公开(公告)号：US20070295985A1

公开(公告)日：2007-12-27

申请号：US11762985

申请日：2007-06-14

Applicant: T. Weeks ,  Kevin Linthicum

Inventor： T. Weeks ,  Kevin Linthicum

IPC: H01L33/00

CPC classification number: H01L33/32 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/417 ,  H01L29/66204 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/802 ,  H01L29/861 ,  H01L31/03044 ,  H01L31/03048 ,  H01L31/1848 ,  H01L31/1856 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/38 ,  H01L33/382 ,  H01L47/026 ,  H01L2924/10155 ,  H01S5/0425 ,  Y02E10/544

Abstract: The invention provides gallium nitride material devices, structures and methods of forming the same. The devices include a gallium nitride material formed over a substrate, such as silicon. Exemplary devices include light emitting devices (e.g., LED's, lasers), light detecting devices (such as detectors and sensors), power rectifier diodes and FETs (e.g., HFETs), amongst others.

Abstract translation: 本发明提供氮化镓材料器件，其结构和形成方法。 这些器件包括在诸如硅的衬底上形成的氮化镓材料。 示例性设备包括发光器件（例如，LED，激光器），光检测器件（例如检测器和传感器），功率整流二极管和FET（例如，HFET）等。

公开(公告)号：US20050127397A1

公开(公告)日：2005-06-16

申请号：US11050598

申请日：2005-02-03

Applicant: Ricardo Borges ,  Kevin Linthicum ,  T. Weeks ,  Thomas Gehrke

Inventor： Ricardo Borges ,  Kevin Linthicum ,  T. Weeks ,  Thomas Gehrke

IPC: H01L23/34 ,  H01L23/373 ,  H01L29/20 ,  H01L33/00 ,  H01L21/00 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/109

CPC classification number: H01L23/3735 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Abstract translation: 本发明包括提供包括导热区域的氮化镓材料和形成这种材料的方法。 氮化镓材料可用于形成半导体器件。 导热区域可以包括散热层和散热片。 热扩散层在比较大的区域中分配在设备操作期间产生的热量，以防止过度的局部加热。 散热器通常形成在设备的背面或顶部的两侧，并且便于对环境的散热。 对于装置来说，优选地包括连接到装置背面的散热器的散热层。 各种半导体器件可以利用本发明的特征，包括硅衬底上的器件和产生大量热量的器件，例如功率晶体管。

公开(公告)号：US20060281284A1

公开(公告)日：2006-12-14

申请号：US11147342

申请日：2005-06-08

Applicant: Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri

Inventor： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri

IPC: H01L21/20

CPC classification number: H01L29/7783 ,  H01L29/2003

Abstract: A method of manufacturing a heterojunction device includes forming a first layer of p-type aluminum gallium nitride; forming a second layer of undoped gallium nitride on the first layer; and forming a third layer of aluminum gallium nitride on the second layer, to provide an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

Abstract translation: 异质结装置的制造方法包括：形成第一层p型氮化镓铝; 在第一层上形成第二层未掺杂的氮化镓层; 以及在所述第二层上形成第三氮化镓层，以在所述第二层和所述第三层之间提供电子气。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

公开(公告)号：US20060278892A1

公开(公告)日：2006-12-14

申请号：US11147341

申请日：2005-06-08

Applicant: Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri

Inventor： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri

IPC: H01L29/739

CPC classification number: H01L29/7783 ,  H01L29/2003

Abstract: A heterojunction device includes a first layer of p-type aluminum gallium nitride; a second layer of undoped gallium nitride on the first layer; a third layer of aluminum gallium nitride on the second layer; and an electron gas between the second and third layers. A heterojunction between the first and second layers injects positive charge into the second layer to compensate and/or neutralize negative charge within the electron gas.

Abstract translation: 异质结装置包括第一层p型氮化铝镓; 在第一层上的第二层未掺杂的氮化镓; 在第二层上的第三层氮化铝镓; 以及在第二和第三层之间的电子气体。 第一和第二层之间的异质结将正电荷注入第二层以补偿和/或中和电子气中的负电荷。

公开(公告)号：US20060281238A1

公开(公告)日：2006-12-14

申请号：US11474431

申请日：2006-06-26

Applicant: Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri ,  Elif Berkman

Inventor： Christopher Harris ,  Thomas Gehrke ,  T. Weeks ,  Cem Basceri ,  Elif Berkman

IPC: H01L21/338

CPC classification number: H01L29/7783 ,  H01L29/2003

Abstract: A method of compensating resistivity of a near-surface region of a substrate includes epitaxially growing a buffer layer on the substrate, wherein the buffer is grown as having a dopant concentration as dependent on resistivity and conductivity of the substrate, so as to deplete residual or excess charge within the near-surface region of the substrate. The dopant profile of the buffer layer be smoothly graded, or may consist of sub-layers of different dopant concentration, to also provide a highly resistive upper portion of the buffer layer ideal for subsequent device growth. Also, the buffer layer may be doped with carbon, and aluminum may be used to getter the carbon during epitaxial growth.

Abstract translation: 补偿衬底的近表面区域的电阻率的方法包括在衬底上外延生长缓冲层，其中缓冲液生长为具有取决于衬底的电阻率和导电性的掺杂剂浓度，从而消耗残余或 在基板的近表面区域内的过量电荷。 缓冲层的掺杂剂分布平滑地分级，或者可以由不同掺杂剂浓度的子层构成，还提供缓冲层的高度电阻上部，对于随后的器件生长是理想的。 此外，缓冲层可以掺杂碳，并且可以在外延生长期间使用铝来吸收碳。