利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

52 条记录 (耗时 0.032 秒)

    Method and apparatus for identifying JAVA PUSH request equipments using bluetooth in a mobile communication terminal
    1.
    发明授权
    Method and apparatus for identifying JAVA PUSH request equipments using bluetooth in a mobile communication terminal 有权
    用于在移动通信终端中使用蓝牙识别JAVA PUSH请求设备的方法和装置

    公开(公告)号：US08135345B2

    公开(公告)日：2012-03-13

    申请号：US12276789

    申请日：2008-11-24

    申请人： Sung-Chan Lee ,  Jae-Min Lee ,  Hyun-Su Kim ,  Young-Soo Yun ,  Soo-Hyeon Lee ,  Ji-Hyun Kim

    发明人： Sung-Chan Lee ,  Jae-Min Lee ,  Hyun-Su Kim ,  Young-Soo Yun ,  Soo-Hyeon Lee ,  Ji-Hyun Kim

    IPC分类号： H04B7/00

    CPC分类号： H04L67/16 ,  H04L67/04 ,  H04L67/26

    摘要： Provided are an identifying method and an apparatus for identifying a plurality of JAVA™ PUSH request terminals using Bluetooth® communication in a mobile communication terminal. According to the method, acquiring information records for performing JAVA™ PUSH about a plurality of terminals by requesting a service search through a Logical Link Control and Adaption Protocol (L2CAP) connection between the mobile communication terminal and the plurality of JAVA™ PUSH request terminals and displaying unique identification information of the plurality of JAVA™ PUSH request terminals by checking the information records of the plurality of JAVA™ PUSH request terminals.

    摘要翻译： 提供了一种用于在移动通信终端中使用蓝牙通信识别多个JAVA TM PUSH请求终端的识别方法和装置。 根据该方法，通过在移动通信终端与多个JAVA TM PUSH请求终端之间的逻辑链路控制和适应协议（L2CAP）连接请求服务搜索来获取关于多个终端的用于执行JAVA TM PUSH的信息记录，以及 通过检查多个JAVA TM PUSH请求终端的信息记录来显示多个JAVA TM PUSH请求终端的唯一标识信息。

    METHOD AND APPARATUS FOR IDENTIFYING JAVA PUSH REQUEST EQUIPMENTS USING BLUETOOTH IN A MOBILE COMMUNICATION TERMINAL
    3.
    发明申请
    METHOD AND APPARATUS FOR IDENTIFYING JAVA PUSH REQUEST EQUIPMENTS USING BLUETOOTH IN A MOBILE COMMUNICATION TERMINAL 有权
    使用移动通信终端中的蓝牙识别JAVA推送请求设备的方法和装置

    公开(公告)号：US20090143011A1

    公开(公告)日：2009-06-04

    申请号：US12276789

    申请日：2008-11-24

    申请人： Sung-Chan LEE ,  Jae-Min Lee ,  Hyun-Su Kim ,  Young-Soo Yun ,  Soo-Hyeon Lee ,  Ji-Hyun Kim

    发明人： Sung-Chan LEE ,  Jae-Min Lee ,  Hyun-Su Kim ,  Young-Soo Yun ,  Soo-Hyeon Lee ,  Ji-Hyun Kim

    IPC分类号： H04B7/00 ,  G06F9/445

    CPC分类号： H04L67/16 ,  H04L67/04 ,  H04L67/26

    摘要： Provided are an identifying method and an apparatus for identifying a plurality of JAVA™ PUSH request terminals using Bluetooth® communication in a mobile communication terminal. According to the method, acquiring information records for performing JAVA™ PUSH about a plurality of terminals by requesting a service search through a Logical Link Control and Adaption Protocol (L2CAP) connection between the mobile communication terminal and the plurality of JAVA™ PUSH request terminals and displaying unique identification information of the plurality of JAVA™ PUSH request terminals by checking the information records of the plurality of JAVA™ PUSH request terminals.

    摘要翻译： 提供了一种用于在移动通信终端中使用蓝牙通信识别多个JAVA TM PUSH请求终端的识别方法和装置。 根据该方法，通过在移动通信终端和多个JAVA TM之间的逻辑链路控制和适应协议（L2CAP）连接请求服务搜索来获取用于执行关于多个终端的JAVA TM PUSH的信息记录， PUSH请求终端，并通过检查多个JAVA TM PUSH请求终端的信息记录来显示多个JAVA TM PUSH请求终端的唯一标识信息。

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20080211038A1

    公开(公告)日：2008-09-04

    申请号：US11965420

    申请日：2007-12-27

    申请人： Jong-Ho Yun ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Hyun-Su Kim ,  Eun-Ok Lee

    发明人： Jong-Ho Yun ,  Gil-Heyun Choi ,  Byung-Hee Kim ,  Hyun-Su Kim ,  Eun-Ok Lee

    IPC分类号： H01L29/78 ,  H01L21/3205

    CPC分类号： H01L21/28097 ,  H01L29/4975 ,  H01L29/66545

    摘要： A method of fabricating a semiconductor device includes forming a preliminary gate pattern on a semiconductor substrate. The preliminary gate pattern includes a gate oxide pattern, a conductive pattern, and a sacrificial insulating pattern. The method further includes forming spacers on opposite sidewalls of the preliminary gate pattern, forming an interlayer dielectric pattern to expose the sacrificial insulating pattern, removing the sacrificial insulating pattern to form an opening to expose the conductive pattern, transforming the conductive pattern into a metal silicide layer and forming a metal barrier pattern along an inner profile of the opening and a metal conductive pattern to fill the opening including the metal barrier pattern. The metal silicide layer and the metal conductive pattern constitute a gate electrode.

    摘要翻译： 制造半导体器件的方法包括在半导体衬底上形成初步栅极图案。 初步栅极图案包括栅极氧化物图案，导电图案和牺牲绝缘图案。 该方法还包括在初步栅极图案的相对侧壁上形成间隔物，形成层间电介质图案以暴露牺牲绝缘图案，去除牺牲绝缘图案以形成露出导电图案的开口，将导电图案转变为金属硅化物 并且沿着开口的内部轮廓形成金属阻挡图案和金属导电图案以填充包括金属阻挡图案的开口。 金属硅化物层和金属导电图案构成栅电极。

    Methods of forming field effect transistors having metal silicide gate electrodes
    5.
    发明授权
    Methods of forming field effect transistors having metal silicide gate electrodes 有权
    形成具有金属硅化物栅电极的场效应晶体管的方法

    公开(公告)号：US07416968B2

    公开(公告)日：2008-08-26

    申请号：US11230586

    申请日：2005-09-20

    申请人： Hyun-Su Kim ,  Jong-Ho Yun ,  Byung-Hak Lee ,  Eun-Ji Jung ,  Gil-Heyun Choi

    发明人： Hyun-Su Kim ,  Jong-Ho Yun ,  Byung-Hak Lee ,  Eun-Ji Jung ,  Gil-Heyun Choi

    IPC分类号： H01L21/336 ,  H01L21/3205

    CPC分类号： H01L21/28097 ,  H01L21/823835 ,  H01L29/4975 ,  H01L29/665 ,  H01L29/66545

    摘要： Methods of forming field effect transistors according to embodiments of the invention include forming a conductive gate electrode (e.g., polysilicon gate electrode) on a semiconductor substrate and forming a first metal layer on the conductive gate electrode. This first metal layer may include a material selected from a group consisting of nickel, cobalt, titanium, tantalum and tungsten. The first metal layer and the conductive gate electrode are thermally treated for a sufficient duration to convert a first portion of the conductive gate electrode into a first metal silicide region. The first metal layer and the first metal silicide region are then removed to expose a second portion of the conductive gate electrode. A second metal layer is then formed on the second portion of the conductive gate electrode. This second metal layer may include a material selected from a group consisting of nickel, cobalt, titanium, tantalum and tungsten. The second metal layer and the second portion of the conductive gate electrode are thermally treated for a sufficient duration to thereby convert the second portion of the conductive gate electrode into a second metal silicide region.

    摘要翻译： 根据本发明的实施例的形成场效应晶体管的方法包括在半导体衬底上形成导电栅电极（例如，多晶硅栅电极），并在导电栅电极上形成第一金属层。 该第一金属层可以包括选自镍，钴，钛，钽和钨的材料。 对第一金属层和导电栅电极进行热处理足够的时间以将导电栅电极的第一部分转换成第一金属硅化物区域。 然后去除第一金属层和第一金属硅化物区域以暴露导电栅电极的第二部分。 然后在导电栅电极的第二部分上形成第二金属层。 该第二金属层可以包括选自镍，钴，钛，钽和钨的材料。 第二金属层和导电栅电极的第二部分被热处理足够的持续时间，从而将导电栅电极的第二部分转换成第二金属硅化物区域。

    STACKED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION
    6.
    发明申请
    STACKED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION 有权
    堆叠半导体器件和制造方法

    公开(公告)号：US20080199991A1

    公开(公告)日：2008-08-21

    申请号：US12108591

    申请日：2008-04-24

    申请人： Hyun-Su Kim ,  Gil-Heyun Choi ,  Jong-Ho Yun ,  Sug-Woo Jung ,  Eun-Ji Jung

    发明人： Hyun-Su Kim ,  Gil-Heyun Choi ,  Jong-Ho Yun ,  Sug-Woo Jung ,  Eun-Ji Jung

    IPC分类号： H01L21/84

    CPC分类号： H01L27/0688 ,  H01L21/8221

    摘要： A stacked semiconductor device comprises a lower transistor formed on a semiconductor substrate, a lower interlevel insulation film formed on the semiconductor substrate over the lower transistor, an upper transistor formed on the lower interlayer insulation film over the lower transistor, and an upper interlevel insulation film formed on the lower interlevel insulation film over the upper transistor. The stacked semiconductor device further comprises a contact plug connected between a drain or source region of the lower transistor and a source or drain region of the upper transistor, and an extension layer connected to a lateral face of the source or drain region of the upper transistor to enlarge an area of contact between the source or drain region of the upper transistor and a side of the contact plug.

    摘要翻译： 叠层半导体器件包括形成在半导体衬底上的下晶体管，形成在半导体衬底上的下层晶体管上的下层间绝缘膜，形成在下晶体管上的下层间绝缘膜上的上晶体管，以及上层间绝缘膜 形成在上层晶体管上的较低层间绝缘膜上。 叠层半导体器件还包括连接在下晶体管的漏极或源极区域与上部晶体管的源极或漏极区域之间的接触插塞以及连接到上部晶体管的源极或漏极区域的侧面的延伸层 以扩大上部晶体管的源极或漏极区域与接触插塞的一侧之间的接触面积。

    METHOD FORMING OHMIC CONTACT LAYER AND METAL WIRING IN SEMICONDUCTOR DEVICE
    7.
    发明申请
    METHOD FORMING OHMIC CONTACT LAYER AND METAL WIRING IN SEMICONDUCTOR DEVICE 有权
    在半导体器件中形成OHMIC接触层和金属接线的方法

    公开(公告)号：US20080124921A1

    公开(公告)日：2008-05-29

    申请号：US11772953

    申请日：2007-07-03

    申请人： Dae-Yong Kim ,  Jong-Ho Yun ,  Hyun-Su Kim ,  Eun-Ji Jung ,  Eun-Ok Lee

    发明人： Dae-Yong Kim ,  Jong-Ho Yun ,  Hyun-Su Kim ,  Eun-Ji Jung ,  Eun-Ok Lee

    IPC分类号： H01L21/768

    CPC分类号： H01L21/28518 ,  H01L21/76843 ,  H01L21/76855

    摘要： A method of forming an ohmic contact layer including forming an insulation layer pattern on a substrate, the insulation pattern layer having an opening selectively exposing a silicon bearing layer, forming a metal layer on the exposed silicon bearing layer using an electrode-less plating process, and forming a metal silicide layer from the silicon bearing layer and the metal layer using a silicidation process. Also, a method of forming metal wiring in a semiconductor device using the foregoing method of forming an ohmic contact layer.

    摘要翻译： 一种形成欧姆接触层的方法，包括在基板上形成绝缘层图案，所述绝缘图案层具有选择性地暴露含硅层的开口，使用无电极电镀工艺在暴露的硅轴承层上形成金属层， 以及使用硅化法从所述硅轴承层和所述金属层形成金属硅化物层。 另外，使用上述形成欧姆接触层的方法在半导体器件中形成金属布线的方法。

    Method forming ohmic contact layer and metal wiring in semiconductor device
    9.
    发明授权
    Method forming ohmic contact layer and metal wiring in semiconductor device 有权
    在半导体器件中形成欧姆接触层和金属布线的方法

    公开(公告)号：US07867898B2

    公开(公告)日：2011-01-11

    申请号：US11772953

    申请日：2007-07-03

    申请人： Dae-Yong Kim ,  Jong-Ho Yun ,  Hyun-Su Kim ,  Eun-Ji Jung ,  Eun-Ok Lee

    发明人： Dae-Yong Kim ,  Jong-Ho Yun ,  Hyun-Su Kim ,  Eun-Ji Jung ,  Eun-Ok Lee

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28518 ,  H01L21/76843 ,  H01L21/76855

    摘要： A method of forming an ohmic contact layer including forming an insulation layer pattern on a substrate, the insulation pattern layer having an opening selectively exposing a silicon bearing layer, forming a metal layer on the exposed silicon bearing layer using an electrode-less plating process, and forming a metal silicide layer from the silicon bearing layer and the metal layer using a silicidation process. Also, a method of forming metal wiring in a semiconductor device using the foregoing method of forming an ohmic contact layer.

    摘要翻译： 一种形成欧姆接触层的方法，包括在基板上形成绝缘层图案，所述绝缘图案层具有选择性地暴露含硅层的开口，使用无电极电镀工艺在暴露的硅轴承层上形成金属层， 以及使用硅化法从所述硅轴承层和所述金属层形成金属硅化物层。 另外，使用上述形成欧姆接触层的方法在半导体器件中形成金属布线的方法。