公开(公告)号：US11374145B2

公开(公告)日：2022-06-28

申请号：US16704983

申请日：2019-12-05

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Yu-Chen Shen ,  Périne Jaffrennou ,  Gilles Olav Tanguy Sylvain Poulain ,  Michael C. Johnson ,  Seung Bum Rim

IPC分类号： H01L31/18 ,  H01L31/0216 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0747

摘要： Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

公开(公告)号：US10030303B2

公开(公告)日：2018-07-24

申请号：US14578332

申请日：2014-12-19

申请人： SunPower Corporation ,  Total Marketing Services

发明人： Yu-Chen Shen ,  Taiqing Qiu ,  Robert Woehl ,  Kieran Mark Tracy ,  Mukul Agrawal

IPC分类号： C23C14/34 ,  C23C14/50 ,  H01J37/32 ,  C23C14/16

摘要： Sputter tools are described. In one embodiment, an apparatus to support a wafer includes a pallet having a depression to receive the wafer. The pallet includes an opening below the depression, and an edge in the depression is to support the wafer over the opening. A cover at least partially covers the opening. In one example, the cover may be a plate with one or more holes, and a pipe may be located below each of the holes in the cover. In one embodiment, a wafer-processing system includes a processing chamber and a pallet with a depression to receive a wafer. The pallet has an opening below the depression, and an edge in the depression supports the wafer over the opening. In one such embodiment, a cover at least partially covers the opening. According to one embodiment, an energy-absorbing material is disposed below the opening in the pallet.

公开(公告)号：US20220293801A1

公开(公告)日：2022-09-15

申请号：US17829152

申请日：2022-05-31

申请人： Sunpower Corporation ,  Total Marketing Services

发明人： Yu-Chen Shen ,  Perine Jaffrennou ,  Gilles Olav Tanguy Sylvain Poulain ,  Michael C. Johnson ,  Seung Bum Rim

IPC分类号： H01L31/0216 ,  H01L31/18 ,  H01L31/0236 ,  H01L31/068 ,  H01L31/0747

摘要： Methods of fabricating solar cells using UV-curing of light-receiving surfaces of the solar cells, and the resulting solar cells, are described herein. In an example, a method of fabricating a solar cell includes forming a passivating dielectric layer on a light-receiving surface of a silicon substrate. The method also includes forming an anti-reflective coating (ARC) layer below the passivating dielectric layer. The method also includes exposing the ARC layer to ultra-violet (UV) radiation. The method also includes, subsequent to exposing the ARC layer to ultra-violet (UV) radiation, thermally annealing the ARC layer.

公开(公告)号：US10957809B2

公开(公告)日：2021-03-23

申请号：US16692890

申请日：2019-11-22

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L21/00 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US09685571B2

公开(公告)日：2017-06-20

申请号：US13966743

申请日：2013-08-14

申请人： SunPower Corporation

发明人： Yu-Chen Shen ,  Ernest Hasselbrink, Jr. ,  David F. J. Kavulak

IPC分类号： H01L31/048

CPC分类号： H01L31/048 ,  H01L31/0481 ,  Y02B10/12 ,  Y02E10/50

摘要： A solar cell module includes solar cells that are encased in a protective package and a high electric susceptibility layer that is placed on the solar cells. The high electric susceptibility layer is polarized such that a sheet charge is developed at the interface of the high electric susceptibility layer and the solar cells. The protective package includes an encapsulant that encapsulates the solar cells. The encapsulant may be a multilayer encapsulant, with the high electric susceptibility layer being a layer of the encapsulant. The high electric susceptibility layer may also be a material that is separate from the encapsulant.

公开(公告)号：US20210249551A1

公开(公告)日：2021-08-12

申请号：US17183164

申请日：2021-02-23

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US20190273467A1

公开(公告)日：2019-09-05

申请号：US16298801

申请日：2019-03-11

申请人： SunPower Corporation

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： H02S50/15 ,  G01N21/64

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

公开(公告)号：US20200091366A1

公开(公告)日：2020-03-19

申请号：US16692890

申请日：2019-11-22

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.

公开(公告)号：US10230329B2

公开(公告)日：2019-03-12

申请号：US15425709

申请日：2017-02-06

申请人： SUNPOWER CORPORATION

发明人： Xiuwen Tu ,  David Aitan Soltz ,  Michael C. Johnson ,  Seung Bum Rim ,  Taiqing Qiu ,  Yu-Chen Shen ,  Kieran Mark Tracy

IPC分类号： G01N21/64 ,  H02S50/15

摘要： Methods of testing a semiconductor, and semiconductor testing apparatus, are described. In an example, a method for testing a semiconductor can include applying light on the semiconductor to induce photonic degradation. The method can also include receiving a photoluminescence measurement induced from the applied light from the semiconductor and monitoring the photonic degradation of the semiconductor from the photoluminescence measurement.

公开(公告)号：US11605750B2

公开(公告)日：2023-03-14

申请号：US17183164

申请日：2021-02-23

申请人： SunPower Corporation

发明人： Richard M. Swanson ,  Marius M. Bunea ,  Michael C. Johnson ,  David D. Smith ,  Yu-Chen Shen ,  Peter J. Cousins ,  Tim Dennis

IPC分类号： H01L21/00 ,  H01L31/0747 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/072 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/0236

摘要： Solar cells having emitter regions composed of wide bandgap semiconductor material are described. In an example, a method includes forming, in a process tool having a controlled atmosphere, a thin dielectric layer on a surface of a semiconductor substrate of the solar cell. The semiconductor substrate has a bandgap. Without removing the semiconductor substrate from the controlled atmosphere of the process tool, a semiconductor layer is formed on the thin dielectric layer. The semiconductor layer has a bandgap at least approximately 0.2 electron Volts (eV) above the bandgap of the semiconductor substrate.