MICRO-METAL-MOLD WITH PATTERNS OF GROOVES, PROTRUSIONS AND THROUGH-OPENINGS, PROCESSES FOR FABRICATING THE MOLD, AND MICRO-METAL-SHEET PRODUCT MADE FROM THE MOLD
    4.
    发明申请
    MICRO-METAL-MOLD WITH PATTERNS OF GROOVES, PROTRUSIONS AND THROUGH-OPENINGS, PROCESSES FOR FABRICATING THE MOLD, AND MICRO-METAL-SHEET PRODUCT MADE FROM THE MOLD 审中-公开
    微型金属模具,具有格栅,突出和开放的图案,用于制作模具的工艺和从模具制成的微金属片产品

    公开(公告)号:US20100294654A1

    公开(公告)日:2010-11-25

    申请号:US12596052

    申请日:2007-08-24

    CPC分类号: C25D1/10

    摘要: The present invention relates to a micro metal mold for manufacturing micro metal sheet products provided with a fine or micro opening(s) or an aperture(s) together with or independently of a groove(s) and/or a protrusion(s), a method for making the mold by the electroforming or electroplating method, a method for making the mold and micro metal sheet products manufactured by using the micro metal mold. According to the invention, it is possible to manufacture micro metal sheet products, provided with fine and precise dimensions of an opening(s) as well as a groove(s) and/or a protrusion(s), under a mass production.

    摘要翻译: 本发明涉及一种用于制造微型金属片材产品的微型金属模具,该微型金属板材产品与凹槽和/或突起一起或独立于凹槽和/或突起一起设置有精细或微小开口或孔, 通过电铸或电镀法制造模具的方法,通过使用微型金属模具制造模具和微型金属片材产品的方法。 根据本发明,可以在批量生产的情况下制造微细金属片产品,其具有精细和精确的开口尺寸以及凹槽和/或突起。

    Method for forming conductive line of semiconductor device
    5.
    发明授权
    Method for forming conductive line of semiconductor device 有权
    形成半导体器件导线的方法

    公开(公告)号:US06335297B1

    公开(公告)日:2002-01-01

    申请号:US09592438

    申请日:2000-06-12

    IPC分类号: H01L2131

    摘要: Method for forming a conductive line of a semiconductor device which has a high thermal stability and low electrical resistance includes the steps of forming an insulating layer on a semiconductor substrate, sequentially forming a semiconductor layer and a tungsten film on the insulating layer, nitrifying the tungsten film with heat treatment, and selectively etching the tungsten film and the semiconductor layer.

    摘要翻译: 用于形成具有高热稳定性和低电阻的半导体器件的导线的方法包括以下步骤:在半导体衬底上形成绝缘层,在绝缘层上依次形成半导体层和钨膜,硝化钨 膜,并且选择性地蚀刻钨膜和半导体层。