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    Methods of forming half-tone phase-shift masks with reduced susceptiblity to parasitic sputtering
    1.
    发明授权
    Methods of forming half-tone phase-shift masks with reduced susceptiblity to parasitic sputtering 失效
    形成对寄生溅射具有降低的敏感性的半色调相移掩模的方法

    公开(公告)号：US5741613A

    公开(公告)日：1998-04-21

    申请号：US713953

    申请日：1996-09-13

    Applicant: Seong-yong Moon ,  Jong-wook Kye ,  Sung-gi Kim ,  Sung-chul Lim ,  In-kyun Shin

    Inventor： Seong-yong Moon ,  Jong-wook Kye ,  Sung-gi Kim ,  Sung-chul Lim ,  In-kyun Shin

    IPC: G03F1/32 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F9/00

    CPC classification number: G03F1/32

    Abstract: Methods of forming half-tone phase-shift masks include the steps of forming a series of layers on a face of a transparent substrate such as quartz. These layers include a phase-shift layer of MoSiON, a layer of opaque material (e.g., chrome) for blocking light on the phase-shift layer and a photoresist layer on the layer of opaque material. The photoresist layer is then patterned to define a mask having openings therein which expose the layer of opaque material. The layer of opaque material is then patterned using a wet etchant, to expose portions of the phase-shift layer. The patterned photoresist layer is then stripped and a cleaning step is then performed to remove residual defects and marks from the patterned layer of opaque material. The patterned layer of opaque material is then used as a mask during the step of anisotropically dry etching the phase-shift layer using a gas containing CF.sub.4 and O.sub.2, but not CHF.sub.3. The use of a gas containing CF.sub.4 and O.sub.2 inhibits parasitic sputtering of chrome from the patterned layer of opaque material onto the exposed portions of the face of the transparent substrate, during the dry etching step. In contrast, the use of a gas containing CHF.sub.3 and O.sub.2 during dry etching of the phase-shift layer may cause the formation of parasitic defects containing chrome on the face of the transparent substrate. These parasitic defects typically cause a reduction in yield when the phase-shift mask is used in the formation of integrated circuits.

    Abstract translation: 形成半色调相移掩模的方法包括在诸如石英的透明基板的表面上形成一系列层的步骤。 这些层包括MoSiON的相移层，用于阻挡相移层上的光的不透明材料层（例如，铬）和不透明材料层上的光致抗蚀剂层。 然后将光致抗蚀剂层图案化以限定其中具有开口的掩模，其暴露不透明材料层。 然后使用湿蚀刻剂将不透明材料层图案化，以暴露部分相移层。 然后剥离图案化的光致抗蚀剂层，然后执行清洁步骤以从不透明材料的图案化层去除残留的缺陷和痕迹。 然后在使用含有CF4和O2而不是CHF3的气体进行各向异性干蚀刻相移层的步骤期间，将不透明材料的图案化层用作掩模。 在干蚀刻步骤期间，使用含有CF 4和O 2的气体抑制铬从不透明材料的图案化层的阳极溅射到透明基板的表面的暴露部分上。 相反，在相移层的干蚀刻期间使用含有CHF 3和O 2的气体可能导致在透明基底的表面上形成含有铬的寄生缺陷。 当在形成集成电路中使用相移掩模时，这些寄生缺陷通常导致产量的降低。

    Photolithography masks including phase-shifting layers and related methods and structures
    2.
    发明授权
    Photolithography masks including phase-shifting layers and related methods and structures 失效
    光刻掩模包括相移层及相关方法和结构

    公开(公告)号：US5804338A

    公开(公告)日：1998-09-08

    申请号：US742247

    申请日：1996-10-31

    Applicant: Sung-chul Lim ,  Seong-yong Moon

    Inventor： Sung-chul Lim ,  Seong-yong Moon

    IPC: G03F7/11 ,  G03F1/00 ,  G03F1/32 ,  H01L21/027 ,  G03F9/00

    CPC classification number: G03F1/32 ,  G03F1/70

    Abstract: A phase-shifting mask is provided for irradiating a microelectronic wafer having first and second wafer regions wherein the first wafer region has a large step difference relative to the second wafer region. The phase-shifting mask includes a substrate which transmits light therethrough and a patterned layer of a phase shifting material which shifts a phase of light transmitted by the substrate. The phase-shifting mask also includes a layer which controls the transmissivity of light through the phase-shifting mask so that a transmissivity of light through a first mask region is small relative to a transmissivity of light through a second mask region wherein the first mask region corresponds to the first wafer region and the second mask region corresponds to the second wafer region. Related masks and structures are also discussed.

    Abstract translation: 提供一种用于照射具有第一和第二晶片区域的微电子晶片的相移掩模，其中第一晶片区域相对于第二晶片区域具有大的阶梯差。 相移掩模包括透射光的衬底和移动由衬底透射的光的相移材料的图案化层。 相移掩模还包括控制通过相移掩模的光的透射率的层，使得通过第一掩模区的光的透射率相对于通过第二掩模区的光的透射率小，其中第一掩模区 对应于第一晶片区域，第二掩模区域对应于第二晶片区域。 还讨论了相关的掩模和结构。

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