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1.发明授权公开(公告)号：US09425348B2
公开(公告)日：2016-08-23
申请号：US14521124
申请日：2014-10-22
发明人： Nobuhiro Saga , Shinji Tokuyama , Kazuhide Sumiyoshi , Takashi Kyono , Koji Katayama , Tatsushi Hamaguchi , Katsunori Yanashima
CPC分类号： H01L33/0095 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/325
摘要： In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.
摘要翻译： 在根据本发明的一个方面的III族氮化物半导体器件中，在形成在半极性平面衬底上的p型III族氮化物半导体区域中，p型III族中所含的氢（H）浓度 氮化物半导体区域的p型掺杂剂的浓度为25％以下，p型III族氮化物半导体区域中所含的氧浓度为5×10 17原子/ cm 3以下， 半极性平面基板的主表面的法线轴和半极性平面基板的c轴不小于45度且不高于80度或不低于100度并且不高于135度 III族氮化物半导体器件的波导轴方向。
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2.发明授权Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device 有权III族氮化物半导体器件，p型接触结构以及III族氮化物半导体器件的制造方法公开(公告)号：US09379523B2
公开(公告)日：2016-06-28
申请号：US14643059
申请日：2015-03-10
发明人： Yohei Enya , Takashi Kyono , Masaki Ueno , Takao Nakamura , Takashi Matsuura , Tatsushi Hamaguchi , Yuji Furushima
IPC分类号： H01S5/343 , H01L21/66 , H01L33/00 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/36 , H01L29/20 , H01L29/205 , H01L29/66 , H01L29/737 , H01L21/02 , H01S5/042 , H01S5/32 , H01S5/30
CPC分类号： H01S5/34333 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L22/14 , H01L22/20 , H01L29/2003 , H01L29/205 , H01L29/66242 , H01L29/737 , H01L33/0025 , H01L33/0045 , H01L33/0075 , H01L33/06 , H01L33/12 , H01L33/32 , H01L33/36 , H01L2933/0016 , H01S5/0421 , H01S5/0425 , H01S5/3063 , H01S5/3202
摘要： A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.
摘要翻译： III族氮化物半导体器件包括：具有主表面的III族氮化物半导体层，相对于III族氮化物半导体的c面在50度以上且80度以下的范围内倾斜， 的III族氮化物半导体; 包括第一至第三p型III族氮化物半导体层的p型III族氮化物半导体层叠体，在III族氮化物半导体层的主表面上设置第一至第三p型III族氮化物半导体层， 以及夹持所述第二p型III族氮化物半导体层的第三p型III族氮化物半导体层，使得所述第二p型III族氮化物半导体层包含应变; 以及设置在p型III族氮化物半导体层叠体上的电极。 电极与第一p型III族氮化物半导体层接触。
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3.发明申请METHOD OF MANUFACTURING SEMICONDUCTOR LASER DEVICE AND SEMICONDUCTOR LASER DEVICE 审中-公开制造半导体激光器件和半导体激光器件的方法公开(公告)号：US20130148681A1
公开(公告)日：2013-06-13
申请号：US13691097
申请日：2012-11-30
发明人： Tatsushi Hamaguchi , Shimpei Takagi
CPC分类号： H01S5/3013 , H01L33/0062 , H01S5/0202 , H01S5/22 , H01S5/3202 , H01S5/32341 , H01S2304/04
摘要： There is provided a method of manufacturing a semiconductor laser device. The method includes: preparing a production substrate on a hexagonal-system group III nitride semiconductor substrate having a semi-polar plane, the production substrate having an epitaxial layer that includes a luminous layer of a semiconductor laser device; forming a cutting guide groove in a partial region on a surface of the production substrate, the partial region being on a scribe line on a resonator-end-face side of the semiconductor laser device and including one or more corners of the semiconductor laser device, and the cutting guide groove being formed in an extending direction along the scribe line and being V-shaped in cross section when viewed from the extending direction; and cutting, along the scribe line, the production substrate in which the cutting guide groove is formed.
摘要翻译： 提供一种制造半导体激光器件的方法。 该方法包括：在具有半极性平面的六方晶系III族氮化物半导体衬底上制备生产衬底，该制造衬底具有包括半导体激光器件的发光层的外延层; 在所述制造基板的表面的部分区域中形成切割引导槽，所述部分区域位于所述半导体激光装置的谐振器端面侧的划线上，并且包括所述半导体激光装置的一个以上的角部， 并且所述切割引导槽沿着所述划线沿延伸方向形成，并且在从所述延伸方向观察时呈横截面为V形; 沿切割线切割形成有切割引导槽的生产基板。
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4.发明申请GROUP III NITRIDE SEMICONDUCTOR DEVICE, AND METHOD FOR FABRICATING GROUP III NITRIDE SEMICONDUCTOR DEVICE 有权III族氮化物半导体器件，以及制造III族氮化物半导体器件的方法公开(公告)号：US20150115312A1
公开(公告)日：2015-04-30
申请号：US14521124
申请日：2014-10-22
发明人： Nobuhiro Saga , Shinji Tokuyama , Kazuhide Sumiyoshi , Takashi Kyono , Koji Katayama , Tatsushi Hamaguchi , Katsunori Yanashima
CPC分类号： H01L33/0095 , H01L33/0075 , H01L33/16 , H01L33/32 , H01L33/325
摘要： In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×1017 atoms/cm3 or lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.
摘要翻译： 在根据本发明的一个方面的III族氮化物半导体器件中，在形成在半极性平面衬底上的p型III族氮化物半导体区域中，p型III族中所含的氢（H）浓度 氮化物半导体区域的p型掺杂剂的浓度为25％以下，p型III族氮化物半导体区域中所含的氧浓度为5×10 17原子/ cm 3以下， 半极性平面基板的主表面的法线轴和半极性平面基板的c轴不小于45度且不高于80度或不低于100度并且不高于135度 III族氮化物半导体器件的波导轴方向。
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公开(公告)号：US20130182734A1
公开(公告)日：2013-07-18
申请号：US13735746
申请日：2013-01-07
发明人： Tatsushi Hamaguchi , Shimpei Takagi
IPC分类号： H01S5/30
CPC分类号： H01S5/3013 , B82Y20/00 , H01S5/0035 , H01S5/0202 , H01S5/028 , H01S5/2009 , H01S5/2201 , H01S5/3202 , H01S5/34333
摘要： A laser diode includes: a semiconductor base made of a hexagonal Group III nitride semiconductor and having a semi-polar plane oriented along a {2, 0, −2, 1} direction; an epitaxial layer including a light-emitting layer forming an optical waveguide of laser light, and formed on the semi-polar plane of the semiconductor base, the epitaxial layer allowing a propagation direction of the laser light to be tilted, in an optical waveguide plane, at an angle ranging from about 8° to about 12° or about 18° to about 29° both inclusive with respect to a direction of projection of a c axis onto the optical waveguide plane, the optical waveguide plane including the propagation direction of the laser light and being parallel to the semi-polar plane; two resonator facets; a first electrode; and a second electrode.
摘要翻译： 激光二极管包括：由六方晶III族氮化物半导体制成并具有沿{2,0，-2,1}方向取向的半极性面的半导体基底; 外延层，其包括形成激光的光波导的发光层，形成在所述半导体基板的半极性面上，所述外延层允许激光的传播方向倾斜的光波导面 相对于光轴在光波导面上的投射方向为约8°至约12°或约18°至约29°的角度，包括激光传播方向的光波导面 光并平行于半极平面; 两个谐振器面; 第一电极; 和第二电极。
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公开(公告)号：US12126137B2
公开(公告)日：2024-10-22
申请号：US17975219
申请日：2022-10-27
申请人： Sony Corporation
发明人： Susumu Sato , Tatsushi Hamaguchi , Shoichiro Izumi , Noriyuki Futagawa , Masamichi Ito , Jugo Mitomo , Hiroshi Nakajima
CPC分类号： H01S5/18388 , H01S5/183 , H01S5/18327 , H01S5/18361 , H01S5/18369 , H01S5/18375 , H01S5/18377 , H01S5/34333 , H01S5/0425 , H01S5/04253 , H01S2304/02 , H01S2304/04
摘要： A light-emitting element includes: a laminated structure body 20 which is formed from a GaN-based compound semiconductor and in which a first compound semiconductor layer 21 including a first surface 21a and a second surface 21b that is opposed to the first surface 21a, an active layer 23 that faces the second surface 21b of the first compound semiconductor layer 21, and a second compound semiconductor layer 22 including a first surface 22a that faces the active layer 23 and a second surface 22b that is opposed to the first surface 22a are laminated; a first light reflection layer 41 that is provided on the first surface 21a side of the first compound semiconductor layer 21; and a second light reflection layer 42 that is provided on the second surface 22b side of the second compound semiconductor layer 22. The first light reflection layer 41 includes a concave mirror portion 43, and the second light reflection layer 42 has a flat shape.
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公开(公告)号：US11728625B2
公开(公告)日：2023-08-15
申请号：US16956376
申请日：2018-12-11
申请人： Sony Corporation
发明人： Tatsushi Hamaguchi , Jugo Mitomo , Rintaro Koda
CPC分类号： H01S5/34333 , H01S5/0206 , H01S5/0207 , H01S5/0208 , H01S5/04257 , H01S5/18361
摘要： A light emitting element of the present disclosure includes a compound semiconductor substrate 11, a stacked structure 20 including a GaN-based compound semiconductor, a first light reflection layer 41, and a second light reflection layer 42. The stacked structure 20 includes, in a stacked state a first compound semiconductor layer 21, an active layer 23, and a second compound semiconductor layer 22. The first light reflection layer 41 is disposed on the compound semiconductor substrate 11 and has a concave mirror section 43. The second light reflection layer 42 is disposed on a second surface side of the second compound semiconductor layer 22 and has a flat shape. The compound semiconductor substrate 11 includes a low impurity concentration compound semiconductor substrate or a semi-insulating compound semiconductor substrate.
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公开(公告)号：US10199799B2
公开(公告)日：2019-02-05
申请号：US15860211
申请日：2018-01-02
申请人： Sony Corporation
IPC分类号： H01S5/183 , H01S5/10 , H01S5/40 , H01S5/42 , G02B27/48 , H01S5/323 , H01S5/02 , H01S5/042 , H01S5/32 , H01S5/343 , H04N9/31
摘要： A light emitting element includes at least a first light reflecting layer formed on a surface of a substrate, a laminated structural body made of a first compound semiconductor layer, an active layer and a second compound semiconductor layer formed on the first light reflecting layer, and a second electrode and a second light reflecting layer formed on the second compound semiconductor layer, the laminated structural body is configured from a plurality of laminated structural body units, a light emitting element unit is configured from each of the laminated structural body units, and a resonator length in the light emitting element unit is different in every light emitting element unit.
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公开(公告)号：US09893492B2
公开(公告)日：2018-02-13
申请号：US15194933
申请日：2016-06-28
申请人： Sony Corporation
CPC分类号： H01S5/3013 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/183 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/18388 , H01S5/18391 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.
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公开(公告)号：US20160308332A1
公开(公告)日：2016-10-20
申请号：US15194933
申请日：2016-06-28
申请人： Sony Corporation
CPC分类号： H01S5/3013 , H01S5/0215 , H01S5/0216 , H01S5/0217 , H01S5/183 , H01S5/18311 , H01S5/18341 , H01S5/18361 , H01S5/18369 , H01S5/18388 , H01S5/18391 , H01S5/34333 , H01S2304/12
摘要： A method of manufacturing a light emitting element includes, sequentially (a) forming a first light reflecting layer having a convex shape; (b) forming a layered structure body by layering a first compound semiconductor layer, an active layer, and a second compound semiconductor layer; (c) forming, on the second surface of the second compound semiconductor layer, a second electrode and a second light reflecting layer formed from a multilayer film; (d) fixing the second light reflecting layer to a support substrate; (e) removing the substrate for manufacturing a light emitting element, and exposing the first surface of the first compound semiconductor layer and the first light reflecting layer; (f) etching the first surface of the first compound semiconductor layer; and (g) forming a first electrode on at least the etched first surface of the first compound semiconductor layer.
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