Plasma processing apparatus and mounting unit thereof
    1.
    发明申请
    Plasma processing apparatus and mounting unit thereof 审中-公开
    等离子体处理装置及其安装单元

    公开(公告)号:US20050274324A1

    公开(公告)日:2005-12-15

    申请号:US11094459

    申请日:2005-03-31

    摘要: A parallel plate type plasma processing apparatus including a RF feed rod for applying a high frequency power to a susceptor and a temperature detection unit for detecting the temperature of a substrate on the susceptor is configured to reduce an effect that high frequency current flowing in the RF feed rod has on temperature detection of the temperature detection unit. A surface portion of the susceptor serves as a mounting unit including an electrostatic chuck and a heater. A shaft, which is a protection pipe extracted downward from the processing chamber, is provided under the mounting unit. A chuck electrode of the electrostatic chuck serves as an electrode for applying a high frequency voltage. Provided in the shaft are two RF feed rod for supplying a power to the electrode and an optical fiber, i.e., a temperature detection unit, having a dielectric fluorescent material is disposed in a leading end thereof. Then, the two RF feed rods and bar type conductive leads for the heater are alternately arranged at equal intervals in a circumferential direction on a circle having the optical fiber at the center thereof such that the region having therein the optical fiber is an electromagnetic wave-free region since the electric force lines respectively traveling from the RF feed rods to bar type conductive leads are offset with each other.

    摘要翻译: 包括用于向感受体施加高频电力的RF馈电棒和用于检测基座上的衬底的温度的温度检测单元的平行板式等离子体处理装置被配置为减小在RF中流过的高频电流 进料棒已经对温度检测单元进行了温度检测。 基座的表面部分用作包括静电卡盘和加热器的安装单元。 作为从处理室向下方抽出的保护管的轴设置在安装单元的下方。 静电卡盘的卡盘电极用作施加高频电压的电极。 在轴上设置有用于向电极供电的两个RF馈送棒,并且具有电介质荧光材料的光纤即温度检测单元设置在其前端。 然后,用于加热器的两个RF馈电棒和棒状导电引线在圆周方向上以相等的间隔在具有光纤的中心的圆上交替布置,使得其中具有光纤的区域是电磁波 - 由于分别从RF馈送棒到棒状导电引线行进的电力线相互偏移,

    Temperature control system and temperature control method for substrate mounting table
    7.
    发明授权
    Temperature control system and temperature control method for substrate mounting table 有权
    温度控制系统和基板安装台的温度控制方法

    公开(公告)号:US08950469B2

    公开(公告)日:2015-02-10

    申请号:US12902225

    申请日:2010-10-12

    CPC分类号: H01L21/67248 H01L21/67109

    摘要: A temperature control system includes a heat transfer medium supply configured to supply a first heat transfer medium of a first temperature into a heat transfer medium path; at least one heat transfer medium storage provided between the heat transfer medium path and the heat transfer medium supply and configured to store a second heat transfer medium of a second temperature higher than the first temperature; a heat transfer medium supply control device provided between the heat transfer medium supply and the heat transfer medium path and between the heat transfer medium storage and the heat transfer medium path and configured to stop a supply of the first heat transfer medium into the heat transfer medium path from the heat transfer medium supply and to supply the second heat transfer medium into the heat transfer medium path from the heat transfer medium storage when a heating unit generates heat.

    摘要翻译: 温度控制系统包括:传热介质供给,其构造成将第一温度的第一传热介质供给到传热介质路径中; 设置在传热介质路径和传热介质之间的至少一个传热介质存储器供应并构造成存储第二温度高于第一温度的第二传热介质; 传热介质供给控制装置,设置在所述传热介质供给与所述传热介质路径之间,以及所述传热介质储存部和所述传热介质路径之间,并且被配置为停止向所述传热介质供给所述第一传热介质 并且当加热单元产生热量时,从传热介质储存器将第二传热介质供应到传热介质路径中。

    TEMPERATURE CONTROL METHOD AND TEMPERATURE CONTROL SYSTEM FOR SUBSTRATE MOUNTING TABLE
    8.
    发明申请
    TEMPERATURE CONTROL METHOD AND TEMPERATURE CONTROL SYSTEM FOR SUBSTRATE MOUNTING TABLE 审中-公开
    基板安装表温度控制方法及温度控制系统

    公开(公告)号:US20110079367A1

    公开(公告)日:2011-04-07

    申请号:US12894598

    申请日:2010-09-30

    申请人: Yasuharu Sasaki

    发明人: Yasuharu Sasaki

    IPC分类号: F25B29/00

    CPC分类号: H01L21/67109

    摘要: There is provided a temperature control method for a substrate mounting table capable of increasing a temperature of a substrate rapidly and reducing a loss of thermal energy. In a susceptor 12 including therein a heater 14, a coolant path 15 and a coolant reservoir 16 and holding thereon a wafer W on which a plasma etching process is performed, a coolant flows through the inside of the coolant path 15 and the coolant reservoir 16, and a flow of the coolant is stopped in the coolant reservoir 16 when the heater 14 generates heat.

    摘要翻译: 提供了能够快速提高基板的温度并减少热能损失的基板安装台的温度控制方法。 在其中包括加热器14,冷却剂通道15和冷却剂储存器16并且保持在其上执行等离子体蚀刻工艺的晶片W的基座12中,冷却剂流过冷却剂通道15和冷却剂储存器16的内部 并且当加热器14产生热量时,冷却剂的流动停止在冷却剂储存器16中。

    SURFACE TREATMENT METHOD
    9.
    发明申请
    SURFACE TREATMENT METHOD 有权
    表面处理方法

    公开(公告)号:US20080280536A1

    公开(公告)日:2008-11-13

    申请号:US11687879

    申请日:2007-03-19

    IPC分类号: B24B1/00

    CPC分类号: B24B1/00 B24B21/04

    摘要: A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.

    摘要翻译: 能够平滑静电卡盘的表面的表面处理方法,以提高静电卡盘的表面与基板之间的热传递效率。 静电吸盘设置在设置在基板处理装置的室中的基座的上部。 在静电卡盘的表面处理中,在静电卡盘的表面上形成喷涂膜,然后通过与磨石接触来研磨静电卡盘的表面,然后将静电卡盘的表面磨平 通过与其接触的研磨板在其表面上喷涂悬浮液,然后通过与胶带研磨装置的带接触,将静电卡盘的表面研磨成平滑的。

    SUBSTRATE MOUNTING STAGE AND SURFACE TREATMENT METHOD THEREFOR
    10.
    发明申请
    SUBSTRATE MOUNTING STAGE AND SURFACE TREATMENT METHOD THEREFOR 有权
    基板安装阶段及其表面处理方法

    公开(公告)号:US20080217291A1

    公开(公告)日:2008-09-11

    申请号:US12028904

    申请日:2008-02-11

    IPC分类号: C23F1/00 B44C1/22

    摘要: A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.

    摘要翻译: 一种基板安装台,其防止基板的吸引力降低,从而提高基板处理装置的运转速度。 基板安装台设置在基板处理装置中,并且具有安装有基板的基板安装面。 基板安装面的算术平均粗糙度(Ra)不小于第一预定值,并且基板安装表面的初始磨损高度(Rpk)不大于第二预定值。