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公开(公告)号：US20240170917A1
公开(公告)日：2024-05-23
申请号：US18281791
申请日：2022-03-04
发明人： Naoki FUJIWARA , Naoya KONO , Akira FURUYA , Yuki ITO , Susumu NODA , Takuya INOUE , Kenji ISHIZAKI
CPC分类号： H01S5/11 , H01S5/04254 , H01S5/04256 , H01S5/06226 , H01S5/18 , H01S5/2086
摘要： A photonic crystal surface-emitting laser includes a light emitting region from which light is emitted in a direction crossing an in-plane direction, and a current blocking region that is adjacent to the light emitting region in the in-plane direction and in which current is less likely to flow than in the light emitting region. The light emitting region and the current blocking region each include a photonic crystal layer. The photonic crystal layer has a first region and second regions periodically arranged in the first region. A refractive index of each of the second regions is different from that of the first region. The light emitting region includes a first semiconductor layer, an active layer, and a second semiconductor layer. The first semiconductor layer, the active layer, and the second semiconductor layer are sequentially stacked on top of one another in an emission direction of the light.
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公开(公告)号：US20240047944A1
公开(公告)日：2024-02-08
申请号：US18266311
申请日：2021-10-29
发明人： Naoya KONO , Yuki ITO , Naoki FUJIWARA , Susumu NODA , Takuya INOUE , Menaka De ZOYSA , Kenji ISHIZAKI
CPC分类号： H01S5/11 , H01S5/185 , H01S5/04254 , H01S5/04253
摘要： A photonic-crystal surface emitting laser includes a first semiconductor layer, a photonic crystal layer having a refractive index higher than a refractive index of the first semiconductor layer and provided on the first semiconductor layer, and an active layer provided opposite to the first semiconductor layer with respect to the photonic crystal layer. The photonic crystal layer has a first region and a plurality of second regions each having a refractive index different from a refractive index of the first region and periodically disposed in the first region in a plane of the photonic crystal layer. The second regions extend from the photonic crystal layer to the first semiconductor layer.
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公开(公告)号：US20220236620A1
公开(公告)日：2022-07-28
申请号：US17572742
申请日：2022-01-11
发明人： Tsutomu ISHIKAWA , Naoya KONO
摘要： A method for manufacturing an optical modulator is disclosed. The optical modulator includes a Mach-Zehnder modulator, the Mach-Zehnder modulator including an electrode and an arm waveguide, the electrode being provided on the arm waveguide. The method includes a step of preparing the Mach-Zehnder modulator, a step of acquiring a relationship between a voltage applied to the electrode and a phase change amount of light propagating through the arm waveguide based on a light transmittance in the arm waveguide, a step of acquiring a voltage in which a range of a phase change amount of light in the Mach-Zehnder modulator has a predetermined range based on the relationship, and a step of storing the voltage in a storage unit.
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公开(公告)号：US20210116775A1
公开(公告)日：2021-04-22
申请号：US17033246
申请日：2020-09-25
发明人： Naoya KONO
摘要： An optical modulator includes an input waveguide having a first width enabling a propagation of a light-beam in a single-mode, a tapered waveguide having an input end connected to the input waveguide and an output end having a second width larger than the first width, an optical demultiplexer having an input port connected to the output end, a first output port connected to a first arm waveguide, and a second output port connected to a second arm waveguide connected to the second output port, a first electrode disposed on the first arm waveguide, and a second electrode disposed on the second arm waveguide. The first arm waveguide has a third width larger than the first width. The first arm waveguide is located within a first strip region. The first strip region having a fourth width twice as large as the third width.
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公开(公告)号：US20160054639A1
公开(公告)日：2016-02-25
申请号：US14828887
申请日：2015-08-18
发明人： Naoya KONO
CPC分类号： G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2001/212
摘要： A Mach-Zehnder modulator includes: a conductive semiconductor region disposed on a substrate; a first waveguide arm disposed on the conductive semiconductor region; a second waveguide arm disposed on the conductive semiconductor region; a first electrode disposed on the first waveguide arm, the first electrode receiving a first drive signal applied to the first waveguide arm; a second electrode disposed on the second waveguide arm, the second electrode receiving a second drive signal applied to the second waveguide arm; a first ground electrode disposed on the conductive semiconductor region, the first ground electrode being electrically connected to a reference potential; and a second ground electrode disposed on the conductive semiconductor region. The first and second drive signals constitute a differential signal. The second ground electrode is electrically connected to the first ground electrode via the conductive semiconductor region.
摘要翻译： 马赫 - 策德尔调制器包括：设置在基板上的导电半导体区域; 设置在所述导电半导体区域上的第一波导臂; 设置在所述导电半导体区域上的第二波导臂; 设置在所述第一波导臂上的第一电极，所述第一电极接收施加到所述第一波导臂的第一驱动信号; 设置在所述第二波导臂上的第二电极，所述第二电极接收施加到所述第二波导臂的第二驱动信号; 设置在所述导电半导体区域上的第一接地电极，所述第一接地电极与参考电位电连接; 以及设置在导电半导体区域上的第二接地电极。 第一和第二驱动信号构成差分信号。 第二接地电极经由导电半导体区域与第一接地电极电连接。
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公开(公告)号：US20150024527A1
公开(公告)日：2015-01-22
申请号：US14331762
申请日：2014-07-15
发明人： Hideki YAGI , Naoko KONISHI , Takamitsu KITAMURA , Naoya KONO
IPC分类号： G02F1/225
CPC分类号： G02F1/2257 , G02B6/1228 , G02F2001/212 , G02F2001/217
摘要： A method for producing a spot-size convertor includes the steps of preparing a substrate; forming a stacked semiconductor layer including first and second core layers on the substrate; forming a mesa structure by etching the stacked semiconductor layer using a first mask, the mesa structure including a side surface and a bottom portion of the first core layer; forming a protective mask covering the side surface; etching the bottom portion using the protective mask to form a top mesa; and forming a bottom mesa by etching the second core layer using a second mask. The top mesa includes the first core layer and a portion having a mesa width gradually reduced in a first direction of a waveguide axis. The bottom mesa includes the second core layer and a portion having a mesa width gradually reduced in a second direction opposite to the first direction.
摘要翻译： 一种点尺寸转换器的制造方法包括准备基板的工序; 在所述基板上形成包括第一和第二芯层的层叠半导体层; 通过使用第一掩模蚀刻所述堆叠半导体层来形成台面结构，所述台面结构包括所述第一芯层的侧表面和底部; 形成覆盖所述侧面的保护罩; 使用防护罩蚀刻底部以形成顶部台面; 以及通过使用第二掩模蚀刻所述第二芯层来形成底台面。 顶部台面包括第一芯层和沿波导轴的第一方向逐渐减小的台面宽度的部分。 底部台面包括第二芯层和在与第一方向相反的第二方向上逐渐减小的台面宽度的部分。
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公开(公告)号：US20220131344A1
公开(公告)日：2022-04-28
申请号：US17501226
申请日：2021-10-14
发明人： Naoki FUJIWARA , Akira FURUYA , Naoya KONO
摘要： A semiconductor optical device in which a light emitting region that emits light and a reflecting region that reflects the light to the light emitting region side are integrated includes a core layer that is provided in the light emitting region, and a waveguide layer that is provided in the reflecting region, that is optically coupled to the core layer, and that has a band gap that is larger than energy of the light. The reflecting region has a first thyristor that overlaps the waveguide layer in a direction that intersects a propagation direction of the light.
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公开(公告)号：US20200341345A1
公开(公告)日：2020-10-29
申请号：US16852927
申请日：2020-04-20
发明人： Naoya KONO
摘要： A Mach-Zehnder modulator includes a first arm waveguide; a second arm waveguide; a conductive region for connecting the first arm waveguide and the second arm waveguide to each other; a differential transmission path including a first metal body and a second metal body connected to the first arm waveguide and the second arm waveguide, respectively, and a third metal body for a reference potential; and a capacitor connected between the conductive region and the third metal body.
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公开(公告)号：US20190094649A1
公开(公告)日：2019-03-28
申请号：US16135503
申请日：2018-09-19
发明人： Naoya KONO , Jun OTSUKA
摘要： A Mach-Zehnder modulator includes: a first arm waveguide having first to third waveguide portions, the third waveguide portion being curved to couple the first and second waveguide portions with each other; a second arm waveguide having first to third waveguide portions, the third waveguide portion being curved to couple the first and second waveguide portions with each other, and a differential signal conductor having first and second signal conductors for driving the first and second arm waveguides, respectively. The first signal conductor has a first conductor portion and a first intersecting conductor portion connected thereto. The second signal conductor has a first conductor portion and a second intersecting conductor portion connected thereto. One of the first and second intersecting conductor portions includes an upper conducting layer, and the other includes a lower conducting layer. The upper conducting layer extends on the lower conducting layer apart therefrom.
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10.发明申请公开(公告)号：US20140254998A1
公开(公告)日：2014-09-11
申请号：US14198261
申请日：2014-03-05
发明人： Akira FURUYA , Takamitsu KITAMURA , Hideki YAGI , Naoya KONO
CPC分类号： G02B6/305 , G02B6/1228 , G02B6/136 , G02B2006/12078 , G02F1/01708 , G02F1/2257 , G02F2001/212 , G02F2001/217 , G02F2201/04 , G02F2201/06 , G02F2201/063 , G02F2201/12 , G02F2202/101 , G02F2202/102 , G02F2202/108
摘要： A semiconductor optical waveguide device includes a substrate having a first area and a second area, and first, second, and semiconductor mesas on the substrate. The first semiconductor mesa includes a cladding layer and a first mesa portion on the second area, the first mesa portion including first and second portions. The second semiconductor mesa includes an intermediate layer, a first core layer, and first and second mesa portions on the first and second area, respectively. The third semiconductor mesa includes a second core layer, and first and second mesa portions having a greater width than that of the second semiconductor mesa. The first portion of the first semiconductor mesa has a substantially the same width as the second mesa portion of the second semiconductor mesa. The first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first and second core layers.
摘要翻译： 半导体光波导器件包括具有第一区域和第二区域的衬底以及衬底上的第一，第二和第二半导体台面。 第一半导体台面包括在第二区域上的包覆层和第一台面部分，第一台面部分包括第一和第二部分。 第二半导体台面分别包括中间层，第一芯层以及第一和第二区域上的第一和第二台面部分。 第三半导体台面包括第二芯层，第一和第二台面部分的宽度大于第二半导体台面的宽度。 第一半导体台面的第一部分具有与第二半导体台面的第二台面部分基本相同的宽度。 第一芯层通过设置在第一和第二芯层之间的中间层光耦合到第二芯层。
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