公开(公告)号：US20240242861A1

公开(公告)日：2024-07-18

申请号：US18537243

申请日：2023-12-12

Applicant: TDK Corporation

Inventor： Koki SHINOZAWA ,  Masayuki Uchida

IPC: H01C7/102 ,  H01C1/142

CPC classification number: H01C7/102 ,  H01C1/142

Abstract: In the chip varistor, the protruding lengths of the second portions of the first and second electrodes are shorter than the protruding lengths of the first portions of the third electrodes. Since the protruding lengths of the second portions are relatively short, distances between the first electrodes and the second electrodes on the side surfaces are secured, thereby suppressing short-circuiting. On the other hand, by making the protruding length of the first portion of the third electrode relatively long, the first portion becomes wide, the covering property of each end portion of the third conductor exposed on the side surface on which the third electrode is provided is enhanced, and the connectivity between the third conductor and the third electrode is improved.

公开(公告)号：US11594351B2

公开(公告)日：2023-02-28

申请号：US17533920

申请日：2021-11-23

Applicant: TDK CORPORATION

Inventor： Shin Kagaya ,  Masayuki Uchida ,  Naoyoshi Yoshida ,  Takeshi Yanata ,  Satoshi Goto ,  Takeshi Oyanagi ,  Yusuke Imai ,  Daiki Suzuki ,  Kaname Ueda

IPC: H01C7/18 ,  H01C7/112 ,  H01C7/10

Abstract: A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

公开(公告)号：US10096408B2

公开(公告)日：2018-10-09

申请号：US15185892

申请日：2016-06-17

Applicant: TDK CORPORATION

Inventor： Masayuki Uchida ,  Takahiro Itami ,  Naoyoshi Yoshida ,  Takeshi Oyanagi ,  Koki Yamada ,  Kazuaki Kajiwara

IPC: H01C7/12 ,  C04B35/453 ,  C04B35/638

Abstract: A voltage nonlinear resistor ceramic comprises: a Zn oxide; a Co oxide; an R (specific rare earth) oxide; a Cr oxide; an M1 (Ca, Sr) oxide; an M2 (Al, Ga, In) oxide; and strontium titanate. When content of the Zn oxide is assumed to be 100 mole portion in terms of Zn, content of the Co oxide is 0.30 to 10 mole portion in terms of Co, content of the R oxide is 0.10 to 10 mole portion in terms of R, content of the Cr oxide is 0.01 to 2 mole portion in terms of Cr, content of the M1 oxide is 0.10 to 5 mole portion in terms of M1, content of the M2 oxide is 0.0005 to 5 mole portion in terms of M2, and content of the strontium titanate is 0.10 to 5 mole portion in terms of SrTiO3.

公开(公告)号：US11682504B2

公开(公告)日：2023-06-20

申请号：US17687752

申请日：2022-03-07

Applicant: TDK CORPORATION

Inventor： Satoshi Goto ,  Naoyoshi Yoshida ,  Takeshi Yanata ,  Takeshi Oyanagi ,  Daiki Suzuki ,  Shin Kagaya ,  Masayuki Uchida ,  Yusuke Imai

IPC: H01C7/10 ,  H01C7/102 ,  H01C7/108

CPC classification number: H01C7/1006 ,  H01C7/102 ,  H01C7/108

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

公开(公告)号：US11302464B2

公开(公告)日：2022-04-12

申请号：US17230100

申请日：2021-04-14

Applicant: TDK CORPORATION

Inventor： Satoshi Goto ,  Naoyoshi Yoshida ,  Takeshi Yanata ,  Takeshi Oyanagi ,  Daiki Suzuki ,  Shin Kagaya ,  Masayuki Uchida ,  Yusuke Imai

IPC: H01C7/10 ,  H01C7/102 ,  H01C7/108

Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

公开(公告)号：US10706995B1

公开(公告)日：2020-07-07

申请号：US16710194

申请日：2019-12-11

Applicant: TDK CORPORATION

Inventor： Masayuki Uchida

IPC: H01C7/12 ,  H01C1/14

Abstract: A chip varistor includes two functional layers (that is, a first functional layer and a second functional layer) inside an element body, and the two functional layers have substantially the same electrostatic capacitance. In the chip varistor, the element body is made highly resistive from an outer surface due to alkali metal containing portion. However, the alkali metal containing portion does not reach the first functional layer and the second functional layer. Therefore, the alkali metal containing portion curbs a parasitic capacitance of the chip varistor without affecting the electrostatic capacitances of the first functional layer and the second functional layer. Accordingly, the chip varistor includes the two functional layers in which variations in capacitance are curbed.