摘要:
A multi-bit programming device and method for a non-volatile memory are provided. In one example embodiment, a multi-bit programming device may include a multi-bit programming unit configured to multi-bit program original multi-bit data to a target memory cell in a memory cell array, and a backup programming unit configured to select backup memory cells in the memory cell array with respect to each bit of the original multi-bit data, and program each bit of the original multi-bit data to a respective one of the selected backup memory cells.
摘要:
A multi-bit programming device and method for a non-volatile memory are provided. In one example embodiment, a multi-bit programming device may include a multi-bit programming unit configured to multi-bit program original multi-bit data to a target memory cell in a memory cell array, and a backup programming unit configured to select backup memory cells in the memory cell array with respect to each bit of the original multi-bit data, and program each bit of the original multi-bit data to a respective one of the selected backup memory cells.
摘要:
An Error Control Code (ECC) apparatus applied to a memory of a Multi-Level Cell (MLC) method may include: a bypass control signal generator generating a bypass control signal; and an ECC performing unit that may include at least two ECC decoding blocks, determining whether to bypass a portion of the at least two ECC decoding blocks based on the bypass control signal, and/or performing an ECC decoding. In addition or in the alternative, the ECC performing unit may include at least two ECC encoding blocks, determining whether to bypass a portion of the at least two ECC encoding blocks based on the bypass control signal, and/or performing an ECC encoding. An ECC method applied to a memory of a MLC method and a computer-readable recording medium storing a program for implementing an EEC method applied to a memory of a MLC method are also disclose.
摘要:
An Error Control Code (ECC) apparatus may include a control signal generator that generates an ECC control signal based on channel information. The ECC apparatus also may include: a plurality of ECC encoding controllers that output data respectively inputted via storage elements corresponding to the ECC control signal; and/or an encoding unit that encodes, using a plurality of data outputted from the plurality of ECC encoding controllers, encoding input data into a number of subdata corresponding to the ECC control signal. In addition or in the alternative, the ECC apparatus may include: a plurality of ECC decoding controllers that output data respectively inputted via the storage elements corresponding to the ECC control signal; and/or a decoding unit that decodes, using a plurality of data outputted from the plurality of ECC decoding controllers, a number of decoding input data corresponding to the ECC control signal into one piece of output data.
摘要:
Provided are a device for reading memory data and a method using the same. The device for reading memory data comprises a memory cell which stores multi-bit information, an information detection unit which detects as much bit information as a predetermined number of bits from among multi-bit information, a source-line voltage control unit which controls a source-line voltage of the memory cell based on the detected bit information from the information detection unit, and a remaining bit information read unit which reads remaining bit information stored in the memory cell by using the controlled source-line voltage.
摘要:
Provided are a device for reading memory data and a method using the same. The device for reading memory data comprises a memory cell which stores multi-bit information, an information detection unit which detects as much bit information as a predetermined number of bits from among multi-bit information, a source-line voltage control unit which controls a source-line voltage of the memory cell based on the detected bit information from the information detection unit, and a remaining bit information read unit which reads remaining bit information stored in the memory cell by using the controlled source-line voltage.
摘要:
A code encoding apparatus includes a delay circuit and a code generator. The delay circuit generates delayed information based on p-bit input information received in parallel. The delayed information is generated according to a clock. The code generator generates n·p-bit code based on at least one of the input information and the delayed information, where n is a rational number.
摘要:
A code encoding apparatus includes a delay circuit and a code generator. The delay circuit generates delayed information based on p-bit input information received in parallel. The delayed information is generated according to a clock. The code generator generates n·p-bit code based on at least one of the input information and the delayed information, where n is a rational number.
摘要:
A memory system includes: a memory controller including an error correction decoder. The error correction decoder includes: a demultiplexer adapted to receive data and demultiplex the data into a first set of data and a second set of data; first and second buffer memories for storing the first and second sets of data, respectively; an error detector; an error corrector; and a multiplexer adapted to multiplex the first set of data and the second set of data and to provide the multiplexed data to the error corrector. While the error corrector corrects errors in the first set of data, the error detector detects errors in the second set of data stored in the second buffer memory.
摘要:
A method and an apparatus for programming data of memory cells considering coupling are provided. The method includes: calculating a change of a threshold voltage based on source data of the memory cells; converting source data which will be programmed based on the calculated change of the threshold voltage; and programming the converted source data.