Voltage nonlinear resistor ceramic composition and electronic component
    1.
    发明授权
    Voltage nonlinear resistor ceramic composition and electronic component 有权
    电压非线性电阻陶瓷组成和电子元器件

    公开(公告)号:US09087623B2

    公开(公告)日:2015-07-21

    申请号:US14102005

    申请日:2013-12-10

    CPC classification number: H01B3/12 C04B35/453 H01C7/112

    Abstract: A voltage nonlinear resistor ceramic composition comprises zinc oxide, with respect to 100 mol of said zinc oxide, 0.30 to 10 mol of Co oxide in terms of Co, 0.10 to 10 mol of R oxide (note that R is at least one selected from a group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in terms of R, 0.10 to 5 mol of Cr oxide in terms of Cr, 0.10 to 5 mol of oxide of at least one selected from Ca and Sr respectively in terms of Ca or Sr, 0.0005 to 5 mol of oxide of at least one selected from Al, Ga and In respectively in terms of Al, Ga or In, and 0.10 to 5 mol of barium titanate in terms of BaTiO3.

    Abstract translation: 电压非线性电阻陶瓷组合物包含氧化锌,相对于100摩尔所述氧化锌,换算成Co为0.30-10摩尔Co氧化物,0.10-10摩尔R氧化物(注意,R为选自 以R为0.10〜5摩尔的Cr氧化物,以Cr为基准,Y,La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu组成的组, 分别以Ca或Sr计,选自Ca和Sr中的至少一种的氧化物为0.10〜5mol,Al,Ga,In中的Al,Ga,In中的至少一种选自Al,Ga,In的氧化物为0.0005〜5mol, 和钛酸钡0.10〜5摩尔的BaTiO 3换算。

    Chip varistor
    2.
    发明授权
    Chip varistor 有权
    片式压敏电阻

    公开(公告)号:US09142340B2

    公开(公告)日:2015-09-22

    申请号:US14102850

    申请日:2013-12-11

    CPC classification number: H01C7/123 H01C1/148 H01C7/1006 H01C7/18

    Abstract: An element body has first and second faces opposed to each other. A first conductor has one end exposed in a first face and the other end located in the element body. The second conductor has one end exposed in a second face and the other end located in the element body. The element body has a first element body section having the nonlinear voltage-current characteristics and a second element body section in which an electric current is more likely to flow than in the first element body section. The first element body section is located at least in part between the first conductor and the second conductor, in a direction in which the first conductor and the second conductor are separated from each other. The other end of the first conductor and the other end of the second conductor are located in the second element body section.

    Abstract translation: 元件主体具有彼此相对的第一和第二面。 第一导体的一端暴露在第一面中,另一端位于元件主体中。 第二导体的一端暴露在第二面中,另一端位于元件主体中。 元件主体具有非线性电压 - 电流特性的第一元件主体部分和电流比第一元件主体部分更容易流动的第二元件主体部分。 第一元件主体部分在第一导体和第二导体彼此分离的方向上至少部分地位于第一导体和第二导体之间。 第一导体的另一端和第二导体的另一端位于第二元件主体部分中。

    Transient voltage protection device

    公开(公告)号:US12100536B2

    公开(公告)日:2024-09-24

    申请号:US17829569

    申请日:2022-06-01

    CPC classification number: H01C1/142 H01C7/1006 H01C7/123 H01C1/148

    Abstract: A transient voltage protection device includes: an element body; a cavity portion provided in the element body; a pair of internal electrodes disposed in the element body; and a pair of external electrodes connected to the pair of internal electrodes. The pair of internal electrodes extend along a first direction and face each other in a second direction intersecting the first direction. The cavity portion includes a gap region located between the pair of internal electrodes in the second direction. A tip portion of at least one of the pair of internal electrodes is in contact with only the element body.

    Multilayer chip varistor
    4.
    发明授权

    公开(公告)号:US11594351B2

    公开(公告)日:2023-02-28

    申请号:US17533920

    申请日:2021-11-23

    Abstract: A multilayer chip varistor includes an element body, first and second external electrodes, and first and second electrical conductor groups. The first electrical conductor group includes a first internal electrode connected to the first external electrode, and a first intermediate electrical conductor opposed to the first internal electrode. The second electrical conductor group includes a second internal electrode including a first electrically conductive material and connected to the second external electrode, and a second intermediate electrical conductor opposed to the second internal electrode. At least one of the first and second intermediate electrical conductors includes the second electrically conductive material. The element body includes a low electrical resistance region between the first and second internal electrodes. The second electrically conductive material is diffused in the low electrical resistance region.

    Voltage nonlinear resistor ceramic and electronic component

    公开(公告)号:US10096408B2

    公开(公告)日:2018-10-09

    申请号:US15185892

    申请日:2016-06-17

    Abstract: A voltage nonlinear resistor ceramic comprises: a Zn oxide; a Co oxide; an R (specific rare earth) oxide; a Cr oxide; an M1 (Ca, Sr) oxide; an M2 (Al, Ga, In) oxide; and strontium titanate. When content of the Zn oxide is assumed to be 100 mole portion in terms of Zn, content of the Co oxide is 0.30 to 10 mole portion in terms of Co, content of the R oxide is 0.10 to 10 mole portion in terms of R, content of the Cr oxide is 0.01 to 2 mole portion in terms of Cr, content of the M1 oxide is 0.10 to 5 mole portion in terms of M1, content of the M2 oxide is 0.0005 to 5 mole portion in terms of M2, and content of the strontium titanate is 0.10 to 5 mole portion in terms of SrTiO3.

    Method for producing chip varistor and chip varistor

    公开(公告)号:US11682504B2

    公开(公告)日:2023-06-20

    申请号:US17687752

    申请日:2022-03-07

    CPC classification number: H01C7/1006 H01C7/102 H01C7/108

    Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

    Electronic component
    7.
    发明授权

    公开(公告)号:US10575404B2

    公开(公告)日:2020-02-25

    申请号:US16134733

    申请日:2018-09-18

    Abstract: An electronic component includes an element body, a thin film layer disposed to cover a pair of end surfaces and four side surfaces, a first external electrode and a second external electrode, and internal conductors, wherein each of the first external electrode and the second external electrode has first electrode layers disposed on the thin film layer and electrically connected to the internal conductors, and second electrode layers disposed to cover the first electrode layers, and a thermal conductivity of the second electrode layers is lower than a thermal conductivity of the first electrode layers.

    VOLTAGE NONLINEAR RESISTOR CERAMIC COMPOSITION AND ELECTRONIC COMPONENT
    8.
    发明申请
    VOLTAGE NONLINEAR RESISTOR CERAMIC COMPOSITION AND ELECTRONIC COMPONENT 有权
    电压非线性电阻陶瓷组合物和电子元件

    公开(公告)号:US20140171289A1

    公开(公告)日:2014-06-19

    申请号:US14102005

    申请日:2013-12-10

    CPC classification number: H01B3/12 C04B35/453 H01C7/112

    Abstract: A voltage nonlinear resistor ceramic composition comprises zinc oxide, with respect to 100 mol of said zinc oxide, 0.30 to 10 mol of Co oxide in terms of Co, 0.10 to 10 mol of R oxide (note that R is at least one selected from a group consisting of Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in terms of R, 0.10 to 5 mol of Cr oxide in terms of Cr, 0.10 to 5 mol of oxide of at least one selected from Ca and Sr respectively in terms of Ca or Sr, 0.0005 to 5 mol of oxide of at least one selected from Al, Ga and In respectively in terms of Al, Ga or In, and 0.10 to 5 mol of barium titanate in terms of BaTiO3.

    Abstract translation: 电压非线性电阻陶瓷组合物包含氧化锌,相对于100摩尔所述氧化锌,换算成Co为0.30-10摩尔Co氧化物,0.10-10摩尔R氧化物(注意,R为选自 以R为0.10〜5摩尔的Cr氧化物,以Cr为基准,Y,La,Ce,Pr,Nd,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb和Lu组成的组, 分别以Ca或Sr计,选自Ca和Sr中的至少一种的至少一种氧化物为0.10〜5mol,Al,Ga,In的Al,Ga,In中的至少一种选自Al,Ga,In的氧化物为0.0005〜5mol, 和钛酸钡0.10〜5摩尔的BaTiO 3换算。

    Transient voltage protection device

    公开(公告)号:US12027292B2

    公开(公告)日:2024-07-02

    申请号:US17829569

    申请日:2022-06-01

    CPC classification number: H01C1/142 H01C7/1006 H01C7/123 H01C1/148

    Abstract: A transient voltage protection device includes: an element body; a cavity portion provided in the element body; a pair of internal electrodes disposed in the element body; and a pair of external electrodes connected to the pair of internal electrodes. The pair of internal electrodes extend along a first direction and face each other in a second direction intersecting the first direction. The cavity portion includes a gap region located between the pair of internal electrodes in the second direction. A tip portion of at least one of the pair of internal electrodes is in contact with only the element body.

    Method for producing chip varistor and chip varistor

    公开(公告)号:US11302464B2

    公开(公告)日:2022-04-12

    申请号:US17230100

    申请日:2021-04-14

    Abstract: A chip varistor includes an element body exhibiting varistor characteristics, internal electrodes containing a first electrically conductive material, and an intermediate conductor containing a second electrically conductive material. The intermediate conductor is separated from the internal electrodes in a direction in which the internal electrodes oppose each other, and is disposed between the internal electrodes. At least a part of the intermediate conductor overlaps the internal electrodes in the direction in which the internal electrodes oppose each other. The element body includes a low resistance region in which the second electrically conductive material is diffused. The low resistance region is located between the first and second internal electrodes in the direction in which the first and second internal electrodes oppose each other.

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