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43 条记录 (耗时 0.032 秒)

    Heater for manufacturing a crystal
    1.
    发明授权
    Heater for manufacturing a crystal 有权
    加热器制造水晶

    公开(公告)号：US07201801B2

    公开(公告)日：2007-04-10

    申请号：US10503721

    申请日：2003-09-08

    申请人： Susumu Sonokawa ,  Ryoji Hoshi ,  Wataru Sato ,  Tomohiko Ohta

    发明人： Susumu Sonokawa ,  Ryoji Hoshi ,  Wataru Sato ,  Tomohiko Ohta

    IPC分类号： C30B35/00

    CPC分类号： C30B15/30 ,  C30B15/14 ,  C30B30/04 ,  C30B35/00 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

    摘要： The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.

    摘要翻译： 本发明提供了一种通过切克劳斯基法制造晶体的加热器，其至少包括通过电阻加热供给电流的端子部分和发热部分，并且被布置成围绕包含原料熔体的坩埚，其中加热器具有 在晶体制造期间在使用时在变形后对原料熔体均匀发热分布。 因此，在晶体制造时，由于加热器的发热部的形状的变形，能够防止因原料熔融体的不均匀温度引起的单晶化和不稳定的晶体质量的阻碍。

    Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal
    3.
    发明授权
    Apparatus and method for the uniform distribution of crystal defects upon a silicon single crystal 失效
    在硅单晶上均匀分布晶体缺陷的装置和方法

    公开(公告)号：US5704973A

    公开(公告)日：1998-01-06

    申请号：US666654

    申请日：1996-06-18

    申请人： Masahiro Sakurada ,  Wataru Sato ,  Tomohiko Ohta

    发明人： Masahiro Sakurada ,  Wataru Sato ,  Tomohiko Ohta

    IPC分类号： C30B15/00 ,  C30B15/20 ,  C30B29/06 ,  C30B33/02 ,  H01L21/208

    CPC分类号： C30B29/06 ,  C30B15/00 ,  Y10T117/1032

    摘要： Proposed is an improvement in the method and single crystal growing chamber for the preparation of a single crystal rod of silicon by the Czochralski method, according to which the distance between the surface of the melt of silicon contained in a crucible and the lower surface of the top wall of the crystal growing chamber is equal to or larger than the diameter of the crucible and the heat-insulating cylinder surrounding the crucible containing the melt of silicon and the heater has such a height as to reach the lower surface of the top wall of the chamber so as to keep the single crystal rod under growing is kept at a temperature not lower than 700.degree. C. until reaching the lower surface of the top wall of the chamber thereby decreasing the density of the crystal defects of BMD type in the seed end of the single crystal rod as grown so that the uniformity in the distribution of BMD density is increased throughout the single crystal rod.

    摘要翻译： 提出了通过切克劳斯基法（Czochralski method）制备单晶硅的方法和单晶生长室的改进，根据该方法，坩埚中包含的硅熔体表面与坩埚的下表面之间的距离 晶体生长室的顶壁等于或大于坩埚的直径，并且包含硅和加热器的熔体的坩埚周围的隔热圆筒具有如下高度：到达顶壁的下表面 保持单晶棒生长的室保持在不低于700℃的温度，直到到达室的顶壁的下表面，从而降低种子中BMD型晶体缺陷的密度 生长的单晶棒的端部，使得在整个单晶棒中BMD密度分布的均匀性增加。

    AIR HEAT EXCHANGER
    7.
    发明申请
    AIR HEAT EXCHANGER 有权
    空气热交换器

    公开(公告)号：US20150211781A1

    公开(公告)日：2015-07-30

    申请号：US14405408

    申请日：2012-06-07

    申请人： Wataru Sato ,  Shigeyuki Sasaki

    发明人： Wataru Sato ,  Shigeyuki Sasaki

    IPC分类号： F25D21/14

    CPC分类号： F25D21/14 ,  F25B39/02 ,  F28D1/05383 ,  F28D2021/0071 ,  F28F1/128 ,  F28F1/325 ,  F28F17/005

    摘要： Provided is an air heat exchanger capable of preventing an increase in ventilation resistance and a decrease in heat exchange efficiency due to condensation water generated on surfaces of heat transfer fins, without increasing thermal resistance of flat tubes and the heat transfer fins, and preventing scattering of water droplets downwind from the heat transfer fins. In the air heat exchanger including a plurality of flat tubes 2 and heat transfer fins 5 provided between the flat tubes 2 and on which air is blown, the flat tubes 2 include water draining grooves 4 on side surfaces on which the heat transfer fins 5 are provided and the heat transfer fins 5 include water guiding grooves 6 communicating with the water draining grooves 4. At least a groove wall 40 on the upwind side of an air blowing direction 10 among groove walls forming the water guiding grooves 6 is provided from a position of the upwind side from the water draining grooves 4 to the water draining grooves 4. The water guiding grooves 6 extend toward the water draining grooves 4 along the groove wall 40 on the upwind side and an area of a cross section perpendicular to an extension direction decreases toward the water draining grooves 4.

    摘要翻译： 提供一种空气热交换器，其能够防止由于传热翅片表面产生的冷凝水导致的通风阻力增加和热交换效率降低，而不增加扁平管和传热翅片的热阻，并且防止散热 水滴从传热翅片向下风向。 在包括设置在扁平管2之间的多个扁平管2和传热翅片5的空气热交换器中，扁平管2包括在其上具有传热翅片5的侧表面上的排水槽4 传热翅片5包括与排水槽4连通的导水槽6.至少在形成导水槽6的槽壁中的吹风方向10的上风侧的槽壁40从位置 从排水沟4向排水槽4的上风侧。导水槽6沿着上下风向侧的槽壁40向排水槽4延伸，与延伸方向垂直的截面的区域 朝向排水槽4减少。

    Drying furnace and drying method
    8.
    发明授权
    Drying furnace and drying method 有权
    干燥炉和干燥方法

    公开(公告)号：US08997374B2

    公开(公告)日：2015-04-07

    申请号：US13699520

    申请日：2011-05-24

    申请人： Wataru Sato

    发明人： Wataru Sato

    IPC分类号： F26B3/28 ,  F26B15/16 ,  F26B3/30 ,  B05D3/02

    CPC分类号： F26B3/283 ,  B05D3/0263 ,  B05D3/0272 ,  F26B3/30 ,  F26B15/16 ,  F26B2210/12

    摘要： A drying furnace (20) for drying an object (11) by hot air is provided with a heater (36, 38, 43, 45) that applies radiant heat to a hard-heating region (35, 42) having a larger heat capacity than the other region (37, 44) in the object (11) so as to heat the hard-heating region (35, 42) to a temperature approximate to a temperature of the other region (37, 44).

    摘要翻译： 用热空气对物体（11）进行干燥的干燥炉（20）具有向具有较大热容量的硬质加热区域（35,42）施加辐射热的加热器（36,38,43,45） 使得加热区域（35,42）加热到接近其他区域（37,44）的温度的温度。