公开(公告)号：US20100244141A1

公开(公告)日：2010-09-30

申请号：US12749112

申请日：2010-03-29

申请人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

发明人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

IPC分类号： H01L27/092 ,  H01L21/8234 ,  H01L21/28

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/84 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

摘要： During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence.

摘要翻译： 在复杂的栅电极结构的形成期间，可以应用替代栅极方法，其中可以避免等离子体辅助蚀刻工艺。 为此，栅极电极结构之一可以接收中间蚀刻停止衬垫，其可以允许在稍后的制造阶段更换占位符材料和调整功能。 中间蚀刻停止衬垫可能不会对栅极图案化顺序产生负面影响。

公开(公告)号：US08367495B2

公开(公告)日：2013-02-05

申请号：US12749112

申请日：2010-03-29

申请人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

发明人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

IPC分类号： H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/84 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

摘要： During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence.

摘要翻译： 在复杂的栅电极结构的形成期间，可以应用替代栅极方法，其中可以避免等离子体辅助蚀刻工艺。 为此，栅极电极结构之一可以接收中间蚀刻停止衬垫，其可以允许在稍后的制造阶段更换占位符材料和调整功能。 中间蚀刻停止衬垫可能不会对栅极图案化顺序产生负面影响。

公开(公告)号：US20110101470A1

公开(公告)日：2011-05-05

申请号：US12894746

申请日：2010-09-30

申请人： Klaus Hempel ,  Sven Beyer ,  Markus Lenski ,  Stephan Kruegel

发明人： Klaus Hempel ,  Sven Beyer ,  Markus Lenski ,  Stephan Kruegel

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/28088 ,  H01L21/28026 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

摘要翻译： 在替代浇口方法中，可以通过在去除占位材料的中间状态下进行材料侵蚀过程来实现闸门开口的优越的横截面形状。 因此，当执行拐角舍入处理顺序时，占位符材料的剩余部分可以有效地保护诸如高k电介质材料的底层敏感材料。

公开(公告)号：US20110266625A1

公开(公告)日：2011-11-03

申请号：US12963253

申请日：2010-12-08

申请人： Richard Carter ,  Sven Beyer ,  Markus Lenski ,  Patrick Press

发明人： Richard Carter ,  Sven Beyer ,  Markus Lenski ,  Patrick Press

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/6656 ,  H01L21/28247 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823878 ,  H01L21/84 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7848

摘要： Gate failures in sophisticated high-k metal gate electrode structures formed in an early manufacturing stage may be reduced by forming a protective liner material after the incorporation of a strain-inducing semiconductor alloy and prior to performing any critical wet chemical processes. In this manner, attacks in the sensitive gate materials after the incorporation of the strain-inducing semiconductor material may be avoided, without influencing the further processing of the device. In this manner, very sophisticated circuit designs may be applied in sophisticated gate first approaches.

摘要翻译： 在早期制造阶段形成的复杂的高k金属栅电极结构中的栅极故障可以通过在引入应变诱导半导体合金之后并且在执行任何关键的湿化学工艺之前形成保护性衬垫材料来减少。 以这种方式，可以避免在引入应变诱导半导体材料之后在敏感栅极材料中的攻击，而不影响器件的进一步处理。 以这种方式，非常复杂的电路设计可以应用于复杂的门第一方法。

公开(公告)号：US20100221906A1

公开(公告)日：2010-09-02

申请号：US12711481

申请日：2010-02-24

申请人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

发明人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

IPC分类号： H01L21/28

CPC分类号： H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66772

摘要： During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.

摘要翻译： 在用于形成复杂的高k金属栅极结构的制造顺序期间，覆盖层（例如硅层）可以在原位工艺中沉积在金属覆盖层上，以便提高金属覆盖层的完整性。 覆盖层可以在进一步加工期间提供优异的完整性，例如考虑到执行湿化学清洗工艺和随后沉积硅栅材料。

公开(公告)号：US08324091B2

公开(公告)日：2012-12-04

申请号：US12711481

申请日：2010-02-24

申请人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

发明人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

IPC分类号： H01L21/3205

CPC分类号： H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66772

摘要： During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.

摘要翻译： 在用于形成复杂的高k金属栅极结构的制造顺序期间，覆盖层（例如硅层）可以在原位工艺中沉积在金属覆盖层上，以便提高金属覆盖层的完整性。 覆盖层可以在进一步加工期间提供优异的完整性，例如考虑到执行湿化学清洗工艺和随后沉积硅栅材料。

公开(公告)号：US20100301427A1

公开(公告)日：2010-12-02

申请号：US12785185

申请日：2010-05-21

申请人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

发明人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/82345 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

摘要翻译： 在复杂半导体器件中的替代栅极方法中，可以基于使用氢氧化铵的湿化学蚀刻配方有效地去除氮化钽蚀刻停止材料。 因此，可以形成具有优异均匀性的另外的功能调节材料，同时可以提高随后的功函数调整的效率。 因此，可以在替代栅极方法的基础上实现优异的均匀性，即较不明显的晶体管可变性，其中在完成基本晶体管配置之后调节P沟道晶体管和N沟道晶体管的栅电极的功函数 。

公开(公告)号：US07943462B1

公开(公告)日：2011-05-17

申请号：US12894579

申请日：2010-09-30

申请人： Sven Beyer ,  Thilo Scheiper ,  Jan Hoentschel ,  Markus Lenski

发明人： Sven Beyer ,  Thilo Scheiper ,  Jan Hoentschel ,  Markus Lenski

IPC分类号： H01L21/8238 ,  H01L21/8234 ,  H01L21/336

CPC分类号： H01L21/28238 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/51 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7848

摘要： When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, the dielectric cap layer of the gate electrode structures may be efficiently removed on the basis of a carbon spacer element, which may thus preserve the integrity of the silicon nitride spacer structure. Thereafter, the sacrificial carbon spacer may be removed substantially without affecting other device areas, such as isolation structures, active regions and the like, which may contribute to superior process conditions during the further processing of the semiconductor device.

摘要翻译： 当在早期制造阶段形成复杂的高k金属栅电极结构时，可以基于碳间隔元件有效地去除栅电极结构的电介质盖层，这可以保持氮化硅间隔结构的完整性 。 此后，可以基本上除去牺牲碳隔离物而不影响其它器件区域，例如隔离结构，有源区等，这可能有助于在半导体器件的进一步处理期间优良的工艺条件。

公开(公告)号：US20110104863A1

公开(公告)日：2011-05-05

申请号：US12894579

申请日：2010-09-30

申请人： Sven Beyer ,  Thilo Scheiper ,  Jan Hoentschel ,  Markus Lenski

发明人： Sven Beyer ,  Thilo Scheiper ,  Jan Hoentschel ,  Markus Lenski

IPC分类号： H01L21/336

CPC分类号： H01L21/28238 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823864 ,  H01L29/51 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7848

摘要： When forming sophisticated high-k metal gate electrode structures in an early manufacturing stage, the dielectric cap layer of the gate electrode structures may be efficiently removed on the basis of a carbon spacer element, which may thus preserve the integrity of the silicon nitride spacer structure. Thereafter, the sacrificial carbon spacer may be removed substantially without affecting other device areas, such as isolation structures, active regions and the like, which may contribute to superior process conditions during the further processing of the semiconductor device.

摘要翻译： 当在早期制造阶段形成复杂的高k金属栅电极结构时，可以基于碳间隔元件有效地去除栅电极结构的电介质盖层，这可以保持氮化硅间隔结构的完整性 。 此后，可以基本上除去牺牲碳隔离物而不影响其它器件区域，例如隔离结构，有源区等，这可能有助于在半导体器件的进一步处理期间优良的工艺条件。

公开(公告)号：US08298894B2

公开(公告)日：2012-10-30

申请号：US12785185

申请日：2010-05-21

申请人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

发明人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L21/8234

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/82345 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

摘要翻译： 在复杂半导体器件中的替代栅极方法中，可以基于使用氢氧化铵的湿化学蚀刻配方有效地去除氮化钽蚀刻停止材料。 因此，可以形成具有优异均匀性的另外的功能调节材料，同时可以提高随后的功函数调整的效率。 因此，可以在替代栅极方法的基础上实现优异的均匀性，即较不明显的晶体管可变性，其中在完成基本晶体管配置之后调节P沟道晶体管和N沟道晶体管的栅电极的功函数 。