公开(公告)号：US20100221906A1

公开(公告)日：2010-09-02

申请号：US12711481

申请日：2010-02-24

申请人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

发明人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

IPC分类号： H01L21/28

CPC分类号： H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66772

摘要： During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.

摘要翻译： 在用于形成复杂的高k金属栅极结构的制造顺序期间，覆盖层（例如硅层）可以在原位工艺中沉积在金属覆盖层上，以便提高金属覆盖层的完整性。 覆盖层可以在进一步加工期间提供优异的完整性，例如考虑到执行湿化学清洗工艺和随后沉积硅栅材料。

公开(公告)号：US08324091B2

公开(公告)日：2012-12-04

申请号：US12711481

申请日：2010-02-24

申请人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

发明人： Joachim Metzger ,  Robert Binder ,  Markus Lenski ,  Klaus Hempel

IPC分类号： H01L21/3205

CPC分类号： H01L29/7833 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66772

摘要： During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material.

摘要翻译： 在用于形成复杂的高k金属栅极结构的制造顺序期间，覆盖层（例如硅层）可以在原位工艺中沉积在金属覆盖层上，以便提高金属覆盖层的完整性。 覆盖层可以在进一步加工期间提供优异的完整性，例如考虑到执行湿化学清洗工艺和随后沉积硅栅材料。

公开(公告)号：US20100301427A1

公开(公告)日：2010-12-02

申请号：US12785185

申请日：2010-05-21

申请人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

发明人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L27/088 ,  H01L21/8234

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/82345 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

摘要翻译： 在复杂半导体器件中的替代栅极方法中，可以基于使用氢氧化铵的湿化学蚀刻配方有效地去除氮化钽蚀刻停止材料。 因此，可以形成具有优异均匀性的另外的功能调节材料，同时可以提高随后的功函数调整的效率。 因此，可以在替代栅极方法的基础上实现优异的均匀性，即较不明显的晶体管可变性，其中在完成基本晶体管配置之后调节P沟道晶体管和N沟道晶体管的栅电极的功函数 。

公开(公告)号：US08298894B2

公开(公告)日：2012-10-30

申请号：US12785185

申请日：2010-05-21

申请人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

发明人： Markus Lenski ,  Klaus Hempel ,  Vivien Schroeder ,  Robert Binder ,  Joachim Metzger

IPC分类号： H01L21/8234

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/82345 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration.

摘要翻译： 在复杂半导体器件中的替代栅极方法中，可以基于使用氢氧化铵的湿化学蚀刻配方有效地去除氮化钽蚀刻停止材料。 因此，可以形成具有优异均匀性的另外的功能调节材料，同时可以提高随后的功函数调整的效率。 因此，可以在替代栅极方法的基础上实现优异的均匀性，即较不明显的晶体管可变性，其中在完成基本晶体管配置之后调节P沟道晶体管和N沟道晶体管的栅电极的功函数 。

公开(公告)号：US08383500B2

公开(公告)日：2013-02-26

申请号：US12914234

申请日：2010-10-28

申请人： Gerd Marxsen ,  Joachim Metzger ,  Robert Binder ,  Markus Lenski

发明人： Gerd Marxsen ,  Joachim Metzger ,  Robert Binder ,  Markus Lenski

IPC分类号： H01L21/3205

CPC分类号： H01L21/823842 ,  H01L21/823807 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66583 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7845

摘要： In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.

摘要翻译： 在替代栅极方法中，可以在早期制造阶段（即，在沉积栅极层堆叠时）提供一个功函数金属，从而减少后续制造阶段所需的沉积步骤的数量。 因此，与传统的替代栅极方法相比，基于优越的工艺条件，可以将另外的功函数金属和电极金属填充到栅极沟槽中。

公开(公告)号：US20110186931A1

公开(公告)日：2011-08-04

申请号：US12914234

申请日：2010-10-28

申请人： Gerd Marxsen ,  Joachim Metzger ,  Robert Binder ,  Markus Lenski

发明人： Gerd Marxsen ,  Joachim Metzger ,  Robert Binder ,  Markus Lenski

IPC分类号： H01L27/088 ,  H01L21/28

CPC分类号： H01L21/823842 ,  H01L21/823807 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66583 ,  H01L29/7833 ,  H01L29/7843 ,  H01L29/7845

摘要： In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches.

摘要翻译： 在替代栅极方法中，可以在早期制造阶段（即，在沉积栅极层堆叠时）提供一个功函数金属，从而减少后续制造阶段所需的沉积步骤的数量。 因此，与传统的替代栅极方法相比，基于优越的工艺条件，可以将另外的功函数金属和电极金属填充到栅极沟槽中。

公开(公告)号：US20110101470A1

公开(公告)日：2011-05-05

申请号：US12894746

申请日：2010-09-30

申请人： Klaus Hempel ,  Sven Beyer ,  Markus Lenski ,  Stephan Kruegel

发明人： Klaus Hempel ,  Sven Beyer ,  Markus Lenski ,  Stephan Kruegel

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/28088 ,  H01L21/28026 ,  H01L21/823807 ,  H01L21/823842 ,  H01L21/82385 ,  H01L29/66545 ,  H01L29/66583 ,  H01L29/7833 ,  H01L29/7843

摘要： In a replacement gate approach, a superior cross-sectional shape of the gate opening may be achieved by performing a material erosion process in an intermediate state of removing the placeholder material. Consequently, the remaining portion of the placeholder material may efficiently protect the underlying sensitive materials, such as a high-k dielectric material, when performing the corner rounding process sequence.

摘要翻译： 在替代浇口方法中，可以通过在去除占位材料的中间状态下进行材料侵蚀过程来实现闸门开口的优越的横截面形状。 因此，当执行拐角舍入处理顺序时，占位符材料的剩余部分可以有效地保护诸如高k电介质材料的底层敏感材料。

公开(公告)号：US20100244141A1

公开(公告)日：2010-09-30

申请号：US12749112

申请日：2010-03-29

申请人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

发明人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

IPC分类号： H01L27/092 ,  H01L21/8234 ,  H01L21/28

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/84 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

摘要： During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence.

摘要翻译： 在复杂的栅电极结构的形成期间，可以应用替代栅极方法，其中可以避免等离子体辅助蚀刻工艺。 为此，栅极电极结构之一可以接收中间蚀刻停止衬垫，其可以允许在稍后的制造阶段更换占位符材料和调整功能。 中间蚀刻停止衬垫可能不会对栅极图案化顺序产生负面影响。

公开(公告)号：US08367495B2

公开(公告)日：2013-02-05

申请号：US12749112

申请日：2010-03-29

申请人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

发明人： Sven Beyer ,  Markus Lenski ,  Richard Carter ,  Klaus Hempel

IPC分类号： H01L21/8238

CPC分类号： H01L21/823842 ,  H01L21/28088 ,  H01L21/84 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/7833

摘要： During the formation of sophisticated gate electrode structures, a replacement gate approach may be applied in which plasma assisted etch processes may be avoided. To this end, one of the gate electrode structures may receive an intermediate etch stop liner, which may allow the replacement of the placeholder material and the adjustment of the work function in a later manufacturing stage. The intermediate etch stop liner may not negatively affect the gate patterning sequence.

摘要翻译： 在复杂的栅电极结构的形成期间，可以应用替代栅极方法，其中可以避免等离子体辅助蚀刻工艺。 为此，栅极电极结构之一可以接收中间蚀刻停止衬垫，其可以允许在稍后的制造阶段更换占位符材料和调整功能。 中间蚀刻停止衬垫可能不会对栅极图案化顺序产生负面影响。

公开(公告)号：US08987144B2

公开(公告)日：2015-03-24

申请号：US13198107

申请日：2011-08-04

申请人： Stephan Kronholz ,  Markus Lenski ,  Hans-Juergen Thees

发明人： Stephan Kronholz ,  Markus Lenski ,  Hans-Juergen Thees

IPC分类号： H01L21/302 ,  H01L21/8238 ,  H01L21/311 ,  H01L29/165 ,  H01L29/66 ,  H01L29/78 ,  H01L21/3115

CPC分类号： H01L21/823864 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/165 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7834 ,  H01L29/7843 ,  H01L29/7848

摘要： In sophisticated semiconductor devices, high-k metal gate electrode structures may be formed in an early manufacturing stage with superior integrity of sensitive gate materials by providing an additional liner material after the selective deposition of a strain-inducing semiconductor material in selected active regions. Moreover, the dielectric cap materials of the gate electrode structures may be removed on the basis of a process flow that significantly reduces the degree of material erosion in isolation regions and active regions by avoiding the patterning and removal of any sacrificial oxide spacers.

摘要翻译： 在复杂的半导体器件中，高k金属栅极电极结构可以在早期制造阶段形成，其中敏感栅极材料的完整性通过在选定的活性区域中选择性沉积应变诱导半导体材料之后提供附加的衬垫材料。 此外，可以基于通过避免图案化和去除任何牺牲氧化物间隔物而显着降低隔离区域和有源区域中的材料侵蚀程度的工艺流程来去除栅电极结构的电介质盖材料。