公开(公告)号：US06296975B1

公开(公告)日：2001-10-02

申请号：US09426762

申请日：1999-10-26

Applicant: Seong-yong Moon ,  Yong-hoon Kim ,  Kwang-soo No

Inventor： Seong-yong Moon ,  Yong-hoon Kim ,  Kwang-soo No

IPC: G03F900

CPC classification number: G03F1/54

Abstract: A photo mask of a semiconductor device includes a transmission preventing layer formed of a molybdenum alloy, which is a solid solution of a metal atom such as chrome in molybdenum, on a light transmitting substrate. Also, the molybdenum alloy may be a molybdenum vanadium alloy, a molybdenum niobium alloy, a molybdenum tantalum alloy, or a molybdenum tungsten alloy, which is a solid solution of vanadium, niobium, tantalum, or tungsten in molybdenum, respectively. The photo mask provides high resolution during a photolithography process by obtaining a thinner transmission preventing layer.

Abstract translation: 半导体器件的光掩模包括由钼合金形成的防透光层，其是钼等金属原子的固溶体在透光性基板上。 此外，钼合金可以分别是钼中的钒，铌，钽或钨的固溶体的钼钒合金，钼铌合金，钼钽合金或钼钨合金。 光掩模通过获得较薄的防止传播层在光刻过程中提供高分辨率。

公开(公告)号：US5853921A

公开(公告)日：1998-12-29

申请号：US905792

申请日：1997-07-28

Applicant: Seong-yong Moon ,  In-kyun Shin ,  Ho-young Kang

Inventor： Seong-yong Moon ,  In-kyun Shin ,  Ho-young Kang

IPC: G03F1/30 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F9/00

CPC classification number: G03F1/30

Abstract: A phase shift mask is fabricated by forming a radiation blocking layer on a phase shift mask substrate and forming a photoresist layer on the radiation blocking layer. First portions of the photoresist layer are exposed at a first exposure dose. Second portions of the photoresist layer are exposed at a second exposure dose that is greater than the first exposure dose, such that the second portions of the photoresist layer are wider than the first portions of the photoresist layer. The radiation blocking layer is etched using the photoresist layer as an etch mask, to thereby produce first apertures in the radiation blocking layer beneath the first portions of the photoresist layer and second apertures in the radiation blocking layer which are wider than the first apertures, beneath the second portions of the photoresist layer. The phase shift mask substrate is then etched beneath the second apertures. The first and second exposures are preferably performed by exposing the photoresist layer to electron beams of first and second exposure doses. The first and second portions of the photoresist layer may be overlapping or nonoverlapping. The first and second exposure doses may be multiple exposure doses which cumulatively provide the first and second exposure doses.

Abstract translation: 通过在相移掩模基板上形成辐射阻挡层并在辐射阻挡层上形成光致抗蚀剂层来制造相移掩模。 光致抗蚀剂层的第一部分以第一曝光剂量曝光。 光致抗蚀剂层的第二部分以比第一曝光剂量大的第二曝光剂量曝光，使得光致抗蚀剂层的第二部分比光致抗蚀剂层的第一部分宽。 使用光致抗蚀剂层作为蚀刻掩模蚀刻辐射阻挡层，从而在光致抗蚀剂层的第一部分下方的辐射阻挡层和辐射阻挡层中的第二孔之下产生比第一孔更宽的第一孔，下面 光致抗蚀剂层的第二部分。 然后在第二孔下方蚀刻相移掩模衬底。 第一和第二曝光优选通过将光致抗蚀剂层暴露于第一和第二曝光剂量的电子束来进行。 光致抗蚀剂层的第一和第二部分可以是重叠的或不重叠的。 第一和第二暴露剂量可以是累积提供第一和第二暴露剂量的多次暴露剂量。

公开(公告)号：US5741613A

公开(公告)日：1998-04-21

申请号：US713953

申请日：1996-09-13

Applicant: Seong-yong Moon ,  Jong-wook Kye ,  Sung-gi Kim ,  Sung-chul Lim ,  In-kyun Shin

Inventor： Seong-yong Moon ,  Jong-wook Kye ,  Sung-gi Kim ,  Sung-chul Lim ,  In-kyun Shin

IPC: G03F1/32 ,  G03F1/68 ,  G03F1/80 ,  H01L21/027 ,  G03F9/00

CPC classification number: G03F1/32

Abstract: Methods of forming half-tone phase-shift masks include the steps of forming a series of layers on a face of a transparent substrate such as quartz. These layers include a phase-shift layer of MoSiON, a layer of opaque material (e.g., chrome) for blocking light on the phase-shift layer and a photoresist layer on the layer of opaque material. The photoresist layer is then patterned to define a mask having openings therein which expose the layer of opaque material. The layer of opaque material is then patterned using a wet etchant, to expose portions of the phase-shift layer. The patterned photoresist layer is then stripped and a cleaning step is then performed to remove residual defects and marks from the patterned layer of opaque material. The patterned layer of opaque material is then used as a mask during the step of anisotropically dry etching the phase-shift layer using a gas containing CF.sub.4 and O.sub.2, but not CHF.sub.3. The use of a gas containing CF.sub.4 and O.sub.2 inhibits parasitic sputtering of chrome from the patterned layer of opaque material onto the exposed portions of the face of the transparent substrate, during the dry etching step. In contrast, the use of a gas containing CHF.sub.3 and O.sub.2 during dry etching of the phase-shift layer may cause the formation of parasitic defects containing chrome on the face of the transparent substrate. These parasitic defects typically cause a reduction in yield when the phase-shift mask is used in the formation of integrated circuits.

Abstract translation: 形成半色调相移掩模的方法包括在诸如石英的透明基板的表面上形成一系列层的步骤。 这些层包括MoSiON的相移层，用于阻挡相移层上的光的不透明材料层（例如，铬）和不透明材料层上的光致抗蚀剂层。 然后将光致抗蚀剂层图案化以限定其中具有开口的掩模，其暴露不透明材料层。 然后使用湿蚀刻剂将不透明材料层图案化，以暴露部分相移层。 然后剥离图案化的光致抗蚀剂层，然后执行清洁步骤以从不透明材料的图案化层去除残留的缺陷和痕迹。 然后在使用含有CF4和O2而不是CHF3的气体进行各向异性干蚀刻相移层的步骤期间，将不透明材料的图案化层用作掩模。 在干蚀刻步骤期间，使用含有CF 4和O 2的气体抑制铬从不透明材料的图案化层的阳极溅射到透明基板的表面的暴露部分上。 相反，在相移层的干蚀刻期间使用含有CHF 3和O 2的气体可能导致在透明基底的表面上形成含有铬的寄生缺陷。 当在形成集成电路中使用相移掩模时，这些寄生缺陷通常导致产量的降低。

公开(公告)号：US20060066878A1

公开(公告)日：2006-03-30

申请号：US11151742

申请日：2005-06-13

Applicant: Dong-Gun Lee ,  Seong-Woon Choi ,  Sang-Yong Yu ,  Seong-Yong Moon ,  Byung- Gook Kim

Inventor： Dong-Gun Lee ,  Seong-Woon Choi ,  Sang-Yong Yu ,  Seong-Yong Moon ,  Byung- Gook Kim

IPC: G01B11/04

CPC classification number: G01B11/24 ,  G03F1/84

Abstract: A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.

Abstract translation: 用于测量光掩模尺寸的系统包括发射具有波长的测量光的光源，用于接收测量光的透射检测器，其上放置有电路图案的光掩模的级，该级设置在光源和传输器之间 检测器和具有尺寸决定算法的控制器，以根据所接收的测量光的光谱特性来确定电路图案的尺寸，所述控制器连接到所述传输检测器。

公开(公告)号：US20060051684A1

公开(公告)日：2006-03-09

申请号：US11145985

申请日：2005-06-07

Applicant: Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

Inventor： Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

IPC: G06F17/50 ,  G03C5/00 ,  G03F1/00

CPC classification number: G03F1/36

Abstract: A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.

公开(公告)号：US06566275B1

公开(公告)日：2003-05-20

申请号：US09702523

申请日：2000-10-31

Applicant: Seong-yong Moon

Inventor： Seong-yong Moon

IPC: H01L21302

CPC classification number: H01L21/67051 ,  G03F1/68 ,  G03F7/3021

Abstract: A spinner apparatus for manufacturing a photomask, performing a developing process for forming a resist pattern on a specific substrate, and performing an etching process in which a resist pattern is used as an etching mask are provided. A plurality of supply nozzles for supplying a developing solution or an etching solution are provided above the substrate on which processes will be performed and processing conditions such as the temperature and flux of the chemicals supplied from each supply nozzle are independently controlled. Accordingly, it is possible to control the deviation of the critical dimensions of the device.

Abstract translation: 提供一种用于制造光掩模的旋转装置，执行用于在特定基板上形成抗蚀剂图案的显影处理，并且执行其中使用抗蚀剂图案作为蚀刻掩模的蚀刻工艺。 在进行处理的基板的上方设置有用于供给显影液或蚀刻溶液的多个供给喷嘴，并且分别控制从各供给喷嘴供给的化学品的温度和通量等处理条件。 因此，可以控制装置的临界尺寸的偏差。

公开(公告)号：US5804338A

公开(公告)日：1998-09-08

申请号：US742247

申请日：1996-10-31

Applicant: Sung-chul Lim ,  Seong-yong Moon

Inventor： Sung-chul Lim ,  Seong-yong Moon

IPC: G03F7/11 ,  G03F1/00 ,  G03F1/32 ,  H01L21/027 ,  G03F9/00

CPC classification number: G03F1/32 ,  G03F1/70

Abstract: A phase-shifting mask is provided for irradiating a microelectronic wafer having first and second wafer regions wherein the first wafer region has a large step difference relative to the second wafer region. The phase-shifting mask includes a substrate which transmits light therethrough and a patterned layer of a phase shifting material which shifts a phase of light transmitted by the substrate. The phase-shifting mask also includes a layer which controls the transmissivity of light through the phase-shifting mask so that a transmissivity of light through a first mask region is small relative to a transmissivity of light through a second mask region wherein the first mask region corresponds to the first wafer region and the second mask region corresponds to the second wafer region. Related masks and structures are also discussed.

Abstract translation: 提供一种用于照射具有第一和第二晶片区域的微电子晶片的相移掩模，其中第一晶片区域相对于第二晶片区域具有大的阶梯差。 相移掩模包括透射光的衬底和移动由衬底透射的光的相移材料的图案化层。 相移掩模还包括控制通过相移掩模的光的透射率的层，使得通过第一掩模区的光的透射率相对于通过第二掩模区的光的透射率小，其中第一掩模区 对应于第一晶片区域，第二掩模区域对应于第二晶片区域。 还讨论了相关的掩模和结构。

公开(公告)号：US07560198B2

公开(公告)日：2009-07-14

申请号：US11145985

申请日：2005-06-07

Applicant: Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

Inventor： Il-Yong Jang ,  Seong-Woon Choi ,  Seong-Yong Moon ,  Jeong-Yun Lee ,  Sung-Hoon Jang

IPC: G03F1/00

CPC classification number: G03F1/36

Abstract: A photo-mask has a main mask pattern in a main region, a density correcting pattern in a peripheral region, and an exposure blocking pattern interposed between the main mask pattern and density correcting pattern. The exposure blocking pattern is configured to prevent the density correcting pattern from being transcribed to a wafer. The photo-mask is made by providing mask substrate on which a mask layer and a photoresist layer are disposed, providing design data that specifies at least the main mask pattern, and using the design data to derive exposure data that controls the exposure of the photoresist layer. The exposure data includes information that specifies the exposure blocking pattern, the portion of the peripheral region to be occupied by the density correcting pattern, and the pattern density of that portion of the peripheral region to be occupied by the density correcting pattern.

Abstract translation: 光掩模在主区域中具有主掩模图案，在周边区域中具有浓度校正图案，以及插入在主掩模图案和密度校正图案之间的曝光阻挡图案。 曝光阻挡图案被配置为防止将密度校正图案转录到晶片。 光掩模是通过提供其上设置有掩模层和光致抗蚀剂层的掩模基板制成的，提供至少指定主掩模图案的设计数据，并且使用该设计数据来导出控制光致抗蚀剂曝光的曝光数据 层。 曝光数据包括指定曝光阻挡图案的信息，由密度校正图案占据的外围区域的部分以及由密度校正图案占据的外围区域的那部分的图案密度。

公开(公告)号：US07369254B2

公开(公告)日：2008-05-06

申请号：US11151742

申请日：2005-06-13

Applicant: Dong-Gun Lee ,  Seong-Woon Choi ,  Sang-Yong Yu ,  Seong-Yong Moon ,  Byung-Gook Kim

Inventor： Dong-Gun Lee ,  Seong-Woon Choi ,  Sang-Yong Yu ,  Seong-Yong Moon ,  Byung-Gook Kim

IPC: G01N21/00

CPC classification number: G01B11/24 ,  G03F1/84

Abstract: A system for measuring dimension of photomasks comprises a light source emitting measuring light having a wavelength, a transmission detector for receiving the measuring light, a stage on which a photomask having circuit patterns is placed, the stage being disposed between the light source and the transmission detector, and a controller having a dimension-deciding algorithm to determine a dimension of the circuit patterns from a spectroscopic characteristic of the received measuring light, the controller being connected to the transmission detector.

Abstract translation: 用于测量光掩模尺寸的系统包括发射具有波长的测量光的光源，用于接收测量光的透射检测器，放置有电路图案的光掩模的级，该级设置在光源和传输器之间 检测器和具有尺寸决定算法的控制器，以根据所接收的测量光的光谱特性来确定电路图案的尺寸，所述控制器连接到所述传输检测器。

公开(公告)号：US20050140988A1

公开(公告)日：2005-06-30

申请号：US10919367

申请日：2004-08-17

Applicant: Dong-gun Lee ,  Seong-woon Choi ,  Seong-yong Moon ,  Byung-gook Kim ,  Min-ah Kim

Inventor： Dong-gun Lee ,  Seong-woon Choi ,  Seong-yong Moon ,  Byung-gook Kim ,  Min-ah Kim

IPC: H01L21/66 ,  G01B11/02 ,  G01B11/14 ,  G03F7/20

CPC classification number: G03F7/70625 ,  G01B11/02

Abstract: An OCD measurement equipment, including a tunable laser system, and a method of measuring the CD of patterns formed on a substrate. A light source optical system emits light which wavelength changes over time. A projector optical system projects the light emitted from the light source optical system on the substrate. A substrate support unit supports the substrate. An image relay optical system relays light reflected by the substrate. An image detection optical system detects the light relayed by the image relay optical system using a detector which detects the spatial distribution of the light.

Abstract translation: 包括可调谐激光系统的OCD测量设备以及测量形成在基板上的图案的CD的方法。 光源光学系统发射波长随时间变化的光。 投影仪光学系统将从光源光学系统发射的光投影到基板上。 基板支撑单元支撑基板。 图像中继光学系统中继由基板反射的光。 图像检测光学系统使用检测光的空间分布的检测器来检测由图像中继光学系统中继的光。