公开(公告)号：US10049931B2

公开(公告)日：2018-08-14

申请号：US15069474

申请日：2016-03-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L33/64 ,  H01L21/683 ,  H01L23/48 ,  H01L33/48 ,  H01L33/62 ,  H01L33/00 ,  H01L21/3065 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H01L23/00

摘要： A method of making a semiconductor device is provided including forming a first opening and a second opening in a first surface of a substrate. A conductive material is formed in the first opening and in the second opening and over the first surface in the first region of the substrate between the openings. A thickness of the substrate may be reduced from a second surface of the substrate, opposite the first surface, to a third surface opposite the first surface which exposes the conductive material in the first opening and the conductive material in the second opening. A light emitting diode (LED) device is connected to the third surface of the substrate.

公开(公告)号：US08575725B2

公开(公告)日：2013-11-05

申请号：US13799760

申请日：2013-03-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/44 ,  H01L29/40

CPC分类号： H01L21/76898 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/481 ,  H01L23/49827 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component includes a semiconductor substrate having a top surface. An opening extends from the top surface into the semiconductor substrate. The opening includes an interior surface. A first dielectric liner having a first compressive stress is disposed on the interior surface of the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner. A metal barrier layer is disposed on the third dielectric liner. A conductive material is disposed on the metal barrier layer and fills the opening.

摘要翻译： 半导体部件包括具有顶面的半导体基板。 开口从顶表面延伸到半导体衬底中。 开口包括内表面。 具有第一压缩应力的第一电介质衬垫设置在开口的内表面上。 具有拉伸应力的第二电介质衬垫设置在第一电介质衬垫上。 具有设置在第二电介质衬垫上的第二压缩应力的第三绝缘衬垫。 金属阻挡层设置在第三电介质衬垫上。 导电材料设置在金属阻挡层上并填充开口。

公开(公告)号：US10115634B2

公开(公告)日：2018-10-30

申请号：US15214776

申请日：2016-07-20

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321

摘要： A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.

公开(公告)号：US09418923B2

公开(公告)日：2016-08-16

申请号：US14033862

申请日：2013-09-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L23/48 ,  H01L23/498 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/30625 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/76831 ,  H01L21/76832 ,  H01L21/76844 ,  H01L21/76846 ,  H01L23/481 ,  H01L23/49827 ,  H01L2225/06541 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor component includes a semiconductor substrate having an opening A first dielectric liner having a first compressive stress is disposed in the opening. A second dielectric liner having a tensile stress is disposed on the first dielectric liner. A third dielectric liner having a second compressive stress disposed on the second dielectric liner.

摘要翻译： 半导体部件包括具有开口的半导体衬底。具有第一压缩应力的第一电介质衬垫设置在开口中。 具有拉伸应力的第二电介质衬垫设置在第一电介质衬垫上。 具有设置在第二电介质衬垫上的第二压缩应力的第三绝缘衬垫。

公开(公告)号：US11545392B2

公开(公告)日：2023-01-03

申请号：US17021600

申请日：2020-09-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L25/065 ,  H01L25/11 ,  H01L23/538 ,  H01L25/04 ,  H01L25/07 ,  H01L25/075

摘要： A semiconductor component includes a substrate having an opening. The semiconductor component further includes a first dielectric liner in the opening, wherein the first dielectric liner having a thickness T1 at a first end of the opening, and a thickness T2 at a second end of the opening, and R1 is a ratio of T1 to T2. The semiconductor component further includes a second dielectric liner over the first dielectric liner, wherein the second dielectric liner having a thickness T3 at the first end of the opening, a thickness T4 at the second end of the opening, R2 is a ratio of T3 to T4, and R1 is greater than R2.

公开(公告)号：US08878252B2

公开(公告)日：2014-11-04

申请号：US14179007

申请日：2014-02-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L21/02 ,  H01L29/12

CPC分类号： H01L21/02365 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L29/12

摘要： A structure comprises a substrate, a mask, a buffer/nucleation layer, and a group III-V compound semiconductor material. The substrate has a top surface and has a recess from the top surface. The recess includes a sidewall. The first mask is the top surface of the substrate. The buffer/nucleation layer is along the sidewall, and has a different material composition than a material composition of the sidewall. The III-V compound semiconductor material continuously extends from inside the recess on the buffer/nucleation layer to over the first mask.

公开(公告)号：US10784162B2

公开(公告)日：2020-09-22

申请号：US16168306

申请日：2018-10-23

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Cheng-Hung Chang ,  Ebin Liao ,  Chia-Lin Yu ,  Hsiang-Yi Wang ,  Chun Hua Chang ,  Li-Hsien Huang ,  Darryl Kuo ,  Tsang-Jiuh Wu ,  Wen-Chih Chiou

IPC分类号： H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3105 ,  H01L21/321 ,  H01L25/065 ,  H01L25/11 ,  H01L23/538 ,  H01L25/04 ,  H01L25/07 ,  H01L25/075

摘要： A method of making a semiconductor component includes etching a substrate to define an opening. The method further includes depositing a first dielectric liner in the opening, wherein the first dielectric liner has a first stress. The method further includes depositing a second dielectric liner over the first dielectric liner, wherein the second dielectric liner has a second stress, and a direction of the first stress is opposite a direction of the second stress. The method further includes depositing a conductive material over the second dielectric liner.

公开(公告)号：US09287440B2

公开(公告)日：2016-03-15

申请号：US13942112

申请日：2013-07-15

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Hung-Pin Chang ,  Yung-Chi Lin ,  Chia-Lin Yu ,  Jui-Pin Hung ,  Chien Ling Hwang

IPC分类号： H01L31/00 ,  H01L33/00 ,  H01L21/683 ,  H01L23/48 ,  H01L33/48 ,  H01L33/62 ,  H01L33/64 ,  H01L21/768 ,  H01L21/48 ,  H01L23/14 ,  H01L23/498 ,  H01L23/00

CPC分类号： H01L21/76898 ,  H01L21/3065 ,  H01L21/486 ,  H01L21/6835 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/29 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L33/005 ,  H01L33/0054 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L33/644 ,  H01L33/647 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/16 ,  H01L2224/32225 ,  H01L2224/32506 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48233 ,  H01L2224/49113 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/04941 ,  H01L2924/12041 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2933/0066 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A method of making a semiconductor device, the method includes forming a first opening and a second opening in a substrate. The method further includes forming a conductive material in the first opening and in the second opening, the conductive material comprising a joined portion where the conductive material in the first opening and the conductive material in the second opening are electrically and thermally connected together at a first surface of the substrate. The method further includes reducing a thickness of the substrate from a second surface of the substrate, opposite the first surface, to expose the conductive material in the first opening and the conductive material in the second opening. The method further includes connecting a device to the second surface of the substrate.

摘要翻译： 一种制造半导体器件的方法，所述方法包括在衬底中形成第一开口和第二开口。 该方法还包括在第一开口中形成导电材料，并且在第二开口中，导电材料包括接合部分，其中第一开口中的导电材料和第二开口中的导电材料以第一开口电连接和热连接在一起 基板的表面。 该方法还包括从衬底的与第一表面相对的第二表面减小衬底的厚度，以暴露第一开口中的导电材料和第二开口中的导电材料。 该方法还包括将器件连接到衬底的第二表面。

公开(公告)号：US08686474B2

公开(公告)日：2014-04-01

申请号：US13740733

申请日：2013-01-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Ding-Yuan Chen ,  Wen-Chih Chiou ,  Chia-Lin Yu ,  Chen-Hua Yu

IPC分类号： H01L21/02 ,  H01L29/12

CPC分类号： H01L21/02365 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L29/12

摘要： A structure comprises a substrate, a mask, a buffer/nucleation layer, and a group III-V compound semiconductor material. The substrate has a top surface and has a recess from the top surface. The recess includes a sidewall. The first mask is the top surface of the substrate. The buffer/nucleation layer is along the sidewall, and has a different material composition than a material composition of the sidewall. The III-V compound semiconductor material continuously extends from inside the recess on the buffer/nucleation layer to over the first mask.

摘要翻译： 一种结构包括衬底，掩模，缓冲/成核层和III-V族化合物半导体材料。 衬底具有顶表面并且具有从顶表面的凹陷。 凹部包括侧壁。 第一个掩模是基板的顶面。 缓冲/成核层沿着侧壁，并且具有与侧壁的材料组成不同的材料组成。 III-V族化合物半导体材料从缓冲层/成核层上的凹部内部连续地延伸到第一掩模之上。

公开(公告)号：US20140159208A1

公开(公告)日：2014-06-12

申请号：US14179007

申请日：2014-02-12

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chia-Lin Yu ,  Chen-Hua Yu ,  Ding-Yuan Chen ,  Wen-Chih Chiou

IPC分类号： H01L29/12 ,  H01L21/02

CPC分类号： H01L21/02365 ,  H01L21/02104 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02538 ,  H01L21/02639 ,  H01L21/02642 ,  H01L21/02645 ,  H01L29/12

摘要： A structure comprises a substrate, a mask, a buffer/nucleation layer, and a group III-V compound semiconductor material. The substrate has a top surface and has a recess from the top surface. The recess includes a sidewall. The first mask is the top surface of the substrate. The buffer/nucleation layer is along the sidewall, and has a different material composition than a material composition of the sidewall. The III-V compound semiconductor material continuously extends from inside the recess on the buffer/nucleation layer to over the first mask.

摘要翻译： 一种结构包括衬底，掩模，缓冲/成核层和III-V族化合物半导体材料。 衬底具有顶表面并且具有从顶表面的凹陷。 凹部包括侧壁。 第一个掩模是基板的顶面。 缓冲/成核层沿着侧壁，并且具有与侧壁的材料组成不同的材料组成。 III-V族化合物半导体材料从缓冲层/成核层上的凹部内部连续地延伸到第一掩模之上。