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公开(公告)号：US10287708B2
公开(公告)日：2019-05-14
申请号：US15519757
申请日：2016-07-22
摘要： In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
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公开(公告)号：US20180207697A1
公开(公告)日：2018-07-26
申请号：US15745849
申请日：2016-07-22
发明人： Makoto Yukawa , Bunya Suemitsu , Takuya Kinoshita , Shigetoshi Sumimoto , Yutaka Kobayashi , Akihiko Ueda , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya
摘要： A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.
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公开(公告)号：US10569317B2
公开(公告)日：2020-02-25
申请号：US15753241
申请日：2016-10-14
摘要： A single-crystal diamond includes a pair of main surfaces facing each other, an impurity concentration being changed along a first direction in each of the main surfaces.
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公开(公告)号：US20190218685A1
公开(公告)日：2019-07-18
申请号：US16359638
申请日：2019-03-20
CPC分类号： C30B29/04 , B21C3/025 , C23C16/27 , C23C16/274 , C30B9/00 , C30B25/105 , C30B25/186 , C30B25/20
摘要： In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
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公开(公告)号：US11007558B2
公开(公告)日：2021-05-18
申请号：US15745849
申请日：2016-07-22
发明人： Makoto Yukawa , Bunya Suemitsu , Takuya Kinoshita , Shigetoshi Sumimoto , Yutaka Kobayashi , Akihiko Ueda , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya
摘要： A diamond die includes a diamond provided with a hole for drawing a wire material, the diamond being a CVD single-crystal diamond, an axis of the hole being inclined relative to a normal direction of a crystal plane of the diamond.
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公开(公告)号：US10737943B2
公开(公告)日：2020-08-11
申请号：US16071564
申请日：2017-01-18
发明人： Takuya Nohara , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya , Yutaka Kobayashi , Akihiko Ueda
IPC分类号： C01B32/26 , C23C16/01 , C30B25/08 , C30B25/20 , C30B29/04 , H01L21/205 , A44C27/00 , C30B25/12 , C23C16/02 , C23C16/27 , C23C16/458 , C30B25/18
摘要： Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
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公开(公告)号：US10316430B2
公开(公告)日：2019-06-11
申请号：US15318742
申请日：2015-07-14
摘要： Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.
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公开(公告)号：US10774442B2
公开(公告)日：2020-09-15
申请号：US16359638
申请日：2019-03-20
摘要： In a single-crystal diamond material, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond material has a crystal growth main surface having an off angle of not more than 20°. A perforated tool includes a single-crystal diamond die, wherein in the single-crystal diamond die, a concentration of non-substitutional nitrogen atoms is not more than 200 ppm, a concentration of substitutional nitrogen atoms is lower than the concentration of the non-substitutional nitrogen atoms, and the single-crystal diamond die has a low-index plane represented by a Miller index of not less than −5 and not more than 5 in an integer, a perpendicular line of the low-index plane having an off angle of not more than 20° relative to an orientation of a hole for wire drawing.
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9.发明申请公开(公告)号：US20170130362A1
公开(公告)日：2017-05-11
申请号：US15318742
申请日：2015-07-14
CPC分类号： C30B29/04 , C01B32/25 , C30B25/186 , C30B25/20
摘要： Single crystal diamond of which hardness and chipping resistance have been improved in a balanced manner, a method for manufacturing the single crystal diamond, and a tool containing the diamond are provided. Single crystal diamond contains nitrogen atoms, and a ratio of the number of isolated substitutional nitrogen atoms in the single crystal diamond to the total number of nitrogen atoms in the single crystal diamond is not lower than 0.02% and lower than 40%.
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10.发明申请公开(公告)号：US20190031515A1
公开(公告)日：2019-01-31
申请号：US16071564
申请日：2017-01-18
发明人： Takuya Nohara , Natsuo Tatsumi , Yoshiki Nishibayashi , Hitoshi Sumiya , Yutaka Kobayashi , Akihiko Ueda
IPC分类号： C01B32/26 , C30B29/04 , C30B25/08 , C30B25/20 , C23C16/01 , C23C16/27 , C30B25/18 , C23C16/458
摘要： Provided is a method for manufacturing a single-crystal diamond, the method including the steps of: forming a protective film on at least a part of a surface of an auxiliary plate; preparing a diamond seed crystal substrate; disposing an auxiliary plate with a protective film that has the protective film formed on the auxiliary plate, and a diamond seed crystal substrate in a chamber; and growing a single-crystal diamond on a principal surface of the diamond seed crystal substrate by a chemical vapor deposition method while introducing a carbon-containing gas into the chamber.
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