处理参数响应于测量的剂量并且响应于至少一个传感器测量而被修改。

公开(公告)号：US07397048B2

公开(公告)日：2008-07-08

申请号：US11227079

申请日：2005-09-16

申请人： Vikram Singh ,  Edmund J. Winder ,  Harold M. Persing ,  Timothy Jerome Miller ,  Ziwei Fang ,  Atul Gupta

发明人： Vikram Singh ,  Edmund J. Winder ,  Harold M. Persing ,  Timothy Jerome Miller ,  Ziwei Fang ,  Atul Gupta

IPC分类号： H05H1/42

CPC分类号： H01L21/2236 ,  H01J37/32082 ,  H01J37/32412 ,  H01L21/26513

摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

摘要翻译： 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

公开(公告)号：US20090104761A1

公开(公告)日：2009-04-23

申请号：US11875062

申请日：2007-10-19

申请人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

发明人： Yongbae Jeon ,  Vikram Singh ,  Timothy Miller ,  Ziwei Fang ,  Steven Walther ,  Atul Gupta

IPC分类号： H01L21/26 ,  C23C16/513

CPC分类号： H01J37/32642 ,  H01J37/32412 ,  H01J37/32935

摘要： A method of plasma doping includes generating a plasma comprising dopant ions proximate to a platen supporting a substrate in a plasma chamber. The platen is biased with a bias voltage waveform having a negative potential that attracts ions in the plasma to the substrate for plasma doping. At least one sensor measuring data related to charging conditions favorable for forming an electrical discharge is monitored. At least one plasma process parameter is modified in response to the measured data, thereby reducing a probability of forming an electrical discharge.

摘要翻译： 等离子体掺杂的方法包括产生等离子体，该等离子体包括邻近于在等离子体室中支撑衬底的压板的掺杂剂离子。 压板被具有负电位的偏压电压波形偏置，其将等离子体中的离子吸引到用于等离子体掺杂的衬底。 监测至少一个测量与有利于形成放电的充电条件有关的数据的传感器。 响应于测量数据修改至少一个等离子体处理参数，从而降低形成放电的可能性。

公开(公告)号：US20070087574A1

公开(公告)日：2007-04-19

申请号：US11163307

申请日：2005-10-13

申请人： Atul Gupta ,  Vikram Singh ,  Timothy Miller ,  Edmund Winder

发明人： Atul Gupta ,  Vikram Singh ,  Timothy Miller ,  Edmund Winder

IPC分类号： H01L21/31 ,  H01L21/469 ,  B05C11/00

CPC分类号： H01J37/32623 ,  H01J37/32412 ,  H01J37/32697 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/26526 ,  H01L21/26586 ,  H01L29/66803

摘要： A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.

摘要翻译： 掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。 惰性进料气体产生惰性离子。 向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

公开(公告)号：US20060063360A1

公开(公告)日：2006-03-23

申请号：US11227079

申请日：2005-09-16

申请人： Vikram Singh ,  Edmund Winder ,  Harold Persing ,  Timothy Miller ,  Ziwei Fang ,  Atul Gupta

发明人： Vikram Singh ,  Edmund Winder ,  Harold Persing ,  Timothy Miller ,  Ziwei Fang ,  Atul Gupta

IPC分类号： H01L21/04

CPC分类号： H01L21/2236 ,  H01J37/32082 ,  H01J37/32412 ,  H01L21/26513

摘要： A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.

摘要翻译： 公开了硼注入技术。 在一个特定的示例性实施例中，该技术可以由用于硼注入的装置来实现。 该装置可以包括反应室。 该装置还可以包含耦合到反应室的五硼烷的源，其中源能够将基本上纯的形式的五硼烷供应到反应室中。 该装置还可以包括电源，其被配置为充分激发反应室中的五硼烷以产生具有含硼离子的等离子体放电。

公开(公告)号：US07524743B2

公开(公告)日：2009-04-28

申请号：US11163307

申请日：2005-10-13

申请人： Atul Gupta ,  Vikram Singh ,  Timothy Miller ,  Edmund Jacques Winder

发明人： Atul Gupta ,  Vikram Singh ,  Timothy Miller ,  Edmund Jacques Winder

IPC分类号： H01L21/423 ,  H01L21/425

CPC分类号： H01J37/32623 ,  H01J37/32412 ,  H01J37/32697 ,  H01L21/2236 ,  H01L21/26506 ,  H01L21/26526 ,  H01L21/26586 ,  H01L29/66803

摘要： A method of doping includes depositing a layer of dopant material on nonplanar and planar features of a substrate. Inert ions are generated from an inert feed gas. The inert ions are extracted towards the substrate where they physically knock the dopant material into both the planar and nonplanar features of the substrate.

摘要翻译： 掺杂的方法包括在衬底的非平面和平面特征上沉积掺杂剂材料层。 惰性进料气体产生惰性离子。 向衬底提取惰性离子，在衬底上物理地将掺杂剂材料敲入衬底的平面和非平面特征。

公开(公告)号：US20070224840A1

公开(公告)日：2007-09-27

申请号：US11687822

申请日：2007-03-19

申请人： Anthony Renau ,  Vikram Singh ,  Atul Gupta ,  Timothy Miller ,  Edwin Arevalo ,  George Papasouliotis ,  Yong Bae Jeon

发明人： Anthony Renau ,  Vikram Singh ,  Atul Gupta ,  Timothy Miller ,  Edwin Arevalo ,  George Papasouliotis ,  Yong Bae Jeon

IPC分类号： H01L21/00 ,  H01L21/336 ,  H01L21/22 ,  H01L21/38

CPC分类号： H01J37/32935 ,  H01J37/32412 ,  H01J37/3299 ,  H01L22/20

摘要： A method of selecting plasma doping process parameters includes determining a recipe parameter database for achieving at least one plasma doping condition. The initial recipe parameters are determined from the recipe parameter database. In-situ measurements of at least one plasma doping condition are performed. The in-situ measurements of the at least one plasma doping condition are correlated to at least one plasma doping result. At least one recipe parameter is changed in response to the correlation so as to improve at least one plasma doping process performance metric.

摘要翻译： 选择等离子体掺杂工艺参数的方法包括确定用于实现至少一种等离子体掺杂条件的配方参数数据库。 从配方参数数据库确定初始配方参数。 进行至少一个等离子体掺杂条件的原位测量。 至少一种等离子体掺杂条件的原位测量与至少一种等离子体掺杂结果相关。 响应于相关性改变至少一个配方参数，以便改进至少一个等离子体掺杂工艺性能度量。

公开(公告)号：US20050287307A1

公开(公告)日：2005-12-29

申请号：US10874944

申请日：2004-06-23

申请人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

发明人： Vikram Singh ,  Harold Persing ,  Timothy Miller ,  Atul Gupta ,  Ziwei Fang

IPC分类号： C03C15/00 ,  C23C14/00 ,  H01L21/223

CPC分类号： H01L21/2236 ,  H01J37/32412

摘要： A method for ion implantation of a substrate includes forming a plasma from at least one implant material comprising at least one implant species, implanting the at least one implant species into a surface of the substrate, and directing at least one surface-modifying species at the surface to reduce a surface damage associated with the plasma. An apparatus for ion implantation is configured to implement this method.

摘要翻译： 用于离子植入衬底的方法包括从至少一种植入材料形成等离子体，所述至少一种植入材料包括至少一种植入物种，将所述至少一种植入物种植入所述基质的表面，以及将所述至少一种表面改性物质 表面以减少与等离子体相关的表面损伤。 用于离子注入的装置被配置为实现该方法。

公开(公告)号：US20080245957A1

公开(公告)日：2008-10-09

申请号：US11695747

申请日：2007-04-03

申请人： Atul Gupta ,  Jay Scheuer ,  Daniel Distaso ,  Antonella Cucchetti ,  William G. Callahan

发明人： Atul Gupta ,  Jay Scheuer ,  Daniel Distaso ,  Antonella Cucchetti ,  William G. Callahan

IPC分类号： G21K5/00 ,  G01D18/00

CPC分类号： H01J37/3171 ,  H01J37/3023 ,  H01J37/304 ,  H01J2237/30433

摘要： An approach that tunes an ion implanter for optimal performance is described. In one embodiment, there is a system for tuning an ion implanter having multiple beamline elements to generate an ion beam having desired beam properties. In this embodiment, the system comprises a beamline element settings controller configured to provide beamline element settings for generating the desired beam properties. A tuning model correlates the beamline element settings with beam properties. A calibration component is configured to calibrate the tuning model in response to a determination that beam properties measured from using the tuned beamline element settings differs from the determined tuned beamline element settings.

摘要翻译： 描述了调整离子注入机以获得最佳性能的方法。 在一个实施例中，存在用于调整具有多个束线元件的离子注入机的系统，以产生具有所需波束特性的离子束。 在该实施例中，系统包括被配置为提供用于产生所需光束特性的波束线元件设置的波束线元件设置控制器。 调谐模型将光束元素设置与光束属性相关联。 校准组件被配置为响应于从使用调谐的波束线元件设置测量的波束特性与所确定的调谐波束线元件设置不同的确定校准调谐模型。

公开(公告)号：US20070084564A1

公开(公告)日：2007-04-19

申请号：US11163303

申请日：2005-10-13

申请人： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

发明人： Atul Gupta ,  Edmund Winder ,  Vikram Singh ,  Harold Persing

IPC分类号： C23F1/00

CPC分类号： H01J37/321 ,  H01J37/32412 ,  H01L21/26513 ,  H01L21/26526 ,  H01L21/2658 ,  H01L21/26586 ,  H01L29/66803

摘要： A doping apparatus includes a chamber and a plasma source. The plasma source generates dopant ions from a feed gas and provides the dopant ions to the chamber. A platen is positioned in the chamber proximate to the plasma source. The platen supports a substrate having planar and nonplanar features. At least one of a pressure proximate to the substrate, a flow rate of the feed gas, a power of the plasma, and a voltage applied to the platen is chosen so that dopant ions are implanted into both the planar and non-planar nonplanar features surfaces of the substrate.

摘要翻译： 掺杂装置包括腔室和等离子体源。 等离子体源从进料气体产生掺杂剂离子，并将掺杂剂离子提供给室。 压板位于室中，靠近等离子体源。 压板支撑具有平面和非平面特征的衬底。 选择靠近衬底的压力，进料气体的流速，等离子体的功率和施加到压板的电压中的至少一个，使得掺杂剂离子注入平面和非平面非平面特征 基板的表面。