公开(公告)号：US11832526B2

公开(公告)日：2023-11-28

申请号：US17578625

申请日：2022-01-19

Applicant: TDK CORPORATION

Inventor： Keita Suda ,  Tomoyuki Sasaki

IPC: H10N50/10 ,  G11C11/16 ,  H10B61/00 ,  H10N50/80

CPC classification number: H10N50/10 ,  G11C11/161 ,  H10B61/00 ,  H10N50/80

Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.

公开(公告)号：US20250036931A1

公开(公告)日：2025-01-30

申请号：US18784000

申请日：2024-07-25

Applicant: TDK Corporation

Inventor： Yukio TERASAKI ,  Kazuki Nakada ,  Eiji Suzuki ,  Keita Suda ,  Tomoyuki Sasaki ,  Tetsuya Asai ,  Yuki Abe

IPC: G06N3/065 ,  G06N3/0442

Abstract: The node includes a first input terminal, a second input terminal, a first sample and hold circuit, and a first output terminal. The first input terminal is configured to be connectable to an input source for transmitting an input signal to a reservoir device. The second input terminal is configured to be connectable to at least one other node. A first terminal of the first sample and hold circuit is connected to the first input terminal and the second input terminal. A second terminal of the first sample and hold circuit is connected to the first output terminal. The first output terminal is configured to be connectable to at least one other node. The first sample and hold circuit holds and converts a joined signal of the input signal and a propagated signal from the second input terminal.

公开(公告)号：US11681498B2

公开(公告)日：2023-06-20

申请号：US16819303

申请日：2020-03-16

Applicant: TDK CORPORATION

Inventor： Keita Suda

IPC: G06F7/544 ,  G06F7/523 ,  G06F7/50

CPC classification number: G06F7/5443 ,  G06F7/50 ,  G06F7/523

Abstract: A neural network arithmetic processing device is capable of implementing a further increase in speed and efficiency of multiply-accumulate arithmetic operation, suppressing an increase in circuit scale, and performing multiply-accumulate arithmetic operation with simple design. A neural network arithmetic processing device includes a first multiply-accumulate arithmetic unit, a register connected to the first multiply-accumulate arithmetic unit, and a second multiply-accumulate arithmetic unit connected to the register. The first multiply-accumulate arithmetic unit has a first memory, a second memory, a first multiplier, a first adder, and a first output unit. The second multiply-accumulate arithmetic unit has an input unit, a third memory, second multipliers, second adders, and second output units.

公开(公告)号：US12048251B2

公开(公告)日：2024-07-23

申请号：US17345084

申请日：2021-06-11

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa ,  Eiji Komura ,  Keita Suda

IPC: H01L43/08 ,  G11C11/16 ,  G11C11/18 ,  H01L43/04 ,  H10N50/10 ,  H10N50/85 ,  H10N52/00 ,  H01F10/32 ,  H10N52/80

CPC classification number: H10N50/85 ,  G11C11/161 ,  G11C11/1675 ,  G11C11/18 ,  H10N50/10 ,  H10N52/00 ,  H01F10/3254 ,  H10N52/80

Abstract: Provided is a magnetoresistance effect element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer; and a nonmagnetic layer interposed between the first ferromagnetic layer and the second ferromagnetic layer. In the magnetoresistance effect element, the nonmagnetic layer is a tunnel barrier layer constituted by an insulator, a side surface of the first ferromagnetic layer, a side surface of the second ferromagnetic layer and a side surface of the nonmagnetic layer form a continuous inclined surface in any side surface, and a thickness of inside the nonmagnetic layer is thicker than a thickness of outside the nonmagnetic layer.

公开(公告)号：US11264563B2

公开(公告)日：2022-03-01

申请号：US16629895

申请日：2018-08-31

Applicant: TDK CORPORATION

Inventor： Keita Suda ,  Tomoyuki Sasaki

IPC: G11C11/16 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

Abstract: A spin-orbit-torque magnetization rotational element includes: a ferromagnetic metal layer, a magnetization direction of the ferromagnetic metal layer being configured to change; a spin-orbit torque wiring which extends in the first direction intersecting a lamination direction of the ferromagnetic metal layer and is joined to the ferromagnetic metal layer; and two via wires, each of which extends in a direction intersecting the spin-orbit torque wiring from a surface of the spin-orbit torque wiring opposite to a side with the ferromagnetic metal layer and is connected to a semiconductor circuit, wherein a via-to-via distance between the two via wires in the first direction is shorter than a width of the ferromagnetic metal layer in the first direction.

公开(公告)号：US11063210B2

公开(公告)日：2021-07-13

申请号：US16844249

申请日：2020-04-09

Applicant: TDK CORPORATION

Inventor： Tomoyuki Sasaki ,  Yohei Shiokawa ,  Eiji Komura ,  Keita Suda

IPC: G11B5/31 ,  H01L43/10 ,  G11C11/18 ,  G11C11/16 ,  H01L43/08 ,  H01L43/06 ,  H01F10/32 ,  H01L43/04

Abstract: Provided is a spin-orbit-torque magnetization rotational element that suppresses re-adhesion of impurities during preparation and allows a write current to easily flow. The spin-orbit-torque magnetization rotational element includes a spin-orbit torque wiring that extends in a first direction, and a first ferromagnetic layer that is located on a side of one surface of the spin-orbit torque wiring. A side surface of the spin-orbit torque wiring and a side surface of the first ferromagnetic layer form a continuous inclined surface in any side surface.