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公开(公告)号：US11099477B2
公开(公告)日：2021-08-24
申请号：US16586393
申请日：2019-09-27
发明人： Hao-Ming Chang
摘要： The present disclosure provides a photomask, including a substrate having a front side, an absorber layer over the front side of the substrate, a first patch layer over the front side of the substrate and adjacent to a sidewall of the absorber layer, and a second patch layer over the first patch layer.
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公开(公告)号：US11079671B2
公开(公告)日：2021-08-03
申请号：US16548876
申请日：2019-08-23
摘要： A method for fabricating a photomask is provided. The method includes several operations. A photomask substrate, having a chip region and a peripheral region adjacent to the chip region, is received. A reference pattern is formed by emitting one first radiation shot and a first beta pattern is formed by emitting a plurality of second radiation shots in the peripheral region. The plurality of second radiation shots are emitted along a first direction. A roughness of a boundary of the first beta pattern along the first direction is compared to a roughness of a boundary of the reference pattern along the first direction from a top view perspective. An alignment of the plurality of second radiation shots is adjusted if a result of the comparison exceeds a tolerance, or the photomask is formed. A photomask structure thereof and a method for manufacturing a semiconductor are also provided.
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公开(公告)号：US11036129B2
公开(公告)日：2021-06-15
申请号：US16211827
申请日：2018-12-06
发明人： Chung-Yang Huang , Hao-Ming Chang , Ming Che Li , Yu-Hsin Hsu , Po-Cheng Lai , Kuan-Shien Lee , Wei-Hsin Lin , Yi-Hsuan Lin , Wang Cheng Shih , Cheng-Ming Lin
IPC分类号： G03F1/80 , H01L21/027
摘要： A method for forming a photomask includes receiving a substrate having a first layer formed thereon, wherein a patterned second layer exposing portions of the first layer is disposed over the substrate, removing the exposed portions of the first layer through the patterned second layer to form a plurality of openings in the first layer, removing the patterned second layer, and performing a wet etching to remove portions of the first layer to widen the plurality of openings with an etchant. The etchant is in contact with a top surface of the first layer and sidewalls of the plurality of openings. Each of the plurality of openings has a first width prior to the performing of the wet etching and a second width after the performing of the wet etching. The second width is greater than the first width.
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公开(公告)号：US10816891B2
公开(公告)日：2020-10-27
申请号：US15481009
申请日：2017-04-06
发明人： Hao-Ming Chang , Chien-Hung Lai , Cheng-Ming Lin , Hsuan-Wen Wang , Min-An Yang , S. C. Hsu , Shao-Chi Wei , Yuan-Chih Chu
摘要： A method of manufacturing a mask includes depositing an end-point layer over a light transmitting substrate, depositing a phase shifter over the end-point layer, depositing a hard mask layer over the phase shifter, and removing a portion of the hard mask layer and a first portion of the phase shifter to expose a portion of the end-point layer. The end-point layer and the light transmitting substrate are transparent to a predetermined wavelength.
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公开(公告)号：US11691187B2
公开(公告)日：2023-07-04
申请号：US17815243
申请日：2022-07-27
发明人： Hao-Ming Chang , Chia-Shih Lin
CPC分类号： B08B3/08 , B08B3/12 , G03F1/82 , H01L21/02068 , B08B2203/005
摘要： A method for cleaning a substrate is provided. The method includes following operations. A substrate is received. The substrate has a plurality of conductive nanoparticles disposed over a surface of the substrate. A first mixture is applied to remove the conductive nanoparticles. The first mixture includes an SCl solution, DI water and O3. A second mixture is applied to the photomask substrate. The second mixture includes DI wafer and H2. A temperature of the second mixture is between approximately 20° C. and 40° C. The applying of the second mixture further includes a mega sonic agitation, and a frequency of the mega sonic agitation is greater than 3 MHz. A flow rate of the first mixture is between approximately 1000 ml/min and approximately 5000 ml/min. A flow rate of the second mixture is between 1000 ml/min and approximately 3000 ml/min.
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公开(公告)号：US11600484B2
公开(公告)日：2023-03-07
申请号：US16548824
申请日：2019-08-22
发明人： Shao-Chi Wei , Hao-Ming Chang
IPC分类号： H01L21/02 , B08B7/00 , H01L21/027 , H01L21/67
摘要： A cleaning method applied in semiconductor manufacturing is provided. The method includes: receiving a substrate having a surface; identifying a location of a particle on the surface of the substrate; moving a cleaning apparatus toward the location of the particle; performing a cleaning operation, thereby removing the particle by spraying a cleaning liquid from the cleaning apparatus flowing against gravity and toward the surface of the substrate; detecting the surface of the substrate; and performing a second cleaning operation when a cleaning result of the detection is not acceptable. A semiconductor manufacturing method and a system for cleaning a substrate are also provided.
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公开(公告)号：US11314164B2
公开(公告)日：2022-04-26
申请号：US16732204
申请日：2019-12-31
摘要： The structure and methods of a reticle pod are provided. A reticle pod includes a base configured to support a reticle and a cover detachably coupled to the base. The cover includes a window that allows radiation at a wavelength between about 400 nm and about 700 nm to pass through with a transmittance of greater than 70%.
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公开(公告)号：US10859905B2
公开(公告)日：2020-12-08
申请号：US16134339
申请日：2018-09-18
发明人： Hsuan-Wen Wang , Hao-Ming Chang
摘要： A method for forming a photomask includes receiving a mask substrate including a protecting layer and a shielding layer formed thereon, removing portions of the shielding layer to form a patterned shielding layer, and providing a BSE detector to monitor the removing of the portions of the shielding layer. When a difference in BSE intensities obtained from the BSE detector is greater than approximately 30%, the removing of the portions of the shielding layer is stopped. The BSE intensity in following etching loops becomes stable.
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公开(公告)号：US11953448B2
公开(公告)日：2024-04-09
申请号：US16842678
申请日：2020-04-07
CPC分类号： G01N21/8851 , G01N21/9501 , G01N2021/8887
摘要： A method for defect inspection includes receiving a substrate having a plurality of patterns; obtaining a gray scale image of the substrate, wherein the gray scale image includes a plurality of regions, and each of the regions has a gray scale value; comparing the gray scale value of each region to a gray scale references to define a first group, a second group and an Nth group, wherein each of the first group, the second group and the Nth group has at least a region; performing a calculation to obtain a score; and when the score is greater than a value, the substrate is determined to have an ESD defect, and when the score is less than the value, the substrate is determined to be free of the ESD defect.
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公开(公告)号：US11796909B2
公开(公告)日：2023-10-24
申请号：US17728734
申请日：2022-04-25
摘要： A method of manufacturing a reticle includes: disposing the reticle in a reticle pod, the reticle pod forming a sealed space to accommodate the reticle, and the reticle pod comprising a window arranged on an upper surface of the reticle pod and configured to allow a radiation at a predetermined wavelength to pass through; and performing an inspection operation on the reticle through the window.
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