公开(公告)号：US07201801B2

公开(公告)日：2007-04-10

申请号：US10503721

申请日：2003-09-08

申请人： Susumu Sonokawa ,  Ryoji Hoshi ,  Wataru Sato ,  Tomohiko Ohta

发明人： Susumu Sonokawa ,  Ryoji Hoshi ,  Wataru Sato ,  Tomohiko Ohta

IPC分类号： C30B35/00

CPC分类号： C30B15/30 ,  C30B15/14 ,  C30B30/04 ,  C30B35/00 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.

摘要翻译： 本发明提供了一种通过切克劳斯基法制造晶体的加热器，其至少包括通过电阻加热供给电流的端子部分和发热部分，并且被布置成围绕包含原料熔体的坩埚，其中加热器具有 在晶体制造期间在使用时在变形后对原料熔体均匀发热分布。 因此，在晶体制造时，由于加热器的发热部的形状的变形，能够防止因原料熔融体的不均匀温度引起的单晶化和不稳定的晶体质量的阻碍。

公开(公告)号：US20050081779A1

公开(公告)日：2005-04-21

申请号：US10503721

申请日：2003-09-08

申请人： Susumu Sonokawa ,  Ryoji Hoshi ,  Wataru Sato ,  Tomohiko Ohta

发明人： Susumu Sonokawa ,  Ryoji Hoshi ,  Wataru Sato ,  Tomohiko Ohta

IPC分类号： C30B15/14 ,  C30B29/06 ,  C30B35/00 ,  C30B15/00 ,  C30B13/00 ,  C30B21/04 ,  C30B21/06 ,  C30B27/02 ,  C30B28/08 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/30 ,  C30B15/14 ,  C30B30/04 ,  C30B35/00 ,  Y10S117/90 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： The present invention provides a heater for manufacturing a crystal by the Czochralski method comprising at least terminal portions supplied with current and a heat generating portion by resistance heating, and being arranged so as to surround a crucible containing a raw material melt, wherein the heater has a uniform heat generation distribution to the raw material melt after deformation while in use during crystal manufacture. It is thus possible to prevent hindrance of monocrystallization and unstable crystal quality caused by ununiform temperature in the raw material melt due to deformation of the shape of the heater's heat generating portion while in use during crystal manufacture.

摘要翻译： 本发明提供了一种通过切克劳斯基法制造晶体的加热器，其至少包括通过电阻加热供给电流的端子部分和发热部分，并且被布置成围绕包含原料熔体的坩埚，其中加热器具有 在晶体制造期间在使用时在变形后对原料熔体均匀发热分布。 因此，在晶体制造时，由于加热器的发热部的形状的变形，能够防止因原料熔融体的不均匀温度引起的单晶化和不稳定的晶体质量的阻碍。

公开(公告)号：US06565822B1

公开(公告)日：2003-05-20

申请号：US09646713

申请日：2000-09-21

申请人： Ryoji Hoshi ,  Susumu Sonokawa ,  Masahiro Sakurada ,  Tomohiko Ohta ,  Izumi Fusegawa

发明人： Ryoji Hoshi ,  Susumu Sonokawa ,  Masahiro Sakurada ,  Tomohiko Ohta ,  Izumi Fusegawa

IPC分类号： C09B3326

CPC分类号： C30B29/06 ,  C30B15/203

摘要： An epitaxial silicon wafer, which has no projections having a size of 100 nm or more and a height of 5 nm or more on an epitaxial layer, and a method for producing an epitaxial silicon wafer, wherein a single crystal ingot containing no I-region is grown when a silicon single crystal is grown by the CZ method, and an epitaxial layer is deposited on a silicon wafer sliced from the single crystal ingot and containing no I-region for the entire surface. An epitaxial wafer of high quality with no projection-like surface distortion observed as particles on an epi-layer surface is provided by forming a wafer having no I-region for the entire surface from a single crystal and depositing an epitaxial layer thereon, and a single crystal having no I-region for entire plane is produced with good yield and high productivity, thereby improving productivity of epi-wafers and realizing cost reduction.

摘要翻译： 在外延层上没有尺寸为100nm以上且高度为5nm以上的外延硅晶片和外延硅晶片的制造方法，其中，不含I区域的单晶锭 当通过CZ法生长硅单晶时生长，并且在从单晶锭切片的硅晶片上沉积外延层，并且在整个表面上不含有I区。 通过从单晶形成整个表面没有I区的晶片并在其上沉积外延层来提供高品质的外延晶片，其没有观察到作为外延表面上的颗粒的投射状表面变形， 以良好的产率和高生产率生产不具有整个平面的I区的单晶，从而提高外延片的生产率并实现成本降低。

公开(公告)号：US20100116195A1

公开(公告)日：2010-05-13

申请号：US12450807

申请日：2008-04-18

申请人： Ryoji Hoshi ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Susumu Sonokawa

IPC分类号： C30B15/00

CPC分类号： C30B15/04 ,  C30B29/06

摘要： The present invention provides a method for growing a carbon-doped silicon single crystal that grows a silicon single crystal from a raw material melt in a crucible having carbon added therein by the Czochralski method, wherein an extruded material or a molded material is used as a dopant for adding the carbon to a raw material in the crucible. As a result, there can be provided the method for growing a carbon-doped silicon single crystal, by which the carbon can be easily doped in the silicon single crystal at low cost and a carbon concentration in the silicon single crystal can be accurately controlled in a silicon single crystal pulling up process by the Czochralski method.

摘要翻译： 本发明提供了一种用于生长碳掺杂硅单晶的方法，该碳掺杂硅单晶通过Czochralski法在其中添加有碳的坩埚中从原料熔体生长硅单晶，其中使用挤出材料或模塑材料作为 用于将碳添加到坩埚中的原料的掺杂剂。 结果，可以提供生长碳掺杂硅单晶的方法，通过该方法可以以低成本容易地在硅单晶中掺杂碳，并且可以精确地控制硅单晶中的碳浓度 通过Czochralski法提取硅单晶提取工艺。

公开(公告)号：US07204881B2

公开(公告)日：2007-04-17

申请号：US10520099

申请日：2003-07-08

申请人： Ryoji Hoshi ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Susumu Sonokawa

IPC分类号： C30B15/04

CPC分类号： H01L21/3225 ,  C30B15/203 ,  C30B15/206 ,  C30B25/20 ,  C30B29/06

摘要： There are disclosed a silicon wafer for epitaxial growth wherein the wafer is produced by slicing a silicon single crystal grown with doping nitrogen according to the Czochralski method (CZ method) in the region where at least the center of the wafer becomes V region in which the void type defects are generated, and wherein the number of defects having an opening size of 20 nm or less among the void type defects appearing on the surface of the wafer is 0.02/cm2 or less, and an epitalial wafer wherein an epitaxial layer is formed on the silicon wafer for epitaxial growth. Thereby, there can be produced an epitaxial wafer having a high gettering capability wherein very few SF exist in the epitaxial layer easily at high productivity and at low cost.

摘要翻译： 公开了一种用于外延生长的硅晶片，其中晶片通过在至少晶片的中心变为V区域的区域中根据切克劳斯基法（CZ法）将掺杂氮生长的硅单晶切片而制造，其中 产生空隙型缺陷，其中出现在晶片表面上的空隙型缺陷中开孔尺寸为20nm以下的缺陷数为0.02 / cm 2以下， 其中在硅晶片上形成用于外延生长的外延层。 因此，可以制造出具有高吸杂能力的外延晶片，其中极少的SF以高生产率和低成本容易地在外延层中存在。

公开(公告)号：US09260796B2

公开(公告)日：2016-02-16

申请号：US12448845

申请日：2008-01-10

申请人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

IPC分类号： C30B15/00 ,  C30B15/26 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

CPC分类号： C30B15/26 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

摘要： A method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt with a reference reflector provided at a lower end of the heat insulating member which is located above the surface of the raw material melt when a silicon single crystal is pulled up by a Czochralski method while a magnetic field is applied to the raw material melt in a crucible is disclosed. The method comprises the steps of contacting a projection made of quartz, silicon or carbon with the surface of the raw material melt, the projection being longer that the reference reflector and having a length corresponding to an initial distance; electrically detecting the contact between the projection and the melt surface, and observing an initial location of a mirror image of the reference reflector by a camera when the distance between the lower end surface of the heat insulating member and the surface of the raw material melt has been adjusted so as to be the initial distance, the mirror image being reflected on the surface of the raw material melt; and while pulling the silicon single crystal, measuring a travel distance of the mirror image from the initial location by the camera and calculating the distance between the lower end surface of the heat insulating member and the surface of the raw material melt from the initial travel distance of the mirror image.

摘要翻译： 一种用于测量绝热构件的下端表面与原料熔体表面之间的距离的方法，所述参考反射器设置在位于原料熔体表面上方的绝热构件的下端， 公开了在坩埚中对原料熔体施加磁场的情况下，利用切克劳斯基法（Czochralski method）将硅单晶拉伸。 该方法包括以下步骤：将由石英，硅或碳制成的突起与原料熔体的表面接触，突起比参考反射体更长，并具有与初始距离相对应的长度; 电检测突起和熔体表面之间的接触，并且当绝热构件的下端表面与原料熔体表面之间的距离具有相机时，通过相机观察参考反射体的镜像的初始位置 被调整为初始距离，镜像在原料熔体的表面上反射; 并且在拉动硅单晶的同时，通过照相机测量镜像与初始位置的移动距离，并从初始行进距离计算绝热构件的下端表面与原料熔体的表面之间的距离 的镜像。

公开(公告)号：US07594966B2

公开(公告)日：2009-09-29

申请号：US10573822

申请日：2004-10-19

申请人： Ryoji Hoshi ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Susumu Sonokawa

IPC分类号： C30B15/00 ,  C30B28/10

CPC分类号： C30B15/206 ,  C30B29/06 ,  Y10T117/1068 ,  Y10T117/1072 ,  Y10T117/1088

摘要： A method for producing a single crystal by pulling a single crystal from a raw material melt in a chamber according to the Czochralski method, including pulling a single crystal having a defect-free region, which is outside an OSF region, to occur in a ring shape in the radial direction, and in which interstitial-type and vacancy-type defects do not exist. The pulling of the single crystal is controlled so that an average cooling rate in passing through a temperature region of the melting point of the single crystal to 950° C. is in the range of 0.96° C./min or more, an average cooling rate in passing through a temperature region of 1150° C. to 1080° C. is in the range of 0.88° C./min or more, and an average cooling rate in passing through a temperature region of 1050° C. to 950° C. is in the range of 0.71° C./min or more.

摘要翻译： 根据切克劳斯基方法从腔室中的原料熔体中拉出单晶而制造单晶的方法，包括在OSF区域外拉动具有无缺陷区域的单晶发生在环中 形状在径向方向，并且其中不存在间隙型和空位型缺陷。 控制单晶的拉伸使得通过单晶熔点的温度区域至950℃的平均冷却速度在0.96℃/分钟以上的范围内，平均冷却 通过1150℃至1080℃的温度区域的速率在0.88℃/分钟以上的范围内，通过1050℃至950℃的温度区域的平均冷却速度 C.的范围是0.71℃/分钟以上。

公开(公告)号：US20140103492A1

公开(公告)日：2014-04-17

申请号：US14122356

申请日：2012-05-14

申请人： Izumi Fusegawa ,  Ryoji Hoshi ,  Susumu Sonokawa ,  Hisayuki Saito

发明人： Izumi Fusegawa ,  Ryoji Hoshi ,  Susumu Sonokawa ,  Hisayuki Saito

IPC分类号： H01L21/02 ,  H01L29/34

CPC分类号： H01L21/02024 ,  C30B15/00 ,  C30B15/14 ,  C30B15/20 ,  C30B15/203 ,  C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L21/3221 ,  H01L29/30 ,  H01L29/34

摘要： The present invention provides a method for producing a silicon wafer from a defect-free silicon single crystal grown by a CZ method, the method comprising: preparing a silicon wafer obtained by slicing the defect-free silicon single crystal and subjected to mirror-polishing; then performing a heat treatment step of subjecting the mirror-polished silicon wafer to heat treatment at a temperature of 500° C. or higher but 600° C. or lower for 4 hours or more but 6 hours or less; and performing a repolishing step of repolishing the silicon wafer after the heat treatment step such that a polishing amount becomes 1.5 μm or more. Therefore, it is an object to provide a method by which a silicon wafer can be produced at a high yield, the silicon wafer in which LPDs are reduced to a minimum, the silicon wafer with a low failure-incidence rate in an inspection step and a shipment stage.

摘要翻译： 本发明提供一种通过CZ方法生长的无缺陷硅单晶制造硅晶片的方法，该方法包括：制备通过对无缺陷的硅单晶进行切片并进行镜面抛光获得的硅晶片; 然后进行热处理步骤，使经镜面抛光的硅晶片在500℃以上但600℃以下的温度下进行4小时以上6小时以下的热处理; 并且在热处理步骤之后执行重新抛光硅晶片的重新抛光步骤，使得抛光量变为1.5μm以上。 因此，本发明的目的是提供一种可以以高产率制造硅晶片的方法，将LPD降低到最小的硅晶片，在检查步骤中具有低故障发生率的硅晶片，以及 出货阶段

公开(公告)号：US20060191468A1

公开(公告)日：2006-08-31

申请号：US10550088

申请日：2004-03-30

申请人： Ryoji Hoshi ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Susumu Sonokawa

IPC分类号： C30B15/00 ,  C30B28/10 ,  C30B21/06 ,  C30B27/02 ,  C30B30/04

CPC分类号： C30B29/06 ,  C30B15/20

摘要： A method of producing a single crystal according to Czochralski method comprising the steps of, charging polycrystalline material into a crucible, heating and melting the polycrystalline material by a heater disposed so as to surround the crucible, immersing a seed crystal into the material melt and then pulling the seed crystal to grow a single crystal, wherein in the case of growing a single crystal of which resistivity is controlled by doping with boron, the highest temperature of the crucible is controlled to be 1600° C. or less to grow the single crystal. Thereby, there is provided a method of producing a single crystal in which generation of dislocation is prevented when a single crystal having high gettering property and doped with boron is produced, and thus the single crystal can be produced at high productivity and at low cost.

摘要翻译： 一种根据切克劳斯基法生产单晶的方法，包括以下步骤：将多晶材料装入坩埚中，通过设置在坩埚周围的加热器加热熔化多晶材料，将晶种浸入材料熔体中，然后 拉晶晶以生长单晶，其中在生长通过掺杂硼来控制电阻率的单晶的情况下，将坩埚的最高温度控制在1600℃以下以使单晶生长 。 因此，提供一种制造单晶的方法，当制造具有高吸杂性和掺杂硼的单晶时，可以防止产生位错，从而能够以高生产率和低成本生产单晶。

公开(公告)号：US20100064964A1

公开(公告)日：2010-03-18

申请号：US12448845

申请日：2008-01-10

申请人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

发明人： Ryoji Hoshi ,  Masahiko Urano ,  Susumu Sonokawa

IPC分类号： C30B15/00 ,  G06K9/00

CPC分类号： C30B15/26 ,  C30B15/14 ,  C30B15/20 ,  C30B29/06

摘要： There is provided in the present invention a method for measuring a distance between a lower end surface of a heat insulating member 14 and a surface of a raw material melt 4 when a silicon single crystal is pulled by a Czochralski method while a magnetic field is applied to a raw material melt 4 in a crucible, a reference reflector 18 being located at the lower end of the heat insulating member 14 which is located above the surface of the raw material melt 4, characterized in that the method includes steps of: actually measuring a distance A between the lower end surface of the heat insulating member and the surface of the raw material melt; observing a location R1 of a mirror image of the reference reflector 18 reflected on the surface of the raw material melt by a fixed-point observing apparatus 19; subsequently measuring a travel distance B of the mirror image by the fixed-point observing apparatus 19 while pulling the silicon single crystal; and calculating the distance between the lower end surface of the heat insulating member and the surface of the raw material melt, from an actually measured value A and the travel distance B of the mirror image. Thereby a method for measuring a distance between a lower end surface of a heat insulating member and a surface of a raw material melt which can stably and more accurately measure the distance between the lower end surface of the heat insulating member and the surface of the raw material melt can be provided.

摘要翻译： 本发明提供了一种在施加磁场时，通过切克劳斯基法（Czochralski）拉动硅单晶时，测量绝热构件14的下端表面与原料熔融物4的表面之间的距离的方法 在坩埚中的原料熔融物4上，参考反射体18位于绝热构件14的位于原料熔融体4的表面上方的下端，其特征在于，该方法包括以下步骤：实际测量 隔热构件的下端面与原料熔融体的表面之间的距离A; 通过定点观察装置19观察在原料熔融物表面上反射的参考反射体18的镜面的位置R1; 随后通过定点观测装置19测量镜像的行进距离B，同时拉动硅单晶; 以及根据实际测量值A和镜像的行进距离B计算隔热构件的下端表面与原料熔体的表面之间的距离。 因此，可以测定绝热部件的下端面与原料熔融体的表面之间的距离的方法，该方法能够稳定且更准确地测定隔热部件的下端面与原料的表面之间的距离 可以提供材料熔体。