Method and structure for CMOS-MEMS thin film encapsulation

    公开(公告)号:US10689247B2

    公开(公告)日:2020-06-23

    申请号:US15860357

    申请日:2018-01-02

    IPC分类号: B81B7/00 B81C1/00

    摘要: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.

    Semiconductor structure with cavity spacing monitoring functions

    公开(公告)号:US10202278B2

    公开(公告)日:2019-02-12

    申请号:US15255606

    申请日:2016-09-02

    IPC分类号: B81B7/00 B81C1/00 B81C99/00

    摘要: The present disclosure provides a semiconductor structure. The semiconductor structure includes a cavity disposed in a substrate and enclosed by a first surface and a second surface opposite to the first surface. The semiconductor structure also includes a first electrode pair having a first electrode on the first surface and a second electrode on the second surface. The first electrode pair is configured to measure a first spacing between the first surface and the second surface. The semiconductor structure further includes a second electrode pair having a third electrode on the first surface and a fourth electrode on the second surface. The second electrode pair is configured to measure a second spacing between the first surface and the second surface.

    Method and Structure for CMOS-MEMS Thin Film Encapsulation

    公开(公告)号:US20180118560A1

    公开(公告)日:2018-05-03

    申请号:US15860357

    申请日:2018-01-02

    IPC分类号: B81B7/00 B81C1/00

    摘要: Representative methods for sealing MEMS devices include depositing insulating material over a substrate, forming conductive vias in a first set of layers of the insulating material, and forming metal structures in a second set of layers of the insulating material. The first and second sets of layers are interleaved in alternation. A dummy insulating layer is provided as an upper-most layer of the first set of layers. Portions of the first and second set of layers are etched to form void regions in the insulating material. A conductive pad is formed on and in a top surface of the insulating material. The void regions are sealed with an encapsulating structure. At least a portion of the encapsulating structure is laterally adjacent the dummy insulating layer, and above a top surface of the conductive pad. An etch is performed to remove at least a portion of the dummy insulating layer.