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9 条记录 (耗时 0.034 秒)

    Piping support of gas turbine steam cooled combustor
    1.
    发明授权
    Piping support of gas turbine steam cooled combustor 有权
    燃气轮机蒸汽冷却燃烧器的管道支撑

    公开(公告)号：US06523352B1

    公开(公告)日：2003-02-25

    申请号：US09624179

    申请日：2000-07-24

    申请人： Syuichi Takahashi ,  Yoshiaki Nishimura ,  Hiroyuki Fujita ,  Hiroyuki Ogasawara ,  Noboru Yamada ,  Ikuo Ando ,  Haruhiko Kondo ,  Kazunori Chiba ,  Yoichi Iwasaki ,  Masayuki Takahama ,  Koichiro Yanou

    发明人： Syuichi Takahashi ,  Yoshiaki Nishimura ,  Hiroyuki Fujita ,  Hiroyuki Ogasawara ,  Noboru Yamada ,  Ikuo Ando ,  Haruhiko Kondo ,  Kazunori Chiba ,  Yoichi Iwasaki ,  Masayuki Takahama ,  Koichiro Yanou

    IPC分类号： F02C720

    CPC分类号： F01D25/12 ,  F01D9/023 ,  F23R3/002 ,  F23R3/60

    摘要： Piping support of a gas turbine steam cooled combustor is improved such that even when the piping support is damaged by combustion vibration, dropping of the piping support from the piping is prevented, so as to avoid intrusion of fractions of the piping support into turbine portion. An outer fitting member is fixed to a wall surface of a tail tube by welds. A ring is pinched inside the outer fitting member to be fixed by welds. The ring having an inner diameter slightly larger than an outer diameter of steam piping is fitted around the steam piping to be fixed by welds at three places. The steam piping is fixed to the ring, the ring is fixed to the outer fitting member and the outer fitting member is fixed to the tail tube. Thus, the steam piping is supported to the tail tube and even when the welds are detached by combustion vibration, no case of the outer fitting member dropping from the steam piping occurs.

    摘要翻译： 提高了燃气轮机蒸汽冷却燃烧器的管道支撑，使得即使当管道支撑件被燃烧振动破坏时，也防止了管道支撑件从管道的下落，从而避免了管道支撑件的一部分侵入涡轮部分。 外部装配件通过焊接固定在尾管的壁表面上。 一个环被夹在外部装配构件内部以通过焊缝固定。 具有稍大于蒸汽管道外径的内径的环安装在蒸汽管道周围，通过三处焊接固定。 蒸汽管道固定在环上，环固定在外装件上，外装件固定在尾管上。 因此，蒸汽管道被支撑在尾管上，并且即使当通过燃烧振动分离焊接时，也不会发生外部配件从蒸汽管道掉落的情况。

    Plasma processing apparatus and mounting unit thereof
    6.
    发明申请
    Plasma processing apparatus and mounting unit thereof 审中-公开
    等离子体处理装置及其安装单元

    公开(公告)号：US20050274324A1

    公开(公告)日：2005-12-15

    申请号：US11094459

    申请日：2005-03-31

    申请人： Syuichi Takahashi ,  Yasuharu Sasaki ,  Tsutomu Higashiura ,  Tomoya Kubota

    发明人： Syuichi Takahashi ,  Yasuharu Sasaki ,  Tsutomu Higashiura ,  Tomoya Kubota

    IPC分类号： C23C16/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/683

    CPC分类号： H01L21/67248 ,  H01J37/32522 ,  H01J37/32935 ,  H01L21/6831

    摘要： A parallel plate type plasma processing apparatus including a RF feed rod for applying a high frequency power to a susceptor and a temperature detection unit for detecting the temperature of a substrate on the susceptor is configured to reduce an effect that high frequency current flowing in the RF feed rod has on temperature detection of the temperature detection unit. A surface portion of the susceptor serves as a mounting unit including an electrostatic chuck and a heater. A shaft, which is a protection pipe extracted downward from the processing chamber, is provided under the mounting unit. A chuck electrode of the electrostatic chuck serves as an electrode for applying a high frequency voltage. Provided in the shaft are two RF feed rod for supplying a power to the electrode and an optical fiber, i.e., a temperature detection unit, having a dielectric fluorescent material is disposed in a leading end thereof. Then, the two RF feed rods and bar type conductive leads for the heater are alternately arranged at equal intervals in a circumferential direction on a circle having the optical fiber at the center thereof such that the region having therein the optical fiber is an electromagnetic wave-free region since the electric force lines respectively traveling from the RF feed rods to bar type conductive leads are offset with each other.

    摘要翻译： 包括用于向感受体施加高频电力的RF馈电棒和用于检测基座上的衬底的温度的温度检测单元的平行板式等离子体处理装置被配置为减小在RF中流过的高频电流 进料棒已经对温度检测单元进行了温度检测。 基座的表面部分用作包括静电卡盘和加热器的安装单元。 作为从处理室向下方抽出的保护管的轴设置在安装单元的下方。 静电卡盘的卡盘电极用作施加高频电压的电极。 在轴上设置有用于向电极供电的两个RF馈送棒，并且具有电介质荧光材料的光纤即温度检测单元设置在其前端。 然后，用于加热器的两个RF馈电棒和棒状导电引线在圆周方向上以相等的间隔在具有光纤的中心的圆上交替布置，使得其中具有光纤的区域是电磁波 - 由于分别从RF馈送棒到棒状导电引线行进的电力线相互偏移，

    Plasma processing apparatus
    8.
    发明授权
    Plasma processing apparatus 有权
    等离子体处理装置

    公开(公告)号：US08142609B2

    公开(公告)日：2012-03-27

    申请号：US12055680

    申请日：2008-03-26

    申请人： Syuichi Takahashi ,  Hiroki Matsumaru ,  Nobutaka Nakao ,  Kenji Komatsu

    发明人： Syuichi Takahashi ,  Hiroki Matsumaru ,  Nobutaka Nakao ,  Kenji Komatsu

    IPC分类号： C23F1/00 ,  C23C16/00 ,  H01L21/306 ,  H01L21/683 ,  B23B31/28

    CPC分类号： H01L21/6831 ,  H01J37/32431 ,  H01J2237/2001 ,  H01L21/67109 ,  H02N13/00 ,  Y10T279/23

    摘要： A plasma processing apparatus including a mounting table that includes a mounting table body having a temperature adjusted to be a predetermined level, and an electrostatic chuck disposed on an upper portion of the mounting table body, joined thereto with an acrylic adhesive having a thickness of 60 μm or more, to adsorb the substrate thereon. The apparatus further including first and second heat transfer gas diffusion regions formed at a center and a circumferential edge, respectively, of an upper surface of the electrostatic chuck, and first and second heat transfer gas supply units to supply heat transfer gas to the first and second heat transfer gas diffusion regions, respectively. A volume ratio of the second heat transfer gas diffusion region to the first heat transfer gas diffusion region is equal to or less than 0.1

    摘要翻译： 一种等离子体处理装置，包括：安装台，其具有调整为预定水平的温度的安装台主体和设置在安装台主体的上部的静电卡盘，其与丙烯酸粘合剂连接，厚度为60 μm以上，以在其上吸附基板。 该装置还包括分别形成在静电卡盘的上表面的中心和圆周边缘处的第一和第二传热气体扩散区域，以及第一和第二传热气体供应单元，用于向第一和第二传热气体扩散区域提供传热气体到第一和第二传热气体扩散区域， 第二传热气体扩散区域。 第二传热气体扩散区域与第一传热气体扩散区域的体积比等于或小于0.1

    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS
    9.
    发明申请
    PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS 审中-公开
    等离子体处理方法和等离子体处理装置

    公开(公告)号：US20080242086A1

    公开(公告)日：2008-10-02

    申请号：US12057518

    申请日：2008-03-28

    申请人： Hiroki MATSUMARU ,  Nobutaka Nakao ,  Kenji Komatsu ,  Syuichi Takahashi

    发明人： Hiroki MATSUMARU ,  Nobutaka Nakao ,  Kenji Komatsu ,  Syuichi Takahashi

    IPC分类号： H01L21/44

    CPC分类号： H01L21/6833 ,  H01J37/32009 ,  H01J37/32165

    摘要： A plasma processing method, for performing a plasma process on a target substrate by generating a plasma between an upper electrode and a lower electrode facing each other by means of applying a radio frequency power therebetween, includes applying a DC voltage of a positive or negative polarity to an inner electrode of an electrostatic chuck on the lower electrode to attract and hold the target substrate thereon; and changing the positive or negative polarity of the DC voltage applied to the inner electrode of the electrostatic chuck to an opposite polarity thereto between a time when the application of the radio frequency power from the radio frequency power supply is started to perform the plasma process of the target substrate and a time when the plasma process is completed.

    摘要翻译： 一种等离子体处理方法，用于通过在上部电极和下部电极之间通过在其间施加射频电力而产生等离子体，从而在目标基板上进行等离子体处理，包括：施加正极性或负极性的直流电压 连接到下电极上的静电卡盘的内电极，以在其上吸引和保持目标基板; 并且在开始施加来自射频电源的射频功率之间的时刻开始施加到静电卡盘的内部电极的直流电压的正极性或负极性与其相反的极性，以进行等离子体处理 目标衬底和等离子体处理完成的时间。