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公开(公告)号：US11959156B2
公开(公告)日：2024-04-16
申请号：US17910801
申请日：2021-07-30
发明人： Yuichiro Watanabe , Katsumi Okamura , Akito Ishii , Yoshiki Asakawa , Akihiko Ueda , Satoru Kukino , Hisaya Hama
CPC分类号： C22C29/16 , B22F7/008 , B23B27/148 , B22F2207/01 , B22F2301/205 , B22F2302/205 , B23B2226/125
摘要： A cubic boron nitride sintered material comprises cubic boron nitride particles and a bonding material, wherein the bonding material comprises at least one first metallic element selected from the group consisting of titanium, zirconium, vanadium, niobium, hafnium, tantalum, chromium, rhenium, molybdenum, and tungsten; cobalt; and aluminum; the cubic boron nitride sintered material has a first interface region sandwiched between an interface between the cubic boron nitride particles and the bonding material, and a first virtual line passing through a point 10 nm apart from the interface to the bonding material side; and when an element that is present at the highest concentration among the first metallic elements in the first interface region is defined as a first element, an atomic concentration of the first element in the first interface region is higher than an atomic concentration of the first element in the bonding material excluding the first interface region.
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公开(公告)号：US10774442B2
公开(公告)日：2020-09-15
申请号：US16359638
申请日：2019-03-20
摘要： In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
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3.发明申请公开(公告)号：US20170130362A1
公开(公告)日：2017-05-11
申请号：US15318742
申请日：2015-07-14
CPC分类号： C30B29/04 , C01B32/25 , C30B25/186 , C30B25/20
摘要： Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.
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公开(公告)号：US11007558B2
公开(公告)日：2021-05-18
申请号：US15745849
申请日：2016-07-22
发明人： Makoto Yukawa , Bunya Suemitsu , Takuya Kinoshita , Shigetoshi Sumimoto , Yutaka Kobayashi , Akihiko Ueda , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya
摘要： A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.
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公开(公告)号：US10737943B2
公开(公告)日：2020-08-11
申请号：US16071564
申请日：2017-01-18
发明人： Takuya Nohara , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya , Yutaka Kobayashi , Akihiko Ueda
IPC分类号： C01B32/26 , C23C16/01 , C30B25/08 , C30B25/20 , C30B29/04 , H01L21/205 , A44C27/00 , C30B25/12 , C23C16/02 , C23C16/27 , C23C16/458 , C30B25/18
摘要： Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
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公开(公告)号：US10316430B2
公开(公告)日：2019-06-11
申请号：US15318742
申请日：2015-07-14
摘要： Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.
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7.发明申请公开(公告)号：US20190031515A1
公开(公告)日：2019-01-31
申请号：US16071564
申请日：2017-01-18
发明人： Takuya Nohara , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya , Yutaka Kobayashi , Akihiko Ueda
IPC分类号： C01B32/26 , C30B29/04 , C30B25/08 , C30B25/20 , C23C16/01 , C23C16/27 , C30B25/18 , C23C16/458
摘要： Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
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8.发明申请公开(公告)号：US20180236515A1
公开(公告)日：2018-08-23
申请号：US15753241
申请日：2016-10-14
摘要： A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.
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公开(公告)号：US09957640B2
公开(公告)日：2018-05-01
申请号：US14413175
申请日：2014-04-16
发明人： Yoshiki Nishibayashi , Akihiko Ueda , Hitoshi Sumiya , Yutaka Kobayashi , Yuichiro Seki , Toshiya Takahashi
CPC分类号： C30B29/04 , C01B32/25 , C30B25/186 , C30B25/20
摘要： A single crystal diamond has a surface. In the single crystal diamond, a measurement region is defined in the surface, the measurement region includes a portion exhibiting a transmittance that is highest in the single crystal diamond and a portion exhibiting a transmittance that is lowest in the single crystal diamond, the measurement region has a plurality of square regions that are continuously arranged and each have a side having a length of 0.2 mm, and an average value of transmittances in each of the plurality of square regions is measured, wherein assuming that the average value of the transmittances in one square region is defined as T1 and the average value of the transmittances in another square region adjacent to the one square region is defined as T2, a relation of ((T1−T2)/((T1+T2)/2)×100)/0.2≤20 (%/mm) is satisfied throughout the measurement region.
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公开(公告)号：US20170241042A1
公开(公告)日：2017-08-24
申请号：US15519757
申请日：2016-07-22
CPC分类号： C30B29/04 , B21C3/025 , C23C16/27 , C23C16/274 , C30B9/00 , C30B25/105 , C30B25/186 , C30B25/20
摘要： In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
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