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公开(公告)号：US07855151B2
公开(公告)日：2010-12-21
申请号：US11894316
申请日：2007-08-21
申请人： Swaroop K. Kommera , Siddhartha Bhowmik , Richard J. Oram , Sriram Ramamoorthi , David M. Braun
发明人： Swaroop K. Kommera , Siddhartha Bhowmik , Richard J. Oram , Sriram Ramamoorthi , David M. Braun
IPC分类号： H01L21/461
CPC分类号： B81C1/00087 , B41J2/16 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B81B2201/052 , H01L21/76898
摘要： A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench.
摘要翻译： 形成通过硅衬底的第一侧到达硅衬底的第二侧的槽。 沟槽是激光图案。 沟槽在硅衬底的第一侧具有口。 沟槽没有到达硅衬底的第二面。 沟槽被干蚀刻直到沟槽的至少一部分的深度大致延伸到硅衬底（12）的第二侧。 执行湿蚀刻以完成槽的形成。 湿蚀刻从沟槽的所有表面蚀刻硅。
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公开(公告)号：US20090053898A1
公开(公告)日：2009-02-26
申请号：US11894316
申请日：2007-08-21
申请人： Swaroop K. Kommera , Siddhartha Bhowmik , Richard J. Oram , Sriram Ramamoorthi , David M. Braun
发明人： Swaroop K. Kommera , Siddhartha Bhowmik , Richard J. Oram , Sriram Ramamoorthi , David M. Braun
IPC分类号： H01L21/311
CPC分类号： B81C1/00087 , B41J2/16 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B81B2201/052 , H01L21/76898
摘要： A slot is formed that reaches through a first side of a silicon substrate to a second side of the silicon substrate. A trench is laser patterned. The trench has a mouth at the first side of the silicon substrate. The trench does not reach the second side of the silicon substrate. The trench is dry etched until a depth of at least a portion of the trench is extended approximately to the second side of the silicon substrate (12). A wet etch is performed to complete formation of the slot. The wet etch etches silicon from all surfaces of the trench.
摘要翻译： 形成通过硅衬底的第一侧到达硅衬底的第二侧的槽。 沟槽是激光图案。 沟槽在硅衬底的第一侧具有口。 沟槽没有到达硅衬底的第二面。 沟槽被干蚀刻直到沟槽的至少一部分的深度大致延伸到硅衬底（12）的第二侧。 执行湿蚀刻以完成槽的形成。 湿蚀刻从沟槽的所有表面蚀刻硅。
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公开(公告)号：US20090096845A1
公开(公告)日：2009-04-16
申请号：US11872701
申请日：2007-10-15
申请人： David M. Braun , Siddhartha Bhowmik , Swaroop K. Kommera , Richard J. Oram , Phillip G. Rourke , Joshua W. Smith , Christopher C. Aschoff
发明人： David M. Braun , Siddhartha Bhowmik , Swaroop K. Kommera , Richard J. Oram , Phillip G. Rourke , Joshua W. Smith , Christopher C. Aschoff
IPC分类号： B41J2/175
CPC分类号： B41J2/1404 , B41J2/14145 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1634 , Y10T29/49401
摘要： Methods and an apparatus are disclosed, wherein a print head die includes a slot and ribs across the slot. The ribs are recessed from one or both sides of the die.
摘要翻译： 公开了一种方法和装置，其中打印头模具包括穿过狭槽的槽和肋。 肋从模具的一侧或两侧凹入。
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公开(公告)号：US08262204B2
公开(公告)日：2012-09-11
申请号：US11872701
申请日：2007-10-15
申请人： David M. Braun , Siddhartha Bhowmik , Swaroop K. Kommera , Richard J. Oram , Phillip G. Rourke , Joshua W. Smith , Christopher C. Aschoff
发明人： David M. Braun , Siddhartha Bhowmik , Swaroop K. Kommera , Richard J. Oram , Phillip G. Rourke , Joshua W. Smith , Christopher C. Aschoff
CPC分类号： B41J2/1404 , B41J2/14145 , B41J2/1603 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1634 , Y10T29/49401
摘要： Methods and an apparatus are disclosed, wherein a print head die includes a slot and ribs across the slot. The ribs are recessed from one or both sides of the die.
摘要翻译： 公开了一种方法和装置，其中打印头模具包括穿过狭槽的槽和肋。 肋从模具的一侧或两侧凹入。
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公开(公告)号：US20090020511A1
公开(公告)日：2009-01-22
申请号：US11879416
申请日：2007-07-17
IPC分类号： B08B7/00
CPC分类号： B41J2/1603 , B23K26/0622 , B23K26/0661 , B23K26/142 , B23K26/144 , B23K26/146 , B23K26/364 , B23K26/40 , B23K2101/34 , B23K2101/40 , B23K2103/50 , B41J2/1634
摘要： Embodiments of a method of ablation are disclosed.
摘要翻译： 公开了一种消融方法的实施例。
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