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公开(公告)号：US07034393B2
公开(公告)日：2006-04-25
申请号：US10737231
申请日：2003-12-15
CPC分类号： B81B7/007 , B81C2203/019 , H01L2224/16225 , Y10S257/924
摘要： An apparatus has first and second wafers, and a conductive rim between the first and second wafers. The conductive rim electrically and mechanically connects the first and second wafers. In addition, the conductive rim and second wafer at least in part seal an area on the surface of the first wafer.
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公开(公告)号：US06956274B2
公开(公告)日：2005-10-18
申请号：US10044009
申请日：2002-01-11
IPC分类号： B81B7/00 , H01L27/095
CPC分类号： B81B7/0006
摘要： A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack comprises a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.
摘要翻译： 提供金属化堆叠用作集成MEMS器件中的接触结构。 金属化堆叠包括形成在顶部形成有铂层的钛 - 钨粘合和阻挡层。 铂特征是通过在氩气中溅射蚀刻铂，然后使用氧化物硬掩模在王水中进行湿式蚀刻而形成的。 或者，通过用光致抗蚀剂掩模的单等离子体蚀刻工艺顺序地沉积钛 - 钨和铂层并图案化。
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公开(公告)号：US06878626B1
公开(公告)日：2005-04-12
申请号：US10325091
申请日：2002-12-20
CPC分类号： B81B7/0006
摘要： A metallization stack is provided for use as a contact structure in an integrated MEMS device. The metallization stack includes a titanium-tungsten adhesion and barrier layer formed with a platinum layer formed on top. The platinum feature is formed by sputter etching the platinum in argon, followed by a wet etch in aqua regia using an oxide hardmask. Alternatively, the titanium-tungsten and platinum layers are deposited sequentially and patterned by a single plasma etch process with a photoresist mask.
摘要翻译： 提供金属化堆叠用作集成MEMS器件中的接触结构。 金属化堆叠包括形成在顶部形成有铂层的钛 - 钨粘合和阻挡层。 铂特征是通过在氩气中溅射蚀刻铂，然后使用氧化物硬掩模在王水中进行湿式蚀刻而形成的。 或者，通过用光致抗蚀剂掩模的单等离子体蚀刻工艺顺序地沉积钛 - 钨和铂层并图案化。
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公开(公告)号：US06964894B2
公开(公告)日：2005-11-15
申请号：US10601980
申请日：2003-06-23
IPC分类号： B81B3/00 , B81B7/00 , B81C1/00 , H01G20060101 , H01L21/8238 , H01L27/14
CPC分类号： B81C1/00238
摘要： A method of forming a MEMS device produces a device layer wafer having a pre-formed conductive pathway before coupling it with a handle wafer. To that end, the method produces the noted device layer wafer by 1) providing a material layer, 2) coupling a conductor to the material layer, and 3) forming at least two conductive paths through at least a portion of the material layer to the conductor. The method then provides the noted handle wafer, and couples the device layer wafer to the handle wafer. The wafers are coupled so that the conductor is contained between the material layer and the handle wafer.
摘要翻译： 形成MEMS器件的方法在将其与处理晶片连接之前产生具有预先形成的导电通路的器件层晶片。 为此，该方法通过以下方式产生所提到的器件层晶片：1）提供材料层，2）将导体耦合到材料层，以及3）形成至少两个导电路径，穿过至少一部分材料层到 导体。 该方法然后提供所述处理晶片，并将器件层晶片耦合到处理晶片。 晶片被耦合，使得导体被容纳在材料层和处理晶片之间。
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公开(公告)号：US07906359B2
公开(公告)日：2011-03-15
申请号：US10670673
申请日：2003-09-25
申请人： Bruce K. Wachtmann
发明人： Bruce K. Wachtmann
IPC分类号： H01L21/00
CPC分类号： G01C19/5719 , B81B7/0006 , G01P15/08 , G01P15/0802
摘要： A method of forming a surface micromachined MEMS device applies an insulator to a substrate, and then deposits a conductive path on the insulator. The conductive path is capable of transmitting an electronic signal between two points on the MEMS device. The insulator electrically isolates the conductive path from the substrate. The MEMS device illustratively is free of semiconductor junctions formed by the substrate and the conductive path.
摘要翻译： 形成表面微加工MEMS器件的方法将绝缘体施加到衬底，然后在绝缘体上沉积导电路径。 导电路径能够在MEMS器件上的两个点之间传输电子信号。 绝缘体将导电路径与衬底电隔离。 示例性地，MEMS器件没有由衬底和导电路径形成的半导体结。
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公开(公告)号：US20070207562A1
公开(公告)日：2007-09-06
申请号：US11681931
申请日：2007-03-05
申请人： Bruce K. Wachtmann
发明人： Bruce K. Wachtmann
IPC分类号： H01L21/00
CPC分类号： B81C1/00476
摘要： A method of forming a micromachined device embeds a first material within a sacrificial material, and then removes such first material to form a channel through the sacrificial material. The method then directs a sacrificial material removal fluid through the channel. The sacrificial material removal fluid removes at least a portion of the sacrificial material.
摘要翻译： 形成微加工装置的方法将第一材料嵌入牺牲材料内，然后去除这种第一材料以形成通过牺牲材料的通道。 然后，该方法将牺牲材料去除流体引导通过通道。 牺牲材料去除流体去除牺牲材料的至少一部分。
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