公开(公告)号：US09780277B2

公开(公告)日：2017-10-03

申请号：US14638690

申请日：2015-03-04

Applicant: TDK CORPORATION

Inventor： Kazuya Maekawa ,  Takashi Asatani

IPC: H01L35/32 ,  H01L35/26 ,  H01L35/22

CPC classification number: H01L35/26 ,  H01L35/22

Abstract: A thermoelectric device includes a semiconductor stacked thermoelectric thin film including a first high-purity layer composed of SiGe as a main material and a composite carrier supply layer formed on the first high-purity layer. The composite carrier supply layer includes a second high-purity layer and third high-purity layer composed of Si as a main material, and a carrier supply layer held between the second and third high-purity layers and composed of SiGe as a main material. The carrier supply layer is a P-type carrier supply layer to which an additive of a group XIII element is added or a N-type carrier supply layer to which an additive of a group XV element is added.

公开(公告)号：US09257524B2

公开(公告)日：2016-02-09

申请号：US13790398

申请日：2013-03-08

Applicant: TDK CORPORATION

Inventor： Kazuya Maekawa ,  Kunihiro Ueda

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/861 ,  H01L29/12

CPC classification number: H01L29/66136 ,  H01L21/02381 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02505 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02631 ,  H01L29/12 ,  H01L29/861

Abstract: Semiconductors of different types are formed by a crystal growth technique and joined at the interface at which rapid atomic-layer-level compositional changes occur while maintaining high crystallinity of the semiconductor layers so as to form a heterogeneous PN junction. A layered film that includes a PN junction oxide thin film is formed on a single crystal substrate. The PN junction oxide thin film is constituted by an N-type semiconductor oxide thin film and a P-type semiconductor oxide thin film that are epitaxially grown to have c-axis orientation represented by (00k).

Abstract translation: 不同类型的半导体通过晶体生长技术形成，并且在保持高半导体层的高结晶度的同时发生快速原子层组成变化的界面处接合，从而形成异质PN结。 在单晶衬底上形成包含PN结氧化物薄膜的层状膜。 PN结氧化物薄膜由外延生长为具有由（00k）表示的c轴取向的N型半导体氧化物薄膜和P型半导体氧化物薄膜构成。

公开(公告)号：US11898913B2

公开(公告)日：2024-02-13

申请号：US17889958

申请日：2022-08-17

Applicant: TDK CORPORATION

Inventor： Shinji Hara ,  Naoki Ohta ,  Kazuya Maekawa ,  Susumu Aoki ,  Maiko Shirokawa

IPC: G01J5/20 ,  G01J5/02

CPC classification number: G01J5/20 ,  G01J5/0205

Abstract: An electromagnetic wave sensor 1 has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each electromagnetic wave absorber at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each electromagnetic wave absorber is away from the second extending portions with the connection portions as fulcrums.