公开(公告)号：US20100075470A1

公开(公告)日：2010-03-25

申请号：US12550540

申请日：2009-08-31

申请人： Suguru OZAWA ,  Atsuo ISOBE ,  Takashi HAMADA ,  Junpei MOMO ,  Hiroaki HONDA ,  Takashi SHINGU ,  Tetsuya KAKEHATA

发明人： Suguru OZAWA ,  Atsuo ISOBE ,  Takashi HAMADA ,  Junpei MOMO ,  Hiroaki HONDA ,  Takashi SHINGU ,  Tetsuya KAKEHATA

IPC分类号： H01L21/336 ,  H01L21/762

CPC分类号： H01L21/76254

摘要： After a single crystal semiconductor layer provided over a base substrate by attaching is irradiated with a laser beam, characteristics thereof are improved by first heat treatment, and after adding an impurity element imparting conductivity to the single crystal semiconductor layer, second heat treatment is performed at lower temperature than that of the first heat treatment.

摘要翻译： 在通过附着设置在基底基板上的单晶半导体层通过激光照射之后，通过第一热处理来提高其特性，并且在向单晶半导体层添加赋予导电性的杂质元素之后，进行第二热处理 比第一次热处理温度低。

公开(公告)号：US20100081251A1

公开(公告)日：2010-04-01

申请号：US12557545

申请日：2009-09-11

申请人： Atsuo ISOBE ,  Junpei MOMO ,  Naoki OKUNO

发明人： Atsuo ISOBE ,  Junpei MOMO ,  Naoki OKUNO

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1222 ,  H01L29/66772

摘要： A single crystal semiconductor substrate is irradiated with accelerated ions to form an embrittled region in the single crystal semiconductor substrate. The single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween. The single crystal semiconductor substrate is separated at the embrittled region to form a semiconductor layer over the base substrate. Heat treatment is performed to reduce defects in the semiconductor layer. The semiconductor layer is then irradiated with laser light.

摘要翻译： 用单一晶体半导体衬底照射加速离子以在单晶半导体衬底中形成脆化区域。 单晶半导体衬底和基底衬底之间具有绝缘层而彼此接合。 在脆化区域分离单晶半导体衬底，以在基底衬底上形成半导体层。 进行热处理以减少半导体层中的缺陷。 然后用激光照射半导体层。

公开(公告)号：US20110053384A1

公开(公告)日：2011-03-03

申请号：US12872222

申请日：2010-08-31

申请人： Masaki KOYAMA ,  Kosei NEI ,  Toru HASEGAWA ,  Junpei MOMO ,  Eiji HIGA

发明人： Masaki KOYAMA ,  Kosei NEI ,  Toru HASEGAWA ,  Junpei MOMO ,  Eiji HIGA

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02052 ,  H01L21/268

摘要： An object is to provide a method for manufacturing an SOI substrate including a semiconductor film with high planarity and high crystallinity. After a single crystal semiconductor film is formed over an insulating film by a separation step, a natural oxide film existing on a surface of the semiconductor film is removed and the semiconductor film is irradiated with first laser light and second laser light under an inert gas atmosphere or a reduced-pressure atmosphere. The number of shots of the first laser light that is emitted to an arbitrary point in the semiconductor film is greater than or equal to 7, preferably greater than or equal to 10 and less than or equal to 100. The number of shots of the second laser light that is emitted to an arbitrary point in the semiconductor film is greater than 0 and less than or equal to 2.

摘要翻译： 本发明的目的是提供一种制造包括具有高平坦度和高结晶度的半导体膜的SOI衬底的方法。 在通过分离步骤在绝缘膜上形成单晶半导体膜之后，去除存在于半导体膜表面上的自然氧化膜，并在惰性气体气氛下用第一激光和第二激光照射半导体膜 或减压气氛。 发射到半导体膜中的任意点的第一激光的照射次数大于或等于7，优选大于或等于10并且小于或等于100.第二次的照射次数 发射到半导体膜中的任意点的激光大于0且小于或等于2。

公开(公告)号：US20120073984A1

公开(公告)日：2012-03-29

申请号：US13232001

申请日：2011-09-14

申请人： Yumiko SAITO ,  Junpei MOMO ,  Rie MATSUBARA ,  Hiroatsu TODORIKI

发明人： Yumiko SAITO ,  Junpei MOMO ,  Rie MATSUBARA ,  Hiroatsu TODORIKI

IPC分类号： C25F1/12

CPC分类号： C22B26/12 ,  C25C3/02 ,  H01M10/54 ,  Y02W30/84

摘要： An object is to recover metallic lithium from metallic lithium on which an unnecessary substance is formed without discarding the metallic lithium on which an unnecessary substance is formed. The present invention relates to a method for recovering metallic lithium in such a manner that metallic lithium on which a substance is formed is reacted with nitrogen to form lithium nitride; the lithium nitride is reacted with carbon dioxide to form lithium carbonate; the lithium carbonate is reacted with hydrochloric acid to form lithium chloride; the lithium chloride and potassium chloride are melted; and electrolysis is applied to the melted lithium chloride and potassium chloride.

摘要翻译： 目的是从不形成不需要的物质的金属锂中除去不需要的物质的金属锂中回收金属锂。 本发明涉及一种回收金属锂的方法，其中形成物质的金属锂与氮反应形成氮化锂; 使氮化锂与二氧化碳反应形成碳酸锂; 碳酸锂与盐酸反应形成氯化锂; 氯化锂和氯化钾熔化; 并对熔融的氯化锂和氯化钾进行电解。

公开(公告)号：US20100291754A1

公开(公告)日：2010-11-18

申请号：US12844224

申请日：2010-07-27

申请人： Masaki KOYAMA ,  Fumito ISAKA ,  Akihisa SHIMOMURA ,  Junpei MOMO

发明人： Masaki KOYAMA ,  Fumito ISAKA ,  Akihisa SHIMOMURA ,  Junpei MOMO

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/02675

摘要： A semiconductor substrate is irradiated with accelerated hydrogen ions, thereby forming a damaged region including a large amount of hydrogen. After a single crystal semiconductor substrate and a supporting substrate are bonded to each other, the semiconductor substrate is heated, so that the single crystal semiconductor substrate is separated in the damaged region. A single crystal semiconductor layer which is separated from the single crystal semiconductor substrate is irradiated with a laser beam. The single crystal semiconductor layer is melted by laser beam irradiation, whereby the single crystal semiconductor layer is recrystallized to recover its crystallinity and to planarized a surface of the single crystal semiconductor layer. After the laser beam irradiation, the single crystal semiconductor layer is heated at a temperature at which the single crystal semiconductor layer is not melted, so that the lifetime of the single crystal semiconductor layer is improved.

摘要翻译： 用加速的氢离子照射半导体衬底，从而形成包含大量氢的损伤区域。 在单晶半导体衬底和支撑衬底彼此接合之后，加热半导体衬底，使得单晶半导体衬底在损坏区域中分离。 用激光束照射与单晶半导体衬底分离的单晶半导体层。 通过激光束照射使单晶半导体层熔融，由此使单晶半导体层重结晶，回收其结晶性，并使单晶半导体层的表面平坦化。 在激光束照射之后，在单晶半导体层未熔融的温度下加热单晶半导体层，从而提高单晶半导体层的寿命。

公开(公告)号：US20110212596A1

公开(公告)日：2011-09-01

申请号：US13106158

申请日：2011-05-12

申请人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Akihisa SHIMOMURA ,  Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2007

摘要： An object of an embodiment of the present invention to be disclosed is to prevent oxygen from being taken in a single crystal semiconductor layer in laser irradiation even when crystallinity of the single crystal semiconductor layer is repaired by irradiation with a laser beam; and to make substantially equal or reduce an oxygen concentration in the semiconductor layer after the laser irradiation comparing before the laser irradiation. A single crystal semiconductor layer which is provided over a base substrate by bonding is irradiated with a laser beam, whereby the crystallinity of the single crystal semiconductor layer is repaired. The laser irradiation is performed under a reducing atmosphere or an inert atmosphere.

摘要翻译： 要公开的本发明的实施例的目的在于，即使通过用激光束照射来修复单晶半导体层的结晶度，也可以防止激光照射中的单晶半导体层中的氧被吸收; 并且在激光照射之前比较激光照射之后，使半导体层中的氧浓度基本相等或降低。 用激光束照射通过接合而设置在基底基板上的单晶半导体层，从而修复单晶半导体层的结晶性。 激光照射在还原气氛或惰性气氛下进行。

公开(公告)号：US20100151663A1

公开(公告)日：2010-06-17

申请号：US12634107

申请日：2009-12-09

申请人： Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

发明人： Hideto OHNUMA ,  Junpei MOMO ,  Shunpei YAMAZAKI

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： When the single crystal semiconductor layer is melted, the outward diffusion of oxygen is promoted. Specifically, an SOI substrate is formed in such a manner that an SOI structure having a bonding layer including oxygen provided over a base substrate and a single crystal semiconductor layer provided over the bonding layer including oxygen is formed, and part of the single crystal semiconductor layer is melted by irradiation with a laser beam in a state that the base substrate is heated at a temperature of higher than or equal to 500° C. and lower than a melting point of the base substrate.

摘要翻译： 当单晶半导体层熔化时，氧的向外扩散被促进。 具体地，形成SOI衬底，其中形成具有设置在基底衬底上的包含氧的结合层的SOI结构和设置在包括氧的接合层上的单晶半导体层，并且部分单晶半导体层 在基底基板在高于或等于500℃且低于基底的熔点的温度下被加热的状态下通过用激光束照射而熔化。

公开(公告)号：US20090115028A1

公开(公告)日：2009-05-07

申请号：US12246569

申请日：2008-10-07

申请人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Yoji NAGANO ,  Junpei MOMO

发明人： Akihisa SHIMOMURA ,  Fumito ISAKA ,  Yoji NAGANO ,  Junpei MOMO

IPC分类号： H01L21/762 ,  H01L29/06

CPC分类号： H01L27/1266 ,  H01L21/02532 ,  H01L21/02686 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1285 ,  H01L29/66772

摘要： A semiconductor substrate including a single crystal semiconductor layer with a buffer layer interposed therebetween is manufactured. A semiconductor substrate is doped with hydrogen to form a damaged layer containing a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the semiconductor substrate is heated so that the single crystal semiconductor substrate is separated along a separation plane. The single crystal semiconductor layer is irradiated with a laser beam from the single crystal semiconductor layer side to melt a region in the depth direction from the surface of the laser-irradiated region of the single crystal semiconductor layer. Recrystallization progresses based on the plane orientation of the single crystal semiconductor layer which is solid without being melted; therefore, crystallinity of the single crystal semiconductor layer is recovered and the surface of the single crystal semiconductor layer is planarized.

摘要翻译： 制造包括其间具有缓冲层的单晶半导体层的半导体衬底。 掺杂氢的半导体衬底形成含有大量氢的损伤层。 在单晶半导体衬底和支撑衬底接合之后，加热半导体衬底，使得单晶半导体衬底沿着分离平面分离。 用单晶半导体层侧的激光照射单晶半导体层，从单晶半导体层的激光照射区域的表面向深度方向熔融区域。 基于固体的单晶半导体层的平面取向而不熔化而进行重结晶; 因此，回收单晶半导体层的结晶度，使单晶半导体层的表面平坦化。

公开(公告)号：US20090111244A1

公开(公告)日：2009-04-30

申请号：US12246577

申请日：2008-10-07

申请人： Shunpei YAMAZAKI ,  Junpei MOMO ,  Fumito ISAKA ,  Eiji HIGA ,  Masaki KOYAMA ,  Akihisa SHIMOMURA

发明人： Shunpei YAMAZAKI ,  Junpei MOMO ,  Fumito ISAKA ,  Eiji HIGA ,  Masaki KOYAMA ,  Akihisa SHIMOMURA

IPC分类号： H01L21/762

CPC分类号： H01L27/1266 ,  B23K26/03 ,  B23K26/083 ,  B23K26/12 ,  B23K26/127 ,  B23K26/14 ,  H01L21/268 ,  H01L21/3247 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/66772

摘要： A single crystal semiconductor substrate is irradiated with ions that are generated by exciting a hydrogen gas and are accelerated with an ion doping apparatus, thereby forming a damaged region that contains a large amount of hydrogen. After the single crystal semiconductor substrate and a supporting substrate are bonded, the single crystal semiconductor substrate is heated to be separated along the damaged region. While a single crystal semiconductor layer separated from the single crystal semiconductor substrate is heated, this single crystal semiconductor layer is irradiated with a laser beam. The single crystal semiconductor layer undergoes re-single-crystallization by being melted through laser beam irradiation, thereby recovering its crystallinity and planarizing the surface of the single crystal semiconductor layer.

摘要翻译： 照射通过激发氢气产生的离子并用离子掺杂装置加速的单晶半导体衬底，从而形成含有大量氢的损伤区域。 在单晶半导体衬底和支撑衬底接合之后，单晶半导体衬底被加热以沿着损伤区域分离。 当与单晶半导体衬底分离的单晶半导体层被加热时，用激光束照射该单晶半导体层。 单晶半导体层通过激光束照射熔融而进行再单晶化，从而回收其结晶性并使单晶半导体层的表面平坦化。

公开(公告)号：US20130065120A1

公开(公告)日：2013-03-14

申请号：US13602350

申请日：2012-09-04

申请人： Takuya MIWA ,  Nobuhiro INOUE ,  Kuniharu NOMOTO ,  Junpei MOMO

发明人： Takuya MIWA ,  Nobuhiro INOUE ,  Kuniharu NOMOTO ,  Junpei MOMO

IPC分类号： H01M4/485 ,  H01M4/04 ,  H01M4/583 ,  B82Y30/00

CPC分类号： H01M4/366 ,  C01B25/306 ,  C01B25/45 ,  C01B32/23 ,  C01P2006/40 ,  C30B7/10 ,  C30B29/14 ,  H01M4/04 ,  H01M4/0404 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/1397 ,  H01M4/485 ,  H01M4/583 ,  H01M4/62 ,  H01M10/0525 ,  H01M2004/028 ,  Y02P70/54

摘要： Occlusion and release of lithium ion are likely to one-dimensionally occur in the b-axis direction of a crystal in a lithium-containing composite oxide having an olivine structure. Thus, a positive electrode in which the b-axes of lithium-containing composite oxide single crystals are oriented vertically to a surface of a positive electrode current collector is provided. The lithium-containing composite oxide particles are mixed with graphene oxide and then pressure is applied thereto, whereby the rectangular parallelepiped or substantially rectangular parallelepiped particles are likely to slip. In addition, in the case where the rectangular parallelepiped or substantially rectangular parallelepiped particles whose length in the b-axis direction is shorter than those in the a-axis direction and the c-axis direction are used, when pressure is applied in one direction, the b-axes can be oriented in the one direction.

摘要翻译： 具有橄榄石结构的含锂复合氧化物中的结晶的b轴方向的锂离子的闭塞和释放容易发生一维的变化。 因此，提供了含锂复合氧化物单晶的b轴与正极集电体的表面垂直取向的正极。 将含锂复合氧化物颗粒与氧化石墨烯混合，然后施加压力，由此长方体或大致长方体的颗粒容易滑动。 此外，在使用长度方向的长轴方向的长方体或长方形的长方体的长度比a轴方向和c轴方向短的情况下，在一个方向施加压力的情况下， b轴可以在一个方向上定向。