公开(公告)号：US20110162764A1

公开(公告)日：2011-07-07

申请号：US12984811

申请日：2011-01-05

申请人： Sung Ho Kim ,  Jong Hyuk Baek ,  Tae Kyu Kim ,  Woo Gon Kim ,  Jun Hwan Kim ,  Chang Hee Han ,  Chan Bock Lee ,  Yeong-Il Kim ,  Dohee Hahn

发明人： Sung Ho Kim ,  Jong Hyuk Baek ,  Tae Kyu Kim ,  Woo Gon Kim ,  Jun Hwan Kim ,  Chang Hee Han ,  Chan Bock Lee ,  Yeong-Il Kim ,  Dohee Hahn

IPC分类号： C21D8/02 ,  C21D6/00 ,  C22C38/00 ,  C22C38/54 ,  C22C38/46 ,  C22C38/44 ,  C22C38/48

CPC分类号： C21D6/002 ,  C21D1/28 ,  C21D7/13 ,  C21D8/0221 ,  C21D2211/005 ,  C21D2211/008 ,  C22C1/02 ,  C22C38/001 ,  C22C38/02 ,  C22C38/04 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  C22C38/54

摘要： High-Cr ferritic/martensitic steels having an improved tensile strength and creep resistance are provided, which includes 0.04˜0.13 weight % of carbon, 0.03˜0.07 weight % of silicon, 0.40˜0.50 weight % of manganese, 0.40˜0.50 weight % of nickel, 8.5˜9.5 weight % of chromium, 0.45˜0.55 weight % of molybdenum, 0.10˜0.25 weight % of vanadium, 0.02˜0.10 weight % of tantalum, 0.15˜0.25 weight % of niobium, 1.5˜3.0 weight % of tungsten, 0.05˜0.12 weight % of nitrogen, 0.004˜0.008 weight % of boron, and optionally, 0.002˜0.010 weight % of phosphorus or 0.01˜0.08 weight % of zirconium, and iron balance. By regulating the contents of alloying elements such as niobium, tantalum, tungsten, nitrogen, boron, zirconium, carbon, the high-Cr ferritic/martensitic steels with superior tensile strength and creep resistance are provided, and can be effectively used as an in-core structural material for Generation IV sodium-cooled fast reactor (SFR) which is used under high temperature and high irradiation conditions.

摘要翻译： 提供了具有改进的抗拉强度和抗蠕变性的高Cr铁素体/马氏体钢，其包括0.04〜0.13重量％的碳，0.03〜0.07重量％的硅，0.40〜0.50重量％的锰，0.40〜0.50重量％的 镍，8.5〜9.5重量％的铬，0.45〜0.55重量％的钼，0.10〜0.25重量％的钒，0.02〜0.10重量％的钽，0.15〜0.25重量％的铌，1.5〜3.0重量％的钨， 0.05〜0.12重量％的氮，0.004〜0.008重量％的硼，以及任选的0.002〜0.10重量％的磷或0.01〜0.08重量％的锆和铁的平衡。 通过调节铌，钽，钨，氮，硼，锆，碳等合金元素的含量，提供了具有优异的抗拉强度和抗蠕变性的高Cr铁素体/马氏体钢， 在高温高照射条件下使用的第IV代钠冷快堆（SFR）的核心结构材料。

公开(公告)号：US09598750B2

公开(公告)日：2017-03-21

申请号：US13280585

申请日：2011-10-25

申请人： Sung Ho Kim ,  Jong Hyuk Baek ,  Tae Kyu Kim ,  Woo Gon Kim ,  Jun Hwan Kim ,  Chang Hee Han ,  Chan Bock Lee ,  Yeong-Il Kim ,  Dohee Hahn

发明人： Sung Ho Kim ,  Jong Hyuk Baek ,  Tae Kyu Kim ,  Woo Gon Kim ,  Jun Hwan Kim ,  Chang Hee Han ,  Chan Bock Lee ,  Yeong-Il Kim ,  Dohee Hahn

IPC分类号： C22C38/02 ,  C22C38/00 ,  C21D6/00 ,  C22C1/02 ,  C22C38/04 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  C22C38/54 ,  G21C1/02 ,  G21C3/07

CPC分类号： C22C38/001 ,  C21D6/002 ,  C21D2211/005 ,  C21D2211/008 ,  C22C1/02 ,  C22C38/02 ,  C22C38/04 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  C22C38/54 ,  G21C1/02 ,  G21C3/07

摘要： Disclosed herein is a high Cr Ferritic/Martensitic steel comprising 0.04 to 0.13% by weight of carbon, 0.03 to 0.07% by weight of silicon, 0.40 to 0.50% by weight of manganese, 0.40 to 0.50% by weight of nickel, 8.5 to 9.5% by weight of chromium, 0.45 to 0.55% by weight of molybdenum, 0.10 to 0.25% by weight of vanadium, 0.02 to 0.10% by weight of tantalum, 0.21 to 0.25% by weight of niobium, 1.5 to 3.0% by weight of tungsten, 0.015 to 0.025% by weight of nitrogen, 0.01 to 0.02% by weight of boron and iron balance. By regulating the contents of alloying elements such as nitrogen, born, the high Cr Ferritic/Martensitic steel with superior tensile strength and creep resistance is provided, and can be effectively used as an in-core component material for sodium-cooled fast reactor (SFR).

公开(公告)号：US20120106693A1

公开(公告)日：2012-05-03

申请号：US13280585

申请日：2011-10-25

申请人： Sung Ho Kim ,  Jong Hyuk Baek ,  Tae Kyu Kim ,  Woo Gon Kim ,  Jun Hwan Kim ,  Chang Hee Han ,  Chan Bock Lee ,  Yeong-II Kim ,  Dohee Hahn

发明人： Sung Ho Kim ,  Jong Hyuk Baek ,  Tae Kyu Kim ,  Woo Gon Kim ,  Jun Hwan Kim ,  Chang Hee Han ,  Chan Bock Lee ,  Yeong-II Kim ,  Dohee Hahn

IPC分类号： G21C1/02 ,  C22C38/44 ,  G21C1/00 ,  C22C38/48 ,  C22C38/54 ,  C22C38/02 ,  C21D8/00 ,  C22C38/46

CPC分类号： C22C38/001 ,  C21D6/002 ,  C21D2211/005 ,  C21D2211/008 ,  C22C1/02 ,  C22C38/02 ,  C22C38/04 ,  C22C38/44 ,  C22C38/46 ,  C22C38/48 ,  C22C38/54 ,  G21C1/02 ,  G21C3/07

摘要： Disclosed herein is a high Cr Ferritic/Martensitic steel comprising 0.04 to 0.13% by weight of carbon, 0.03 to 0.07% by weight of silicon, 0.40 to 0.50% by weight of manganese, 0.40 to 0.50% by weight of nickel, 8.5 to 9.5% by weight of chromium, 0.45 to 0.55% by weight of molybdenum, 0.10 to 0.25% by weight of vanadium, 0.02 to 0.10% by weight of tantalum, 0.21 to 0.25% by weight of niobium, 1.5 to 3.0% by weight of tungsten, 0.015 to 0.025% by weight of nitrogen, 0.01 to 0.02% by weight of boron and iron balance. By regulating the contents of alloying elements such as nitrogen, born, the high Cr Ferritic/Martensitic steel with to superior tensile strength and creep resistance is provided, and can be effectively used as an in-core component material for sodium-cooled fast reactor (SFR).

摘要翻译： 本文公开了一种高Cr铁素体/马氏体钢，其包含0.04至0.13重量％的碳，0.03至0.07重量％的硅，0.40至0.50重量％的锰，0.40至0.50重量％的镍，8.5至9.5 铬，0.45〜0.55重量％的钼，0.10〜0.25重量％的钒，0.02〜0.10重量％的钽，0.21〜0.25重量％的铌，1.5〜3.0重量％的钨 ，0.015〜0.025重量％的氮，0.01〜0.02重量％的硼和铁的平衡。 通过调节氮，合金元素含量，提供高Cr铁素体/马氏体钢，具有优异的抗拉强度和抗蠕变性，可以有效地用作钠冷快堆的核心成分材料（ SFR）。

公开(公告)号：US06627105B1

公开(公告)日：2003-09-30

申请号：US09722110

申请日：2000-11-27

申请人： Tae Kyu Kim ,  Jum Soo Kim ,  Mun Hwa Lee ,  Jong Woo Kim

发明人： Tae Kyu Kim ,  Jum Soo Kim ,  Mun Hwa Lee ,  Jong Woo Kim

IPC分类号： C04B35491

CPC分类号： C01G25/006 ,  C01P2002/72 ,  C04B35/491 ,  C04B2235/3249 ,  C04B2235/3251 ,  C04B2235/3296 ,  C04B2235/449 ,  C04B2235/5204 ,  H01L41/187

摘要： There is disclosed a method of fabricating a piezoelectric ceramics. It can obtain a small grain size and a fine grain phase by forming a combined powder being major components, stirring the combined powder with (COOH)2 water solution, dropping a Pb(NO3)2 water solution into the stirred powder, and forming a PZT powder by calcinations and sintering processes.

摘要翻译： 公开了一种制造压电陶瓷的方法。 通过形成作为主要成分的组合粉末，用（COOH）2水溶液搅拌合并的粉末，将Pb（NO 3）2水溶液滴入搅拌粉末中，可以获得小粒径和细晶粒相，并形成 PZT粉末通过煅烧和烧结过程。

公开(公告)号：US07940584B2

公开(公告)日：2011-05-10

申请号：US11927432

申请日：2007-10-29

申请人： Tae Kyu Kim ,  Jong Woo Kim ,  Xianghua Ye

发明人： Tae Kyu Kim ,  Jong Woo Kim ,  Xianghua Ye

IPC分类号： G11C7/00

CPC分类号： G11C29/50 ,  G11C16/04 ,  G11C29/50004

摘要： The present invention discloses a method for inspecting the electrical performance of a flash memory cell, which comprises: performing electron-storage programming on a flash memory cell for a pre-determined period; screening out flash memory cells that reach a specified reference value as a mother batch of flash memory cells that meet the preliminary requirement, by measuring the threshold voltage; then performing a second electron-storage programming on the flash memory cells screened out for a certain time period; baking these flash memory cells; and finally, measuring the threshold voltage of these baked flash memory cells again and determining whether the threshold voltage can still be maintained at or above the reference value, so that it can be determined ultimately whether the flash memory cells meet the electrical performance requirements.

摘要翻译： 本发明公开了一种用于检查闪速存储单元的电气性能的方法，该方法包括：在闪速存储单元上进行预定周期的电子存储编程; 通过测量阈值电压，筛选达到指定参考值的闪存单元作为满足初步要求的母版闪存单元; 然后在闪存单元上执行第二电子存储节目，屏蔽一段时间; 烘烤这些闪存单元; 最后，再次测量这些烘焙闪速存储器单元的阈值电压，并确定阈值电压是否仍然可以保持在基准值以上，从而可以最终确定闪存单元是否满足电气性能要求。

公开(公告)号：US20080133984A1

公开(公告)日：2008-06-05

申请号：US11927432

申请日：2007-10-29

申请人： Tae Kyu Kim ,  Jong Woo Kim ,  Xianghua Ye

发明人： Tae Kyu Kim ,  Jong Woo Kim ,  Xianghua Ye

IPC分类号： G11C29/00

CPC分类号： G11C29/50 ,  G11C16/04 ,  G11C29/50004

摘要： The present invention discloses a method for inspecting the electrical performance of a flash memory cell, which comprises: performing electron-storage programming on a flash memory cell for a pre-determined period; screening out flash memory cells that reach a specified reference value as a mother batch of flash memory cells that meet the preliminary requirement, by measuring the threshold voltage; then performing a second electron-storage programming on the flash memory cells screened out for a certain time period; baking these flash memory cells; and finally, measuring the threshold voltage of these baked flash memory cells again and determining whether the threshold voltage can still be maintained at or above the reference value, so that it can be determined ultimately whether the flash memory cells meet the electrical performance requirements.

摘要翻译： 本发明公开了一种用于检查闪速存储单元的电气性能的方法，该方法包括：在闪速存储单元上进行预定周期的电子存储编程; 通过测量阈值电压，筛选达到指定参考值的闪存单元作为满足初步要求的母版闪存单元; 然后在闪存单元上执行第二电子存储节目，屏蔽一段时间; 烘烤这些闪存单元; 最后，再次测量这些烘焙闪速存储器单元的阈值电压，并确定阈值电压是否仍然可以保持在基准值以上，从而可以最终确定闪存单元是否满足电气性能要求。

公开(公告)号：US06392929B1

公开(公告)日：2002-05-21

申请号：US09721935

申请日：2000-11-27

申请人： Min Kyu Kim ,  Sheung Hee Park ,  Ju Yeab Lee ,  Tae Kyu Kim

发明人： Min Kyu Kim ,  Sheung Hee Park ,  Ju Yeab Lee ,  Tae Kyu Kim

IPC分类号： G11C1604

CPC分类号： G11C16/12

摘要： There is disclosed a method of programming a flash memory cell, which is performed applying a given voltage a gate and a drain and maintaining a source and a substrate at a ground potential. The method variably applies a given voltage, with two or more steps, to one of the gate and drain terminals while applying a given voltage to the other of the gate and drain terminals, thus reducing the programming current per cell. Accordingly, the present invention can improve reliability and throughput of the flash memory cell.

摘要翻译： 公开了一种对闪存单元进行编程的方法，该闪速存储单元是施加给定电压的栅极和漏极，并将源极和衬底保持在地电位。 该方法将施加给栅极和漏极端子的给定电压的给定电压可变地施加到栅极和漏极端子中的两个或更多个步骤，从而减小每个单元的编程电流。 因此，本发明可以提高闪存单元的可靠性和吞吐量。

公开(公告)号：US06421278B1

公开(公告)日：2002-07-16

申请号：US09722353

申请日：2000-11-28

申请人： Jong Woo Kim ,  Tae Kyu Kim

发明人： Jong Woo Kim ,  Tae Kyu Kim

IPC分类号： G11C1633

CPC分类号： G11C29/50 ,  G11C16/04 ,  G11C2029/5002 ,  H01L27/0251

摘要： There is disclosed a method of improving an electrostatic discharge (“ESD”) characteristic in a flash memory device. In order to prevent generation of leak current caused when charges generated upon a testing of the ESD are introduced into an internal circuit, the prevent can prevent a current fail in the internal circuit, by connecting a drain junction power supply terminal and a ground terminal line, in the connection of an internal circuit and a SDA input buffer in a flash memory device, to connection terminals spaced apart to each other.

摘要翻译： 公开了一种改善闪存装置中的静电放电（“ESD”）特性的方法。 为了防止在将ESD测试时产生的电荷引入内部电路时产生漏电流，防止通过连接漏极电源端子和接地端子线来防止内部电路的电流故障 在闪速存储器件中的内部电路和SDA输入缓冲器的连接到彼此间隔开的连接端子。

公开(公告)号：US06373178B1

公开(公告)日：2002-04-16

申请号：US09481702

申请日：2000-01-12

申请人： Sung Ho Cho ,  Hyun Cheol Kim ,  Won Hyun Kim ,  Gill Young Jung ,  Ki Bog Son ,  Tae Kyu Kim ,  Dong Young Kim

发明人： Sung Ho Cho ,  Hyun Cheol Kim ,  Won Hyun Kim ,  Gill Young Jung ,  Ki Bog Son ,  Tae Kyu Kim ,  Dong Young Kim

IPC分类号： H01J2980

CPC分类号： H01J29/503

摘要： Electron gun for a color CRT having main lens forming electrodes wherein a depth from a rim portion of an anode to an electrostatic field control electrode is deeper than the depth from the rim portion of a cathode to the electrostatic field control electrode, and a DQ lens action of a center beam portion formed by the DQ lens unit being weaker than the DQ lens action of an outer electron beam portion, whereby reducing a spot diameter by enlarging a main lens diameter and correcting inconsistency between a center beam and an outer beam in the DQ lens.

摘要翻译： 具有主透镜形成电极的彩色CRT的电子枪，其中从阳极的边缘部分到静电场控制电极的深度比从阴极的边缘部分到静电场控制电极的深度更深，以及DQ透镜 由DQ透镜单元形成的中心光束部分的作用比外部电子束部分的DQ透镜作用更弱，从而通过放大主透镜直径并校正中心光束和外光束之间的不一致来减小光点直径 DQ镜头。

公开(公告)号：US06650039B1

公开(公告)日：2003-11-18

申请号：US09589889

申请日：2000-06-09

申请人： Tae Kyu Kim ,  Hyun Cheol Kim

发明人： Tae Kyu Kim ,  Hyun Cheol Kim

IPC分类号： H01J2950

CPC分类号： H01J29/503

摘要： An electron gun is provided for a color CRT having a triode for emitting, controlling, and accelerating R, G, B beams, and main lens forming electrodes for focusing the R, G, B beams emitted from the triode onto a screen. The electron gun includes first dynamic quadrupole lens forming electrodes for providing a vertical focusing action and a horizontal focusing action to be applied to the R, G, B beams such that the vertical focusing action is different from the horizontal focusing action, and second dynamic quadrupole lens forming electrodes for providing horizontal/vertical focusing actions to be applied to the R, B beams, side beams, and horizontal/vertical focusing actions to be applied to the G beam, a center beam, the horizontal/vertical focusing actions to be applied to the R, B beams being different from the horizontal/vertical focusing actions to be applied to the G beam. The first dynamic quadrupole lens forming electrodes and the second dynamic quadrupole lens forming electrodes being are arranged in order starting from the main lens forming electrodes toward the triode, thereby enhancing a resolution.

摘要翻译： 为具有三极管的彩色CRT提供电子枪，用于发射，控制和加速R，G，B光束和主透镜形成电极，用于将从三极管发出的R，G，B光束聚焦到屏幕上。 电子枪包括第一动态四极透镜形成电极，用于提供垂直聚焦作用和水平聚焦作用，以施加到R，G，B光束，使得垂直聚焦作用不同于水平聚焦作用，第二动态四极杆 透镜形成电极，用于提供施加到R，B光束，侧光束的水平/垂直聚焦动作，以及要施加到G光束的水平/垂直聚焦动作，中心光束，要施加的水平/垂直聚焦动作 对于R，B光束不同于要施加到G光束的水平/垂直聚焦动作。 第一动态四极透镜形成电极和第二动态四极透镜形成电极按顺序从主透镜形成电极朝向三极管依次布置，从而提高分辨率。