公开(公告)号：US20120120728A1

公开(公告)日：2012-05-17

申请号：US13191581

申请日：2011-07-27

申请人： Su-Kyoung KIM ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

发明人： Su-Kyoung KIM ,  Gil-Heyun Choi ,  Jong-Myeong Lee ,  In-Sun Park ,  Ji-Soon Park

IPC分类号： G11C11/34 ,  H01L21/336 ,  H01L29/788

CPC分类号： H01L29/7926 ,  G11C5/063 ,  G11C16/0483 ,  H01L27/11582

摘要： A non-volatile memory device is provided, including a substrate formed of a single crystalline semiconductor, pillar-shaped semiconductor patterns extending perpendicular to the substrate, a plurality of gate electrodes and a plurality of interlayer dielectric layers alternately stacked perpendicular to the substrate, and a charge spread blocking layer formed between the plurality of gate electrodes and the plurality of interlayer dielectric layers.

摘要翻译： 提供了一种非易失性存储器件，包括由单晶半导体形成的衬底，垂直于衬底延伸的柱状半导体图案，多个栅电极和与衬底垂直交替堆叠的多个层间电介质层，以及 形成在所述多个栅极电极和所述多个层间电介质层之间的电荷扩展阻挡层。