-
公开(公告)号：US20220155141A1
公开(公告)日：2022-05-19
申请号：US17437839
申请日：2020-04-13
摘要： An optical sensor includes a support layer, a thermoelectric conversion material portion disposed on the support layer and including a strip-shaped first material layer that converts thermal energy into electrical energy and a strip-shaped second material layer that is electrically conductive, and a light absorbing film disposed on the thermoelectric conversion material portion to form a temperature difference in a longitudinal direction of the first material layer. The first material layer includes a first region and a second region. The second material layer includes a third region and a fourth region connected to the second region. The optical sensor further includes a first electrode electrically connected to the first region, and a second electrode disposed apart from the first electrode and electrically connected to the third region. The first material layer has a width, perpendicular to the longitudinal direction, of 0.1 μm or more.
-
公开(公告)号：US20240125651A1
公开(公告)日：2024-04-18
申请号：US18378159
申请日：2023-10-10
发明人： Kyohei KAKUYAMA , Kotaro HIROSE , Masahiro ADACHI
IPC分类号： G01J5/12
CPC分类号： G01J5/12
摘要： An optical sensor includes a support layer, a thermoelectric-conversion material section disposed on the support layer and including strip-shaped p-type material layers configured to convert thermal energy into electric energy and strip-shaped n-type material lavers configured to convert thermal energy into electric energy, a heat sink, a light absorbing film, and an insulating film disposed between the thermoelectric-conversion material section and the light absorbing film. Each of the p-type material layers includes a first region overlapping the heat sink and a second region overlapping the light absorbing film. Each of the n-type material layers includes a third region overlapping the heat sink and a fourth region overlapping the light absorbing film. The p-type material layers and the n-type material layers are alternately disposed in series. The light absorbing film includes 60 mass % to 95 mass % of carbon and 5 mass % to 40 mass % of a resin.
-
3.发明公开公开(公告)号：US20240334832A1
公开(公告)日：2024-10-03
申请号：US18574080
申请日：2022-02-25
IPC分类号： H10N10/817 , H10N10/01 , H10N10/82 , H10N10/851
CPC分类号： H10N10/817 , H10N10/01 , H10N10/82 , H10N10/8556
摘要： A thermoelectric conversion element includes a first electrode, a thermoelectric conversion material portion configured to convert heat into electricity, an intermediate layer arranged on the thermoelectric conversion material portion, a conductive bonding material arranged in between the intermediate layer and the first electrode to bond the first electrode to the intermediate layer, and a second electrode connected to the thermoelectric conversion material portion. The intermediate layer includes a first layer arranged on the thermoelectric conversion material portion and containing a dopant, and a second layer arranged on the first layer and configured to suppress diffusion of elements. The intermediate layer has an interface resistivity of not less than 0.0001 mΩcm2 and not more than 0.5 mΩcm2.
-
公开(公告)号：US20210091289A1
公开(公告)日：2021-03-25
申请号：US16981586
申请日：2018-12-28
发明人： Masahiro ADACHI , Kotaro HIROSE , Makoto KIYAMA , Takashi MATSUURA , Yoshiyuki YAMAMOTO , Tsunehiro TAKEUCHI , Shunsuke NISHINO
摘要： A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.
-
公开(公告)号：US20240147860A1
公开(公告)日：2024-05-02
申请号：US18279599
申请日：2021-11-16
发明人： Kyohei KAKUYAMA , Kotaro HIROSE , Masahiro ADACHI
IPC分类号： H10N10/851 , G01J1/02
CPC分类号： H10N10/8556 , G01J1/0204
摘要： An optical sensor includes a support and a thermoelectric-conversion material section including first material layers, second material layers, and a third material layer. Each of the first material layers may have a first region including a first end portion and a second region including a second end portion. Each of the second material layers may have a third region including a third end portion and a fourth region including a fourth end portion. The first region and the second region are electrically connected to the third region and the fourth region, respectively, such that the plurality of first material layers and the plurality of second material layers are alternately connected in series to each other. The third material layer is disposed between the first region and the third region.
-
公开(公告)号：US20240130238A1
公开(公告)日：2024-04-18
申请号：US18377306
申请日：2023-10-06
发明人： Kyohei KAKUYAMA , Kotaro HIROSE , Masahiro ADACHI
IPC分类号： H10N10/851 , G01J5/12 , H10N10/13 , H10N10/817
CPC分类号： H10N10/8556 , G01J5/12 , H10N10/13 , H10N10/817
摘要： An optical sensor includes a support film having a first main surface and a second main surface located opposite to the first main surface in a thickness direction; a thermoelectric-conversion material section disposed on the first main surface and including a plurality of strip-shaped first material layers formed of SiGe having p-type conductivity and configured to convert thermal energy into electric energy, and a plurality of strip-shaped second material layers formed of SiGe having n-type conductivity and configured to convert thermal energy into electric energy; a heat sink disposed on the second main surface; and a light absorbing film disposed so as to form a temperature difference in each of the first material layers in longitudinal directions and each of the second material layers in longitudinal directions and configured to convert received light into thermal energy.
-
公开(公告)号：US20230255114A1
公开(公告)日：2023-08-10
申请号：US18070505
申请日：2022-11-29
发明人： Kyohei KAKUYAMA , Kotaro HIROSE , Masahiro ADACHI
CPC分类号： H01L35/32 , G01J5/14 , G01J2005/103
摘要： An optical sensor includes a support film, a thermoelectric conversion material portion, a heat sink, a light absorption film, a first electrode, and a second electrode. The thermoelectric conversion material portion includes a plurality of first material layers and a plurality of second material layers. The support film includes a first layer arranged on the heat sink side in a thickness direction and configured with a phononic structure having a large number of holes, and an insulating second layer arranged on the first layer and in contact with the thermoelectric conversion material portion.
-
公开(公告)号：US20220278263A1
公开(公告)日：2022-09-01
申请号：US17631495
申请日：2020-08-06
摘要： A thermoelectric conversion material is represented by a composition formula Ag2S(1-x)Sex, where x has a value of greater than 0.01 and smaller than 0.6.
-
公开(公告)号：US20210265550A1
公开(公告)日：2021-08-26
申请号：US16973194
申请日：2019-03-26
摘要： A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.
-
公开(公告)号：US20240206339A1
公开(公告)日：2024-06-20
申请号：US18287296
申请日：2022-02-04
发明人： Kotaro HIROSE , Masahiro ADACHI
IPC分类号： H10N10/817 , H10N10/17 , H10N10/851
CPC分类号： H10N10/817 , H10N10/17 , H10N10/8556
摘要： A thermoelectric conversion device includes a first electrode, a thermoelectric conversion material portion containing Si and Ge as constituent elements, a conductive joining member disposed in contact with the first electrode and the thermoelectric conversion material portion and joining the first electrode and the thermoelectric conversion material portion together, and a second electrode. The Si and the Ge contain amorphous phase and crystalline phase. The joining member contains at least one of Ag, Cu, Ti, and Sn or an alloy thereof as a major constituent. The thermoelectric conversion material portion includes a first layer containing the major constituent in an amount of 10 atm % or more and in contact with the joining member, and a second layer. The second layer has a degree of crystallinity of 40% by volume to 90% by volume.
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.015 秒)
