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公开(公告)号：US20080280536A1
公开(公告)日：2008-11-13
申请号：US11687879
申请日：2007-03-19
IPC分类号： B24B1/00
摘要： A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.
摘要翻译： 能够平滑静电卡盘的表面的表面处理方法，以提高静电卡盘的表面与基板之间的热传递效率。 静电吸盘设置在设置在基板处理装置的室中的基座的上部。 在静电卡盘的表面处理中，在静电卡盘的表面上形成喷涂膜，然后通过与磨石接触来研磨静电卡盘的表面，然后将静电卡盘的表面磨平 通过与其接触的研磨板在其表面上喷涂悬浮液，然后通过与胶带研磨装置的带接触，将静电卡盘的表面研磨成平滑的。
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公开(公告)号：US20080217291A1
公开(公告)日：2008-09-11
申请号：US12028904
申请日：2008-02-11
CPC分类号： H01L21/68757 , C23C16/4581 , H01J37/20 , H01L21/67366 , H01L21/6875
摘要： A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.
摘要翻译： 一种基板安装台，其防止基板的吸引力降低，从而提高基板处理装置的运转速度。 基板安装台设置在基板处理装置中，并且具有安装有基板的基板安装面。 基板安装面的算术平均粗糙度（Ra）不小于第一预定值，并且基板安装表面的初始磨损高度（Rpk）不大于第二预定值。
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公开(公告)号：US07815492B2
公开(公告)日：2010-10-19
申请号：US11687879
申请日：2007-03-19
IPC分类号： B24B1/00
摘要： A surface treatment method that enables a surface of an electrostatic chuck to be smoothed, so as to improve the efficiency of heat transfer between the surface of the electrostatic chuck and a substrate. The electrostatic chuck is provided in an upper portion of a susceptor provided in a chamber of a substrate processing apparatus. In the surface treatment of the electrostatic chuck, a sprayed coating film is formed on the surface of the electrostatic chuck, next the surface of the electrostatic chuck is ground by bringing into contact therewith a grindstone, then the surface of the electrostatic chuck is ground flat by bringing into contact therewith a lapping plate onto a surface of which is sprayed a suspension, and then the surface of the electrostatic chuck is ground smooth by bringing into contact therewith a tape of a tape lapping apparatus.
摘要翻译： 能够平滑静电卡盘的表面的表面处理方法，以提高静电卡盘的表面与基板之间的热传递效率。 静电吸盘设置在设置在基板处理装置的室中的基座的上部。 在静电卡盘的表面处理中，在静电卡盘的表面上形成喷涂膜，然后通过与磨石接触来研磨静电卡盘的表面，然后将静电卡盘的表面磨平 通过与其接触的研磨板在其表面上喷涂悬浮液，然后通过与胶带研磨装置的带接触，将静电卡盘的表面研磨成平滑的。
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公开(公告)号：US09214376B2
公开(公告)日：2015-12-15
申请号：US12028904
申请日：2008-02-11
IPC分类号： C23C16/50 , C23C16/00 , C23F1/00 , H01L21/306 , H01L21/687 , C23C16/458 , H01L21/673 , H01J37/20
CPC分类号： H01L21/68757 , C23C16/4581 , H01J37/20 , H01L21/67366 , H01L21/6875
摘要： A substrate mounting stage that prevents poor attraction of substrates so as to improve the operating rate of a substrate processing apparatus. The substrate mounting stage is disposed in the substrate processing apparatus and has a substrate mounting surface on which a substrate is mounted. The arithmetic average roughness (Ra) of the substrate mounting surface is not less than a first predetermined value, and the initial wear height (Rpk) of the substrate mounting surface is not more than a second predetermined value.
摘要翻译： 一种基板安装台，其防止基板的吸引力降低，从而提高基板处理装置的运转速度。 基板安装台设置在基板处理装置中，并且具有安装有基板的基板安装面。 基板安装面的算术平均粗糙度（Ra）不小于第一预定值，并且基板安装面的初始磨损高度（Rpk）不大于第二预定值。
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公开(公告)号：US20080237030A1
公开(公告)日：2008-10-02
申请号：US12057975
申请日：2008-03-28
CPC分类号： H01L21/67103 , H01L21/6875
摘要： A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.
摘要翻译： 一种用于安装台的表面处理方法，其能够在节省时间和精力的同时形成符合基板的安装表面。 基板安装在安装台的安装表面上，该安装台设置在基板处理设备的容纳室中，该基板处理设备在基板上执行等离子体处理。 安装的基板被热膨胀。
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公开(公告)号：US08343372B2
公开(公告)日：2013-01-01
申请号：US12057975
申请日：2008-03-28
CPC分类号： H01L21/67103 , H01L21/6875
摘要： A surface processing method for a mounting stage, which enables a mounting surface conforming to a substrate to be formed while saving time and effort. The substrate is mounted on a mounting surface of the mounting stage disposed in a housing chamber of a substrate processing apparatus that carries out plasma processing on the substrate. The mounted substrate is thermally expanded.
摘要翻译： 一种用于安装台的表面处理方法，其能够在节省时间和精力的同时形成符合基板的安装表面。 基板安装在安装台的安装表面上，该安装台设置在基板处理设备的容纳室中，该基板处理设备在基板上执行等离子体处理。 安装的基板被热膨胀。
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公开(公告)号：US08545672B2
公开(公告)日：2013-10-01
申请号：US13290440
申请日：2011-11-07
IPC分类号： H01L21/306 , H01L21/683 , C23C16/00
CPC分类号： H01L21/67069 , H01J37/32642 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01L21/6831
摘要： The plasma processing apparatus includes: a processing chamber an inside of which is airtightly closable; a process gas supplying mechanism which supplies a process gas into the processing chamber; an exhaust mechanism which evacuates the inside of the processing chamber; a plasma generating mechanism which generates plasma from the process gas; a holding stage which is provided in the processing chamber and configured such that a substrate to be processed and a focus ring provided to surround the substrate to be processed are held on a same plane; a temperature control mechanism which adjusts a temperature of the holding stage; and an electrostatic chuck which is provided on a top surface of the holding stage and comprises an adsorbing electrode extending to a portion under the focus ring.
摘要翻译： 等离子体处理装置包括：处理室，其内部气密地关闭; 处理气体供给机构，其将处理气体供给到处理室中; 排气机构，其排出处理室的内部; 等离子体发生机构，其从处理气体产生等离子体; 保持台，设置在处理室中，并且构造成使得被处理基板和设置成围绕被处理基板的聚焦环保持在同一平面上; 温度控制机构，其调节保持台的温度; 以及静电卡盘，其设置在保持台的顶面上，并且包括延伸到聚焦环下方的部分的吸附电极。
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