公开(公告)号：US20080285335A1

公开(公告)日：2008-11-20

申请号：US12127909

申请日：2008-05-28

申请人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-Kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

发明人： Bruce G. Elmegreen ,  Subramanian S. Iyer ,  Deok-Kee Kim ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park

IPC分类号： G11C11/00

CPC分类号： H01L27/2436 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/008 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1286 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的晶体管栅极级处的加热器元件，所述加热器元件还包括通过细线结构相对于电极连接的一对电极，所述加热器元件被配置为 接收通过其中的编程电流，设置在细线结构的一部分顶部的相变材料层以及被配置为感测相变材料的电阻的感测电路。

公开(公告)号：US20090065761A1

公开(公告)日：2009-03-12

申请号：US11850742

申请日：2007-09-06

申请人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

发明人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Chung Hon Lam ,  Lia Krusin-Elbaum ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

IPC分类号： H01L47/00 ,  H01L21/82

CPC分类号： H01L23/5256 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路 通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

公开(公告)号：US07633079B2

公开(公告)日：2009-12-15

申请号：US11850742

申请日：2007-09-06

申请人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

发明人： Kuang-Neng Chen ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns ,  Byeongju Park ,  Sampath Purushothaman

IPC分类号： H01L47/00

CPC分类号： H01L23/5256 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1286 ,  H01L45/1293 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： A programmable phase change material (PCM) structure includes a heater element formed at a BEOL level of a semiconductor device, the BEOL level including a low-K dielectric material therein; a first via in electrical contact with a first end of the heater element and a second via in electrical contact with a second end of the heater element, thereby defining a programming current path which passes through the first via, the heater element, and the second via; a PCM element disposed above the heater element, the PCM element configured to be programmed between a lower resistance crystalline state and a higher resistance amorphous state through the use of programming currents through the heater element; and a third via in electrical contact with the PCM element, thereby defining a sense current path which passes through the third via, the PCM element, the heater element, and the second via.

摘要翻译： 可编程相变材料（PCM）结构包括形成在半导体器件的BEOL级的加热器元件，BEOL级包括其中的低K电介质材料; 与加热器元件的第一端电接触的第一通孔和与加热器元件的第二端电接触的第二通孔，从而限定通过第一通孔，加热元件和第二通孔的编程电流通路 通过; 设置在所述加热器元件上方的PCM元件，所述PCM元件被配置为通过使用通过所述加热器元件的编程电流在较低电阻结晶状态和较高电阻非晶态之间被编程; 以及与PCM元件电接触的第三通孔，从而限定穿过第三通孔，PCM元件，加热器元件和第二通孔的感测电流路径。

公开(公告)号：US20090039331A1

公开(公告)日：2009-02-12

申请号：US11834851

申请日：2007-08-07

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L47/00 ,  G11C11/00

CPC分类号： G11C17/165 ,  G11C13/0004 ,  G11C13/0069 ,  G11C17/16 ,  G11C2013/0078 ,  G11C2013/008 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： Structures including a phase change material are disclosed. The structure may include a first electrode; a second electrode; a phase change material electrically connecting the first electrode and the second electrode for passing a current therethrough; and a tantalum nitride heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料的结构。 该结构可以包括第一电极; 第二电极; 电连接第一电极和第二电极以使电流通过的相变材料; 以及围绕所述相变材料的氮化钽加热器层，用于通过向所述相变材料施加第二电流来将所述相变材料转换成非晶态绝缘状态和结晶导电状态。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US07750335B2

公开(公告)日：2010-07-06

申请号：US11839724

申请日：2007-08-16

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L47/00

CPC分类号： H01L45/1683 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/165 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料和相关方法的结构。 该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US20090045388A1

公开(公告)日：2009-02-19

申请号：US11839724

申请日：2007-08-16

申请人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

发明人： Lawrence A. Clevenger ,  Bruce G. Elmegreen ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Lia Krusin-Elbaum ,  Chung H. Lam ,  Dennis M. Newns

IPC分类号： H01L45/00

CPC分类号： H01L45/1683 ,  G11C13/0004 ,  G11C17/16 ,  G11C17/165 ,  H01L45/06 ,  H01L45/1206 ,  H01L45/122 ,  H01L45/126 ,  H01L45/144 ,  H01L45/148

摘要： A structure including a phase change material and a related method are disclosed. The structure may include a first electrode; a second electrode; a third electrode; a phase change material electrically connecting the first, second and third electrodes for passing a first current through two of the first, second and third electrodes; and a refractory metal barrier heater layer about the phase change material for converting the phase change material between an amorphous, insulative state and a crystalline, conductive state by application of a second current to the phase change material. The structure may be used as a fuse or a phase change material random access memory (PRAM).

摘要翻译： 公开了包括相变材料和相关方法的结构。 该结构可以包括第一电极; 第二电极; 第三电极; 相变材料，电连接第一，第二和第三电极，用于使第一电流通过第一，第二和第三电极中的两个; 以及围绕所述相变材料的难熔金属阻挡加热器层，用于通过向相变材料施加第二电流来在非晶态绝缘状态和结晶导电状态之间转换相变材料。 该结构可以用作保险丝或相变材料随机存取存储器（PRAM）。

公开(公告)号：US07732893B2

公开(公告)日：2010-06-08

申请号：US11683071

申请日：2007-03-07

申请人： Subramanian S. Iyer ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Byeongju Park

发明人： Subramanian S. Iyer ,  Deok-Kee Kim ,  Chandrasekharan Kothandaraman ,  Byeongju Park

IPC分类号： H01L29/04 ,  H01L31/036

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.

摘要翻译： 本发明提供一种用于实现具有更高电阻值的后编程电阻分布并提高电熔丝编程的可靠性的电熔丝结构。 公开了在阴极中与掺杂了P掺杂的半导体材料结合在阴极中的未掺杂半导体材料的部分掺杂的电熔丝结构，并且示出了所公开的电熔丝的优异性能的数据。

公开(公告)号：US20080217733A1

公开(公告)日：2008-09-11

申请号：US11683071

申请日：2007-03-07

申请人： Subramanian S. Iyer ,  Deok-Kee Kim ,  Chandrasekara Kothandaraman ,  Byeongju Park

发明人： Subramanian S. Iyer ,  Deok-Kee Kim ,  Chandrasekara Kothandaraman ,  Byeongju Park

IPC分类号： H01L23/58

CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides an electrical fuse structure for achieving a post-programming resistance distribution with higher resistance values and to enhance the reliability of electrical fuse programming. A partly doped electrical fuse structure with undoped semiconductor material in the cathode combined with P-doped semiconductor material in the fuselink and anode is disclosed and the data supporting the superior performance of the disclosed electrical fuse is shown.

摘要翻译： 本发明提供一种用于实现具有更高电阻值的后编程电阻分布并提高电熔丝编程的可靠性的电熔丝结构。 公开了在阴极中与掺杂了P掺杂的半导体材料结合在阴极中的未掺杂半导体材料的部分掺杂的电熔丝结构，并且示出了所公开的电熔丝的优异性能的数据。

公开(公告)号：US07193262B2

公开(公告)日：2007-03-20

申请号：US10905094

申请日：2004-12-15

申请人： Herbert L. Ho ,  John E. Barth, Jr. ,  Ramachandra Divakaruni ,  Wayne F. Ellis ,  Johnathan E. Faltermeier ,  Brent A. Anderson ,  Subramanian S. Iyer ,  Deok-Kee Kim ,  Randy W. Mann ,  Paul C. Parries

发明人： Herbert L. Ho ,  John E. Barth, Jr. ,  Ramachandra Divakaruni ,  Wayne F. Ellis ,  Johnathan E. Faltermeier ,  Brent A. Anderson ,  Subramanian S. Iyer ,  Deok-Kee Kim ,  Randy W. Mann ,  Paul C. Parries

IPC分类号： H01L29/94 ,  H01L29/00

CPC分类号： H01L27/0805 ,  H01L29/66181 ,  H01L29/945

摘要： A novel trench-type decoupling capacitor structure and low-cost manufacturing process to create trench decoupling capacitors (decaps). In a unique aspect, the invention necessitates the addition of only a simplified trench to a base logic design.

摘要翻译： 一种新颖的沟槽型去耦电容器结构和低成本制造工艺，以创建沟槽去耦电容器（decaps）。 在一个独特的方面，本发明仅需要在基本逻辑设计中添加简化的沟槽。

公开(公告)号：US20090135640A1

公开(公告)日：2009-05-28

申请号：US11946450

申请日：2007-11-28

申请人： Deok-Kee Kim ,  Chuck Thuc Le ,  Byeongju Park

发明人： Deok-Kee Kim ,  Chuck Thuc Le ,  Byeongju Park

IPC分类号： G11C17/16

CPC分类号： G11C17/16

摘要： An electromigration-programmable semiconductor device may be programmed to increase the resistance or to decrease the resistance by selecting the amount of current passed through the electromigration-programmable semiconductor device. The electromigration-programmable semiconductor device comprises an anode, a cathode, and a link, each having a semiconductor portion and a metal semiconductor alloy portion. The metal semiconductor alloy portion of the link comprises two disjoined sub-portions with a gap therebetween. A low programming current fills the gap by electromigrating a small amount of metal semiconductor alloy from the cathode, A high programming current forms a large metal-semiconductor-alloy-deleted area in the cathode to increase the resistance. A tri-state programming is achieved by selecting the programming current level.

摘要翻译： 可以编程电迁移可编程半导体器件以通过选择通过电迁移可编程半导体器件的电流量来增加电阻或降低电阻。 电迁移可编程半导体器件包括阳极，阴极和链路，每个具有半导体部分和金属半导体合金部分。 连接件的金属半导体合金部分包括两个在它们之间具有间隙的分离的子部分。 低编程电流通过从阴极电解少量金属半导体合金来填充间隙。高编程电流在阴极中形成大的金属 - 半导体 - 合金缺失区域以增加电阻。 通过选择编程电流电平实现三态编程。