公开(公告)号：US20140340183A1

公开(公告)日：2014-11-20

申请号：US14282428

申请日：2014-05-20

Applicant: TDK CORPORATION

Inventor： Katsuyuki NAKADA ,  Takahiro SUWA ,  Kuniyasu ITO ,  Masato TAKAHASHI

IPC: H01L43/02

CPC classification number: H01L43/02 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3922 ,  G11B5/3932 ,  G11B5/3941 ,  G11B2005/3996 ,  H01L43/08

Abstract: A magnetoresistive effect element includes a pair of first soft magnetic layers that are arranged opposite to each other so as to sandwich a magnetoresistive effect film; a second soft magnetic layer; and a coil that is windingly formed about the second soft magnetic layer. When a rear end region cross-sectional area of the first soft magnetic layers is defined as S1r and a tip end region cross-sectional area of the second soft magnetic layer is defined as S2f, S2f>S1r is established, and when a tip end width of the first soft magnetic layers is defined as W1f and a rear end width of the first soft magnetic layers is defined as W1r, W1r>W1f is established.

Abstract translation: 磁阻效应元件包括彼此相对布置以便夹着磁阻效应膜的一对第一软磁性层; 第二软磁层; 以及围绕第二软磁层卷绕形成的线圈。 当第一软磁性层的后端区域横截面积被定义为S1r，将第二软磁性层的前端区域横截面积定义为S2f时，建立S2f> S1r，并且当尖端 将第一软磁性层的宽度定义为W1f，将第一软磁性层的后端宽度定义为W1r，建立W1r> W1f。

公开(公告)号：US20130222092A1

公开(公告)日：2013-08-29

申请号：US13779048

申请日：2013-02-27

Applicant: TDK CORPORATION

Inventor： Katsuyuki NAKADA ,  Takahiro SUWA ,  Kuniyasu ITO ,  Yuji KAKINUMA ,  Masato TAKAHASHI

IPC: H01F1/00

CPC classification number: H01F1/0036 ,  G01R33/091 ,  G01R33/093 ,  G11B5/3903 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3268 ,  H01F10/3286 ,  H01F10/3295 ,  Y10T428/1107 ,  Y10T428/1121

Abstract: A thin-film magnetic oscillation element includes a pinned magnetic layer, a free magnetic layer, a nonmagnetic spacer layer provided between the pinned magnetic layer and the free magnetic layer, and a pair of electrodes, in which the easy axis of magnetization of the pinned magnetic layer lies in an in-plane direction of the plane of the pinned magnetic layer, and the easy axis of magnetization of the free magnetic layer lies in a direction normal to the plane of the free magnetic layer. Preferably, the relationship between the saturation magnetization Ms and the magnetic anisotropy field Ha of the free magnetic layer satisfies 1.257 Ms

Abstract translation: 薄膜磁振动元件包括钉扎磁性层，自由磁性层，设置在钉扎磁性层和自由磁性层之间的非磁性间隔层，以及一对电极，其中固定的易磁化轴 磁性层位于被钉扎的磁性层的平面的面内方向，自由磁性层的易磁化轴位于与自由磁性层的平面垂直的方向上。 优选地，自由磁性层的饱和磁化强度Ms和磁各向异性场Ha之间的关系满足1.257 Ms

公开(公告)号：US20150061393A1

公开(公告)日：2015-03-05

申请号：US14471974

申请日：2014-08-28

Applicant: TDK CORPORATION

Inventor： Kuniyasu ITO ,  Tetsuya SHIBATA ,  Takahiro SUWA ,  Katsuyuki NAKADA ,  Masato TAKAHASHI

IPC: G05F7/00

CPC classification number: G05F7/00 ,  Y10T307/549

Abstract: In a variable voltage circuit 50, a resistive element 104 and a magnetoresistance effect element 108 are connected in series between a first voltage source 101 and a second voltage source 102. A magnetic field supply mechanism 121 that applies a magnetic field to the magnetoresistance effect element 108 is provided in the vicinity of the magnetoresistance effect element 108. The magnetic field supply mechanism 121 can vary the resistance value of the magnetoresistance effect element 108 by varying the magnetic field. A node 106 between the resistive element 104 and the magnetoresistance effect element 108 is connected to an output terminal 103.

Abstract translation: 在可变电压电路50中，电阻元件104和磁阻效应元件108串联连接在第一电压源101和第二电压源102之间。磁场供应机构121将磁场施加到磁阻效应元件 108设置在磁阻效应元件108的附近。磁场供给机构121可以通过改变磁场来改变磁阻效应元件108的电阻值。 电阻元件104和磁阻效应元件108之间的节点106连接到输出端子103。