公开(公告)号：US10784162B2

公开(公告)日：2020-09-22

申请号：US16168306

申请日：2018-10-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L25/065 ,  H01L25/11 ,  H01L23/538 ,  H01L25/04 ,  H01L25/07 ,  H01L25/075

摘要： A method of making a semiconductor component includes etching a substrate to define an opening. The method further includes depositing a first dielectric liner in the opening, wherein the first dielectric liner has a first stress. The method further includes depositing a second dielectric liner over the first dielectric liner, wherein the second dielectric liner has a second stress, and a direction of the first stress is opposite a direction of the second stress. The method further includes depositing a conductive material over the second dielectric liner.

公开(公告)号：US08575725B2

公开(公告)日：2013-11-05

申请号：US13799760

申请日：2013-03-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/44 ,  H01L29/40

CPC分类号： H01L21/76898 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/481 ,  H01L23/49827 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A first dielectric liner having a first compressive stress is disposed on the interior surface of the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. A metal barrier layer is disposed on the third dielectric liner. A conductive material is disposed on the metal barrier layer and fills the opening.

摘要翻译： 半导体部件包括具有顶面的半导体基板。 开口从顶表面延伸到半导体衬底中。 开口包括内表面。 具有第一压缩应力的第一电介质衬垫设置在开口的内表面上。 具有拉伸应力的第二电介质衬垫设置在第一电介质衬垫上。 具有设置在第二电介质衬垫上的第二压缩应力的第三绝缘衬垫。 金属阻挡层设置在第三电介质衬垫上。 导电材料设置在金属阻挡层上并填充开口。

公开(公告)号：US11545392B2

公开(公告)日：2023-01-03

申请号：US17021600

申请日：2020-09-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L25/065 ,  H01L25/11 ,  H01L23/538 ,  H01L25/04 ,  H01L25/07 ,  H01L25/075

摘要： A semiconductor component includes a substrate having an opening. The semiconductor component further includes a first dielectric liner in the opening, wherein the first dielectric liner having a thickness T1 at a first end of the opening, and a thickness T2 at a second end of the opening, and R1 is a ratio of T1 to T2. The semiconductor component further includes a second dielectric liner over the first dielectric liner, wherein the second dielectric liner having a thickness T3 at the first end of the opening, a thickness T4 at the second end of the opening, R2 is a ratio of T3 to T4, and R1 is greater than R2.

公开(公告)号：US10115634B2

公开(公告)日：2018-10-30

申请号：US15214776

申请日：2016-07-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

摘要： A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.

公开(公告)号：US09418923B2

公开(公告)日：2016-08-16

申请号：US14033862

申请日：2013-09-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/481 ,  H01L23/49827 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.

摘要翻译： 半导体部件包括具有开口的半导体衬底。具有第一压缩应力的第一电介质衬垫设置在开口中。 具有拉伸应力的第二电介质衬垫设置在第一电介质衬垫上。 具有设置在第二电介质衬垫上的第二压缩应力的第三绝缘衬垫。