公开(公告)号：US5695657A

公开(公告)日：1997-12-09

申请号：US670937

申请日：1996-06-27

申请人： Takuji Shibata ,  Yoshihiro Kanno ,  Tadayuki Honda ,  Akio Takada ,  Yukio Kondo ,  Tadao Suzuki

发明人： Takuji Shibata ,  Yoshihiro Kanno ,  Tadayuki Honda ,  Akio Takada ,  Yukio Kondo ,  Tadao Suzuki

IPC分类号： G11B5/31 ,  G11B5/39 ,  B44C1/22

CPC分类号： G11B5/3903 ,  G11B5/3941 ,  G11B5/3945 ,  G11B5/3113 ,  Y10T29/49032

摘要： A magneto-resistance effect type thin-film magnetic head for detecting reproduced signals by the magneto-resistance effect, which is suitable for detecting reproduced signals by magneto-resistance effects, is disclosed. The thin-film magnetic head includes a two-layered magneto-resistance effect element made up of a first magneto-resistance effect film and a second magneto-resistance effect film of substantially the same width as the first magneto-resistance effect film, layered with a non-magnetic insulating film in-between. Since the magneto-static coupling is produced between the first and second MR films, the magnetic state between the first and second MR films is stabilized. The film thickness contributing to the playback output can be reduced as in the case of a single-layer magnetic head constituted by a single-layer MR film for realizing a high playback output.

摘要翻译： 公开了一种磁阻效应型薄膜磁头，用于通过磁阻效应检测再生信号，适用于通过磁阻效应检测再生信号。 薄膜磁头包括由第一磁阻效应膜和与第一磁阻效应膜基本上相同的宽度的第二磁阻效应膜构成的双层磁阻效应元件， 中间的非磁性绝缘膜。 由于在第一和第二MR膜之间产生磁静态耦合，所以第一和第二MR膜之间的磁状态是稳定的。 与由用于实现高回放输出的单层MR膜构成的单层磁头的情况相比，有助于重放输出的膜厚可以减小。

公开(公告)号：US20110215800A1

公开(公告)日：2011-09-08

申请号：US12660909

申请日：2010-03-05

申请人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

发明人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

IPC分类号： G01R33/02 ,  B44C1/22

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/0011 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3941

摘要： A CPP MR sensor interposes a tapered soft magnetic flux guide (FG) layer between a hard magnetic biasing layer (HB) and the free layer of the sensor stack. The flux guide channels the flux of the hard magnetic biasing layer to effectively bias the free layer, while eliminating instability problems associated with magnetostatic coupling between the hard bias layers and the upper and lower shields surrounding the sensor when the reader-shield-spacing (RSS) is small.

摘要翻译： CPP MR传感器将锥形软磁通导向器（FG）层介于硬磁偏置层（HB）和传感器堆叠的自由层之间。 磁通引导件引导硬磁偏置层的磁通，以有效地偏置自由层，同时消除与读取器屏蔽间隔（RSS）之间的硬偏置层与传感器周围的上下屏蔽之间的静磁耦合相关的不稳定性问题 ） 是小。

公开(公告)号：US06455177B1

公开(公告)日：2002-09-24

申请号：US09454085

申请日：1999-12-03

申请人： Brenda A. Everitt ,  Arthur V. Pohm

发明人： Brenda A. Everitt ,  Arthur V. Pohm

IPC分类号： B32B900

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3941 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1129 ,  Y10T428/12507 ,  Y10T428/12514

摘要： A stabilized GMR device includes a GMR stack having a first and a second edge. Stabilization means are positioned adjacent to the first and the second edge of the GMR stack for stabilizing the GMR stack. The GMR stack includes a first layer of ferromagnetic material and a second layer of ferromagnetic material. A spacer layer is positioned between the first and the second ferromagnetic layers. A buffer layer is positioned adjacent to the first magnetic layer and a cap layer is positioned adjacent to the second ferromagnetic layer. The stabilization means include a first coupler layer positioned adjacent to the first edge of the GMR stack and a second coupler layer positioned adjacent to the second edge of the GMR stack. The stabilization means also include a first ferromagnetic layer positioned adjacent to the first coupler layer and a second ferromagnetic layer positioned adjacent to the second coupler layer.

摘要翻译： 稳定的GMR装置包括具有第一和第二边缘的GMR堆叠。 稳定装置位于与GMR堆叠的第一和第二边缘相邻以用于稳定GMR堆叠。 GMR堆叠包括第一层铁磁材料层和第二层铁磁材料层。 间隔层位于第一和第二铁磁层之间。 缓冲层定位成与第一磁性层相邻，并且盖层定位成与第二铁磁层相邻。 稳定装置包括邻近GMR堆叠的第一边缘定位的第一耦合器层和邻近GMR堆叠的第二边缘定位的第二耦合器层。 稳定装置还包括邻近第一耦合器层定位的第一铁磁层和邻近第二耦合层定位的第二铁磁层。

公开(公告)号：US09153771B2

公开(公告)日：2015-10-06

申请号：US14282428

申请日：2014-05-20

申请人： TDK CORPORATION

发明人： Katsuyuki Nakada ,  Takahiro Suwa ,  Kuniyasu Ito ,  Masato Takahashi

IPC分类号： G11B5/39 ,  H01L43/02 ,  H01L43/08

CPC分类号： H01L43/02 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3922 ,  G11B5/3932 ,  G11B5/3941 ,  G11B2005/3996 ,  H01L43/08

摘要： A magnetoresistive effect element includes a pair of first soft magnetic layers that are arranged opposite to each other so as to sandwich a magnetoresistive effect film; a second soft magnetic layer; and a coil that is windingly formed about the second soft magnetic layer. When a rear end region cross-sectional area of the first soft magnetic layers is defined as S1r and a tip end region cross-sectional area of the second soft magnetic layer is defined as S2f, S2f>S1r is established, and when a tip end width of the first soft magnetic layers is defined as W1f and a rear end width of the first soft magnetic layers is defined as W1r, W1r>W1f is established.

摘要翻译： 磁阻效应元件包括彼此相对布置以便夹着磁阻效应膜的一对第一软磁性层; 第二软磁层; 以及围绕第二软磁层卷绕形成的线圈。 当第一软磁性层的后端区域横截面积被定义为S1r，将第二软磁性层的前端区域横截面积定义为S2f时，建立S2f> S1r，并且当尖端 将第一软磁性层的宽度定义为W1f，将第一软磁性层的后端宽度定义为W1r，建立W1r> W1f。

公开(公告)号：US20140340183A1

公开(公告)日：2014-11-20

申请号：US14282428

申请日：2014-05-20

申请人： TDK CORPORATION

发明人： Katsuyuki NAKADA ,  Takahiro SUWA ,  Kuniyasu ITO ,  Masato TAKAHASHI

IPC分类号： H01L43/02

CPC分类号： H01L43/02 ,  G11B5/3906 ,  G11B5/3909 ,  G11B5/3922 ,  G11B5/3932 ,  G11B5/3941 ,  G11B2005/3996 ,  H01L43/08

摘要： A magnetoresistive effect element includes a pair of first soft magnetic layers that are arranged opposite to each other so as to sandwich a magnetoresistive effect film; a second soft magnetic layer; and a coil that is windingly formed about the second soft magnetic layer. When a rear end region cross-sectional area of the first soft magnetic layers is defined as S1r and a tip end region cross-sectional area of the second soft magnetic layer is defined as S2f, S2f>S1r is established, and when a tip end width of the first soft magnetic layers is defined as W1f and a rear end width of the first soft magnetic layers is defined as W1r, W1r>W1f is established.

摘要翻译： 磁阻效应元件包括彼此相对布置以便夹着磁阻效应膜的一对第一软磁性层; 第二软磁层; 以及围绕第二软磁层卷绕形成的线圈。 当第一软磁性层的后端区域横截面积被定义为S1r，将第二软磁性层的前端区域横截面积定义为S2f时，建立S2f> S1r，并且当尖端 将第一软磁性层的宽度定义为W1f，将第一软磁性层的后端宽度定义为W1r，建立W1r> W1f。

公开(公告)号：US20020150675A1

公开(公告)日：2002-10-17

申请号：US10179119

申请日：2002-06-25

发明人： Brenda A. Everitt ,  Arthur V. Pohm

IPC分类号： G11B005/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3941 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1129 ,  Y10T428/12507 ,  Y10T428/12514

摘要： A stabilized GMR device includes a GMR stack having a first and a second edge. Stabilization means are positioned adjacent to the first and the second edge of the GMR stack for stabilizing the GMR stack. The GMR stack includes a first layer of ferromagnetic material and a second layer of ferromagnetic material. A spacer layer is positioned between the first and the second ferromagnetic layers. A buffer layer is positioned adjacent to the first magnetic layer and a cap layer is positioned adjacent to the second ferromagnetic layer. The stabilization means include a first coupler layer positioned adjacent to the first edge of the GMR stack and a second coupler layer positioned adjacent to the second edge of the GMR stack. The stabilization means also include a first ferromagnetic layer positioned adjacent to the first coupler layer and a second ferromagnetic layer positioned adjacent to the second coupler layer.

公开(公告)号：US5708542A

公开(公告)日：1998-01-13

申请号：US685611

申请日：1996-07-24

申请人： Akio Takada ,  Takuji Shibata ,  Tadayuki Honda

发明人： Akio Takada ,  Takuji Shibata ,  Tadayuki Honda

IPC分类号： G11B5/31 ,  G11B5/39

CPC分类号： G11B5/3903 ,  G11B5/3932 ,  G11B5/3941 ,  G11B5/3113

摘要： A magnetoresistance effect thin-film magnetic head superior in magnetic stability and capable of developing a high playback power. The thin-film magnetic head has a magnetoresistance effect stabilizing layer 11 inclusive a diamagnetic film or a hard magnetic film, a non-magnetic insulating layer 12 and a magnetoresistance effect layer 13 inclusive of a magnetoresistance effect film, layered together to form a magnetoresistance effect element 3. The thin-film magnetic head also has a non-magnetic insulating layer 4 arranged on a lateral surface of the magnetoresistance effect element 3 and a pair of electrodes connected to the magnetoresistance effect layer 13 on both ends of the upper surface of the magneto-resistance effect element 3. The playback signals are detected by the magnetoresistance effect of the magnetoresistance effect layer 13.

摘要翻译： 具有优异的磁稳定性和能够发展高回放功率的磁阻效应薄膜磁头。 薄膜磁头具有磁阻效应稳定层11，包括抗磁性膜或硬磁性膜，非磁性绝缘层12和包含磁阻效应膜的磁阻效应层13，层叠在一起以形成磁阻效应 薄膜磁头还具有布置在磁阻效应元件3的侧表面上的非磁性绝缘层4和连接到磁阻效应层13的上表面两端的磁阻效应层13的一对电极 磁阻效应元件3.再现信号由磁阻效应层13的磁阻效应检测。

公开(公告)号：US08659292B2

公开(公告)日：2014-02-25

申请号：US12660909

申请日：2010-03-05

申请人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

发明人： Yuchen Zhou ,  Tong Zhao ,  Kunliang Zhang

IPC分类号： G01R33/02

CPC分类号： G11B5/398 ,  B82Y25/00 ,  G01R33/0011 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3941

摘要： A CPP MR sensor interposes a tapered soft magnetic flux guide (FG) layer between a hard magnetic biasing layer (HB) and the free layer of the sensor stack. The flux guide channels the flux of the hard magnetic biasing layer to effectively bias the free layer, while eliminating instability problems associated with magnetostatic coupling between the hard bias layers and the upper and lower shields surrounding the sensor when the reader-shield-spacing (RSS) is small.

摘要翻译： CPP MR传感器将锥形软磁通导向器（FG）层介于硬磁偏置层（HB）和传感器堆叠的自由层之间。 磁通引导件引导硬磁偏置层的磁通，以有效地偏置自由层，同时消除与读取器屏蔽间隔（RSS）之间的硬偏置层与传感器周围的上下屏蔽之间的静磁耦合相关的不稳定性问题 ） 是小。

公开(公告)号：US06709696B2

公开(公告)日：2004-03-23

申请号：US10179119

申请日：2002-06-25

申请人： Brenda A. Everitt ,  Arthur V. Pohm

发明人： Brenda A. Everitt ,  Arthur V. Pohm

IPC分类号： B05D512

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3916 ,  G11B5/3941 ,  G11B2005/0008 ,  G11B2005/3996 ,  H01L43/08 ,  Y10T428/1129 ,  Y10T428/12507 ,  Y10T428/12514

摘要： A stabilized GMR device includes a GMR stack having a first and a second edge. Stabilization means are positioned adjacent to the first and the second edge of the GMR stack for stabilizing the GMR stack. The GMR stack includes a first layer of ferromagnetic material and a second layer of ferromagnetic material. A spacer layer is positioned between the first and the second ferromagnetic layers. A buffer layer is positioned adjacent to the first magnetic layer and a cap layer is positioned adjacent to the second ferromagnetic layer. The stabilization means include a first coupler layer positioned adjacent to the first edge of the GMR stack and a second coupler layer positioned adjacent to the second edge of the GMR stack. The stabilization means also include a first ferromagnetic layer positioned adjacent to the first coupler layer and a second ferromagnetic layer positioned adjacent to the second coupler layer.

摘要翻译： 稳定的GMR装置包括具有第一和第二边缘的GMR堆叠。 稳定装置位于与GMR堆叠的第一和第二边缘相邻以用于稳定GMR堆叠。 GMR堆叠包括第一层铁磁材料层和第二层铁磁材料层。 间隔层位于第一和第二铁磁层之间。 缓冲层定位成与第一磁性层相邻，并且盖层定位成与第二铁磁层相邻。 稳定装置包括邻近GMR堆叠的第一边缘定位的第一耦合器层和邻近GMR堆叠的第二边缘定位的第二耦合器层。 稳定装置还包括邻近第一耦合器层定位的第一铁磁层和邻近第二耦合层定位的第二铁磁层。

公开(公告)号：US5875079A

公开(公告)日：1999-02-23

申请号：US818040

申请日：1997-03-14

申请人： Tadayuki Honda ,  Takuji Shibata ,  Akio Takada

发明人： Tadayuki Honda ,  Takuji Shibata ,  Akio Takada

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  G11B5/3903 ,  G11B5/3941 ,  G11B5/398

摘要： A thin-film magnetic head in which magnetic stability of a magnetoresistance effect film is improved for further stabilizing the playback output. The thin-film magnetic head includes a magnetoresistance effect stabilizing layer 11 having a hard magnetic member 11d and a soft magnetic member 11e, a non-magnetic insulating layer 12 layered on the magnetoresistance effect stabilizing layer 11, a magnetoresistance effect layer 13 layered on the non-magnetic insulating layer 12 and a pair of electrodes connected on both ends of the magnetoresistance effect layer 13. Under the effect of the hard magnetic member 11d, the magnetoresistance effect layer 13 is reduced in coercivity and, under the effect of the soft magnetic member 11e, the magnetic filed which proves to be the saturation flex density is increased.

摘要翻译： 提高了磁阻效应膜的磁稳定性以进一步稳定重放输出的薄膜磁头。 薄膜磁头包括具有硬磁体11d和软磁体11e的磁阻效应稳定层11，层叠在磁阻效应稳定层11上的非磁性绝缘层12，层叠在磁阻效应层11上的磁阻效应层13 非磁性绝缘层12和连接在磁阻效应层13的两端的一对电极。在硬磁性体11d的作用下，磁电阻效应层13的矫顽力降低，在软磁性的作用下 成员11e，证明是饱和弯曲密度的磁场增加。