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    Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device
    1.
    发明授权
    Group III nitride semiconductor device, and method for fabricating group III nitride semiconductor device 有权
    III族氮化物半导体器件及其制造方法

    公开(公告)号：US09425348B2

    公开(公告)日：2016-08-23

    申请号：US14521124

    申请日：2014-10-22

    申请人： Sumitomo Electric Industries, Ltd. ,  SONY CORPORATION

    发明人： Nobuhiro Saga ,  Shinji Tokuyama ,  Kazuhide Sumiyoshi ,  Takashi Kyono ,  Koji Katayama ,  Tatsushi Hamaguchi ,  Katsunori Yanashima

    IPC分类号： H01L33/00 ,  H01L33/32 ,  H01L33/16

    CPC分类号： H01L33/0095 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325

    摘要： In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.

    摘要翻译： 在根据本发明的一个方面的III族氮化物半导体器件中，在形成在半极性平面衬底上的p型III族氮化物半导体区域中，p型III族中所含的氢（H）浓度 氮化物半导体区域的p型掺杂剂的浓度为25％以下，p型III族氮化物半导体区域中所含的氧浓度为5×10 17原子/ cm 3以下， 半极性平面基板的主表面的法线轴和半极性平面基板的c轴不小于45度且不高于80度或不低于100度并且不高于135度 III族氮化物半导体器件的波导轴方向。

    Group-III nitride semiconductor laser device
    2.
    发明授权
    Group-III nitride semiconductor laser device 有权
    III族氮化物半导体激光器件

    公开(公告)号：US08908732B2

    公开(公告)日：2014-12-09

    申请号：US13896918

    申请日：2013-05-17

    申请人： Sumitomo Electric Industries, Ltd. ,  Sony Corporation

    发明人： Masaki Ueno ,  Koji Katayama ,  Takatoshi Ikegami ,  Takao Nakamura ,  Katsunori Yanashima ,  Hiroshi Nakajima

    IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/22 ,  H01S5/30 ,  H01S5/343 ,  H01S5/32 ,  H01S5/20 ,  H01S5/02

    CPC分类号： H01S5/3013 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0287 ,  H01S5/2031 ,  H01S5/22 ,  H01S5/3063 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34333

    摘要： A group-III nitride semiconductor laser device comprises: a laser structure including a semiconductor region and a support base having a semipolar primary surface of group-III nitride semiconductor; a first reflective layer, provided on a first facet of the region, for a lasing cavity of the laser device; and a second reflective layer, provided on a second facet of the region, for the lasing cavity. The laser structure includes a laser waveguide extending along the semipolar surface. A c+ axis vector indicating a axial direction of the base tilts toward an m-axis of the group-III nitride semiconductor at an angle of not less than 63 degrees and less than 80 degrees with respect to a vector indicating a direction of an axis normal to the semipolar surface. The first reflective layer has a reflectance of less than 60% in a wavelength range of 525 to 545 nm.

    摘要翻译： III族氮化物半导体激光器件包括：激光器结构，包括半导体区域和具有III族氮化物半导体的半极性主表面的支撑基底; 第一反射层，设置在该区域的第一面上，用于激光装置的激光腔; 以及设置在该区域的第二面上的用于激光腔的第二反射层。 激光器结构包括沿着半极性表面延伸的激光波导。 指示基座的<0001>轴向的c +轴向量相对于指示方向的矢量以不小于63度且小于80度的角度向III族氮化物半导体的m轴倾斜 垂直于半极性表面的轴。 第一反射层在525至545nm的波长范围内具有小于60％的反射率。

    GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE
    3.
    发明申请
    GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权
    III族氮化物半导体器件，以及制造III族氮化物半导体器件的方法

    公开(公告)号：US20150115312A1

    公开(公告)日：2015-04-30

    申请号：US14521124

    申请日：2014-10-22

    申请人： Sumitomo Electric Industries, Ltd. ,  SONY CORPORATION

    发明人： Nobuhiro Saga ,  Shinji Tokuyama ,  Kazuhide Sumiyoshi ,  Takashi Kyono ,  Koji Katayama ,  Tatsushi Hamaguchi ,  Katsunori Yanashima

    IPC分类号： H01L33/00 ,  H01L33/32

    CPC分类号： H01L33/0095 ,  H01L33/0075 ,  H01L33/16 ,  H01L33/32 ,  H01L33/325

    摘要： In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.

    摘要翻译： 在根据本发明的一个方面的III族氮化物半导体器件中，在形成在半极性平面衬底上的p型III族氮化物半导体区域中，p型III族中所含的氢（H）浓度 氮化物半导体区域的p型掺杂剂的浓度为25％以下，p型III族氮化物半导体区域中所含的氧浓度为5×10 17原子/ cm 3以下， 半极性平面基板的主表面的法线轴和半极性平面基板的c轴不小于45度且不高于80度或不低于100度并且不高于135度 III族氮化物半导体器件的波导轴方向。