公开(公告)号：US20130264632A1

公开(公告)日：2013-10-10

申请号：US13812070

申请日：2012-04-24

Applicant: Shijin Ding ,  Sun Chen ,  Xingmei Cui ,  Pengfei Wang ,  Wei Zhang

Inventor： Shijin Ding ,  Sun Chen ,  Xingmei Cui ,  Pengfei Wang ,  Wei Zhang

IPC: H01L29/792 ,  H01L29/66

CPC classification number: H01L29/792 ,  H01L29/66742 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881

Abstract: The invention relates to a thin film transistor memory and its fabricating method, This memory using the substrate as the gate electrode from bottom to up includes a charge blocking layer, a charge storage layer, a charge tunneling layer, an active region of the device and source/drain electrodes. The charge blocking layer is the ALD grown Al2O3 film. The charge storage layer is the two layer metal nanocrystals which include the first layer metal nanocrystals, the insulting layer and the second layer metal nanocrystals grown by ALD method. in sequence from bottom to up. The charge tunneling layer is the symmetrical stack layer which includes the SiO2/HfO2/SiO2 or Al2O3/HfO2/Al2O3 film grown. by ALD method in sequence from bottom to up. The active region of the device is the IGZO film grown by the RF sputtering method, and it is formed by the standard lithography and wet etch method. The TFT memory in this invention has the advantage with large P/E window, good data retention, high P/E speed, stable threshold voltage and simple fabricating process.

Abstract translation: 本发明涉及薄膜晶体管存储器及其制造方法，从底部到顶部使用基板作为栅电极的存储器包括电荷阻挡层，电荷存储层，电荷隧道层，器件的有源区和 源/漏电极。 电荷阻挡层是ALD生长的Al 2 O 3膜。 电荷存储层是由ALD法生长的第一层金属纳米晶体，绝缘层和第二层金属纳米晶体的两层金属纳米晶体。 从下到上。 电荷隧道层是包括生长的SiO 2 / HfO 2 / SiO 2或Al 2 O 3 / HfO 2 / Al 2 O 3膜的对称堆叠层。 通过ALD方法从下到上依次。 器件的有源区是通过RF溅射法生长的IGZO膜，并且通过标准光刻和湿蚀刻法形成。 本发明的TFT存储器具有P / E窗口大，数据保持性好，P / E速度高，阈值电压稳定，制造工艺简单的优点。

公开(公告)号：US20070272339A1

公开(公告)日：2007-11-29

申请号：US11891399

申请日：2007-08-10

Applicant: Howard Colvin ,  Sun Chen

Inventor： Howard Colvin ,  Sun Chen

IPC: B60C9/12 ,  C08K3/36

CPC classification number: B60C1/0016 ,  C08K3/36 ,  Y02T10/862 ,  Y10T152/10513 ,  C08L21/00

Abstract: This invention is based upon the discovery that elongated silica has superior characteristics for reinforcing rubbery elastomers as compared to conventional silica. More specifically, elongated silica provides a higher level of reinforcement for elastomers at the same level of loading. Accordingly, elongated silica can be employed to attain an equivalent level of reinforcement at a lower level of loading. This results in lower weight compositions and potential cost savings. Rubber compounds that are reinforced with elongated silica offer significant advantages in tires including reduced rolling resistance, increased tread life, and, of course, reduced weight. The subject invention more specifically relates to a tire having a tread wherein said tread is comprised of a silica reinforced rubber composition, wherein the silica reinforced rubber composition is comprised of (1) a rubbery polymer and (2) an elongated silica, wherein the elongated silica has a width that is within the range of about 5 nm to about 40 nm, and wherein the elongated silica has a length of about 40 nm to about 300 nm. The present invention also discloses a process for preparing a silica reinforced rubber composition which comprises (1) adding an elongated silica to a latex of a rubbery polymer, and (2) recovering the silica reinforced rubber composition from the latex.

Abstract translation: 本发明基于以下发现：与常规二氧化硅相比，细长二氧化硅具有用于增强橡胶弹性体的优异特性。 更具体地说，细长二氧化硅在相同的加载水平下为弹性体提供了更高水平的增强。 因此，可以使用细长的二氧化硅以在较低的负载水平下获得相当的钢筋水平。 这导致较低的重量组成和潜在的成本节省。 用细长二氧化硅增强的橡胶化合物在轮胎中具有显着的优点，包括降低的滚动阻力，增加的胎面寿命，当然减轻重量。 本发明更具体地涉及一种具有胎面的轮胎，其中所述胎面由二氧化硅增强橡胶组合物组成，其中所述二氧化硅增强橡胶组合物包括（1）橡胶状聚合物和（2）细长二氧化硅，其中所述细长的 二氧化硅具有在约5nm至约40nm的范围内的宽度，并且其中所述细长二氧化硅具有约40nm至约300nm的长度。 本发明还公开了一种制备二氧化硅增强橡胶组合物的方法，其包括（1）将细长二氧化硅加入到橡胶状聚合物的胶乳中，和（2）从胶乳中回收二氧化硅增强的橡胶组合物。

公开(公告)号：US06578845B2

公开(公告)日：2003-06-17

申请号：US09828186

申请日：2001-04-09

Applicant: Sun Chen

Inventor： Sun Chen

IPC: B65H502

CPC classification number: H04N1/00554 ,  H04N1/00543 ,  H04N1/121

Abstract: An automatic document feeding apparatus for feeding a document to a flatbed scanner to conduct the scanning processes. The automatic document feeding apparatus includes an upper body, a lower body, a feeding path and at least a linkage set. The linkage set is able to uphold the upper body separated completely from the lower body. In this case, the spaces left between the upper body and the lower body is relatively wide for users to clear the jammed document. Further, the linkage set comprises plastic pad for providing stopping resistance to maintain said upper body at a certain distance above the lower body.

公开(公告)号：US6163659A

公开(公告)日：2000-12-19

申请号：US413506

申请日：1999-10-06

Applicant: Sun Chen

Inventor： Sun Chen

IPC: H04N1/00 ,  G03G15/00 ,  H04N1/04

CPC classification number: H04N1/00702 ,  H04N1/0057 ,  H04N1/00602 ,  H04N1/00681 ,  H04N1/00734 ,  H04N1/00755

Abstract: The present invention provides an automatic document-feeding device. The device includes a scanning area facing the scanner; a document-feeding path for transmitting therein a document to the scanning area to be scanned by the scanner; a document urging device for urging the document to be moved within the document-feeding path; and a scanning status indicating device connecting to the document-feeding path for changing a brightness situation when the document is passing to be observed by a user.

Abstract translation: 本发明提供一种自动送稿装置。 该装置包括面向扫描仪的扫描区域; 文档馈送路径，用于将文档发送到扫描仪要扫描的扫描区域; 文件推动装置，用于迫使文件在文件供给路径内移动; 以及连接到文件馈送路径的扫描状态指示装置，用于当用户要观察文档时，改变亮度状态。

公开(公告)号：US08932929B2

公开(公告)日：2015-01-13

申请号：US13812070

申请日：2012-04-24

Applicant: Shijin Ding ,  Sun Chen ,  Xingmei Cui ,  Pengfei Wang ,  Wei Zhang

Inventor： Shijin Ding ,  Sun Chen ,  Xingmei Cui ,  Pengfei Wang ,  Wei Zhang

IPC: H01L29/792 ,  H01L29/66 ,  H01L29/788

CPC classification number: H01L29/792 ,  H01L29/66742 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/7881

Abstract: The invention relates to a thin film transistor memory and its fabricating method. This memory using the substrate as the gate electrode from bottom to up includes a charge blocking layer, a charge storage layer, a charge tunneling layer, an active region of the device and source/drain electrodes. The charge blocking layer is the ALD grown Al2O3 film. The charge storage layer is the two layer metal nanocrystals which include the first layer metal nanocrystals, the insulating layer and the second layer metal nanocrystals grown by ALD method in sequence from bottom to up. The charge tunneling layer is the symmetrical stack layer which includes the SiO2/HfO2/SiO2 or Al2O3/HfO2/Al2O3 film grown by ALD method in sequence from bottom to up. The active region of the device is the IGZO film grown by the RF sputtering method, and it is formed by the standard lithography and wet etch method. The TFT memory in this invention has the advantage with large P/E window, good data retention, high P/E speed, stable threshold voltage and simple fabricating process.

Abstract translation: 本发明涉及薄膜晶体管存储器及其制造方法。 从底部到顶部使用基板作为栅电极的这种存储器包括电荷阻挡层，电荷存储层，电荷隧道层，器件的有源区和源极/漏极。 电荷阻挡层是ALD生长的Al 2 O 3膜。 电荷存储层是包括第一层金属纳米晶体，绝缘层和第二层金属纳米晶体的两层金属纳米晶体，其由ALD方法依次从下到上生长。 电荷隧穿层是对称的堆叠层，其包括通过ALD法从下到上生长的SiO 2 / HfO 2 / SiO 2或Al 2 O 3 / HfO 2 / Al 2 O 3膜。 器件的有源区是通过RF溅射法生长的IGZO膜，并且通过标准光刻和湿蚀刻法形成。 本发明的TFT存储器具有P / E窗口大，数据保持性好，P / E速度高，阈值电压稳定，制造工艺简单的优点。

公开(公告)号：US06638192B2

公开(公告)日：2003-10-28

申请号：US09413504

申请日：1999-10-06

Applicant: Sun Chen

Inventor： Sun Chen

IPC: F16H700

CPC classification number: B65H1/00 ,  B65H2301/5305 ,  F16H7/02 ,  F16H7/04

Abstract: An automatic cooling mechanism is provided for an electrical device having a high-temperature element and a rolling shaft. The mechanism includes a fan mounted within the electrical device and a transmission mechanism connected between the fan and the rolling shaft for transmitting rotational kinetic energy from the rolling shaft to the fan to rotate the fan for reducing the temperature of the high-temperature element.

Abstract translation: 为具有高温元件和滚动轴的电气设备提供自动冷却机构。 该机构包括安装在电气装置内的风扇和连接在风扇和滚动轴之间的传动机构，用于将旋转动能从滚动轴传递到风扇，以使风扇旋转以降低高温元件的温度。

公开(公告)号：US06320745B1

公开(公告)日：2001-11-20

申请号：US09413505

申请日：1999-10-06

Applicant: Sun Chen

Inventor： Sun Chen

IPC: H05K720

CPC classification number: B65H5/06 ,  B65H2301/5305 ,  B65H2403/42

Abstract: An automatic cooling mechanism for an electrical device having a high-temperature element and a rolling shaft is provided. The mechanism includes a fan mounted within the electrical device; and a rotation transmission and variation mechanism connected between the fan and the rolling shaft for variationally transmitting rotational kinetic energy from the rolling shaft to the fan.

Abstract translation: 提供一种具有高温元件和滚动轴的电气设备的自动冷却机构。 该机构包括安装在电气装置内的风扇; 以及连接在风扇和滚动轴之间的旋转传递和变化机构，用于将旋转动能从滚动轴变换为风扇。