Track-based fill (TBF) method for metal patterning

    公开(公告)号:US11556691B2

    公开(公告)日:2023-01-17

    申请号:US16573698

    申请日:2019-09-17

    摘要: Disclosed are methods for designing semiconductor devices, conductive layer patterns, and interconnection layer patterns including the operations of analyzing an initial semiconductor design layout to identify excessive open spaces between adjacent conductive elements or lines within an interconnection layer pattern, selecting or generating a dummy pattern to fill a portion of the open space, and generating a modified semiconductor design layout that incorporates the dummy pattern into first interconnection layer pattern to reduce the open space.