Abstract:
A multilayer ceramic electronic device comprising: a ceramic element body, in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked, and at least a pair of external electrodes which are connected to the internal electrode layers on surfaces of the ceramic element body; a thickness of the dielectric layers is 0.4 μm or less, a width (W0) of the ceramic element body along a width-direction is 0.59 mm or less, a gap (Wgap) between an outer face of the ceramic element body and an end of the internal electrode layers along width-direction of the ceramic element body is 0.010 to 0.025 mm, and a ratio (Wgap/W0) of the gap with respect to the width is 0.025 or more.
Abstract:
A dielectric composition containing a crystalline phase represented by a general formula of Bi12SiO20 and a crystalline phase represented by a general formula of Bi2SiO5 as the main components. The dielectric composition contains preferably 5 mass % to 99 mass % of the Bi2SiO5 crystalline phase, and more preferably 30 mass % to 99 mass %.
Abstract:
A dielectric ceramic composition includes a barium titanate, an oxide of an R element, an oxide of an M element, and an oxide containing Si. The R element is one or more elements selected from Eu, Gd, Tb, Dy, Y, Ho, and Yb. The M element is one or more elements selected from Mg, Ca, Mn, V, and Cr. A ratio of an amount of the oxide of the R element in terms of R2O3 to an amount of the oxide containing Si in terms of SiO2 is 0.8:1 to 2.2:1. A ratio of an amount of the oxide of the M element in terms of MO to the amount of the oxide containing Si in terms of SiO2 is 0.2:1 to 1.8:1.50% or more of the number of dielectric particles constituting the dielectric ceramic composition is core-shell dielectric particles having a core-shell structure.
Abstract:
The object of the present invention is to provide the multilayer ceramic capacitor having no deterioration of dielectric properties even in case an inhibitor of an internal electrode layer is pushed out to a dielectric layer when sintering. The multilayer ceramic capacitor 1 including a capacitor element body 10 comprising a dielectric layer 2 and an internal electrode layer 3 stacked in an alternating manner, wherein when Za represents Zr concentration of an dielectric particle in a center part 6 of the dielectric layer 2 and Zb represents Zr concentration of a dielectric particle near the internal electrode layer, 0
Abstract:
A multilayer ceramic electronic device comprising: a ceramic element body, in which a plurality of dielectric layers and a plurality of internal electrode layers are alternately stacked, and at least a pair of external electrodes which are connected to the internal electrode layers on surfaces of the ceramic element body; a thickness of the dielectric layers is 0.4 μm or less, a width (W0) of the ceramic element body along a width-direction is 0.59 mm or less, a gap (Wgap) between an outer face of the ceramic element body and an end of the internal electrode layers along width-direction of the ceramic element body is 0.010 to 0.025 mm, and a ratio (Wgap/W0) of the gap with respect to the width is 0.025 or more.
Abstract:
A dielectric ceramic composition including a main component having a perovskite crystal structure expressed by general formula ABO3, a first sub-component of an oxide of a rare earth element, and a second sub-component of an oxide of Si, and at least dielectric particles having a core-shell structure and segregated particles, in which a concentration of the rare earth element in the segregated particles is two or more times an average concentration of the rare earth element in a shell portion of the dielectric particles having the core-shell structure, and an area of the region occupied by the segregated particles is 5.0% or less and an average of cross-sectional areas of the respective segregated particles is 0.075 μm2 or less in a cross-section obtained by cutting the dielectric ceramic composition.
Abstract:
The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)α—B—O, x, y and z meet the conditions of 0≦x≦1, 0≦y≦1, 0≦z≦1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by α, 0.5≦α≦1.5.
Abstract:
An element body of a multilayer capacitor has a plurality of first electrodes and a plurality of second electrodes. At least one of the first electrodes is curved such that a first main body portion is located on an outer side of a first extending portion in a first direction, and at least one of the second electrodes is curved such that a second main body portion is located on an outer side of a second extending portion in the first direction. The following expressions (1) to (6) are satisfied for lengths L0 to L4 in a second direction and distances TL1 to TL3 between main surfaces.
Abstract:
A dielectric composition includes a main phase and segregation phases each including RE (at least one rare earth element). The main phase includes a main component having a perovskite crystal structure of ABO3 (A is one or more selected from Ba, Sr, and Ca, and B is one or more selected from Ti, Zr, and Hf). The segregation phases are classified into first segregation phases whose atomic ratio of Si to RE is 0 or more and 0.20 or less and second segregation phases whose atomic ratio of Si to the RE is more than 0.20. 0≤S1/S2≤0.10 is satisfied on a cross section of the dielectric composition, where S1 is an area ratio of the first segregation phases, and S2 is an area ratio of the second segregation phases. An atomic ratio of Si to RE in the second segregation phases is 0.80 or less on average.
Abstract:
An electronic component includes an element body having a functional layer and an internal electrode layer, and an external electrode formed on a surface of the element body and connected to the internal electrode layer electrically. The chlorine concentration of the element body of the electronic component is 10 ppm or less.