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公开(公告)号：US20180111824A1
公开(公告)日：2018-04-26
申请号：US15333520
申请日：2016-10-25
Inventor： TZU-HENG WU , CHIA-HUA CHU , YI-HENG TSAI , CHENG SAN CHOU , CHEN HSIUNG YANG
CPC classification number: B81B7/008 , B81B2207/096 , B81B2207/115 , B81C1/00246 , B81C2201/053 , B81C2203/0728
Abstract: A semiconductor structure includes a first substrate, a second substrate disposed over the first substrate, and including a first surface, a second surface opposite to the first surface, a via portion extending between the first surface and the second surface, a first through hole and a second through hole, and a device disposed over the second surface, and including a dielectric layer, a backplate at least partially exposed from the dielectric layer and a membrane at least partially exposed from the dielectric layer and disposed between the backplate and the first substrate, wherein the via portion is disposed within the second through hole, and the dielectric layer is bonded with the second substrate, and the device is electrically connected to the first substrate through the via portion.
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公开(公告)号：US20180086624A1
公开(公告)日：2018-03-29
申请号：US15275976
申请日：2016-09-26
Inventor： CHUN-WEN CHENG , CHIA-HUA CHU , MING-DAO WU , TZU-HENG WU
CPC classification number: B81B3/0072 , B81B2201/0257 , B81C1/00158 , H04R19/005 , H04R19/04 , H04R31/00 , H04R2201/003
Abstract: A MEMS device includes a substrate, a supporter, a first back plate, a second back plate and a diaphragm. The substrate has a cavity. The supporter is over the substrate. The first back plate is over the cavity and fixed on the supporter. The second back plate is over the cavity and fixed on the supporter. The diaphragm is between the first back plate and the second back plate. The diaphragm includes a first sub-diaphragm and a second sub-diaphragm over the cavity and fixed on the supporter.
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公开(公告)号：US20170297901A1
公开(公告)日：2017-10-19
申请号：US15498009
申请日：2017-04-26
Inventor： FU-CHUN HUANG , LI-CHEN YEN , TZU-HENG WU , YI-HENG TSAI , CHUN-REN CHENG
CPC classification number: B81B3/0086 , B81B3/0008 , B81B2203/0307 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C2201/0132 , B81C2201/0181 , B81C2203/035
Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including a dielectric layer disposed over the first substrate; forming a sensing structure and a bonding structure over the dielectric layer; disposing a conductive layer on the sensing structure; disposing a barrier layer over the dielectric layer; removing a first portion of the barrier layer to at least partially expose the conductive layer on the sensing structure; and removing a second portion of the barrier layer to at least partially expose the bonding structure.
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