公开(公告)号：US09643890B2

公开(公告)日：2017-05-09

申请号：US14661881

申请日：2015-03-18

Applicant: TDK CORPORATION

Inventor： Raitarou Masaoka ,  Toshihiko Kaneko ,  Yuki Yamashita ,  Hiroki Uchiyama ,  Saori Takeda ,  Yuji Sezai ,  Shirou Ootsuki

IPC: C04B35/48 ,  C04B35/49 ,  C04B35/465 ,  H01B3/12 ,  C04B35/47 ,  C04B35/486 ,  C04B35/638

CPC classification number: C04B35/49 ,  C04B35/47 ,  C04B35/48 ,  C04B35/486 ,  C04B35/638 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/6562 ,  C04B2235/79 ,  C04B2235/80 ,  H01B3/12

Abstract: A dielectric composition contains major components that are an A-group containing major components that are at least two selected from the group consisting of Ba, Ca, and Sr and a B-group which contains a major component that is selected from Zr and Ti and which contains at least Zr. The dielectric composition contains an amorphous substance containing the A-group and the B-group and a crystalline substance containing the A-group and the B-group. In the dielectric composition, the inequality 0.5≦α≦1.5 holds, where α is the molar ratio of the A-group to the B-group.

公开(公告)号：US09947469B2

公开(公告)日：2018-04-17

申请号：US14738405

申请日：2015-06-12

Applicant: TDK CORPORATION

Inventor： Masahito Furukawa ,  Masanori Kosuda ,  Saori Takeda

IPC: C01G23/00 ,  C01G25/00 ,  C01G35/00 ,  H01G4/30 ,  H01G4/10 ,  H01G4/12 ,  H01G4/33 ,  C23C14/08 ,  C04B35/49 ,  C04B35/495 ,  C23C14/00 ,  C23C14/28 ,  C23C18/12

CPC classification number: H01G4/10 ,  C04B35/49 ,  C04B35/495 ,  C04B2235/3201 ,  C04B2235/3203 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3251 ,  C04B2235/79 ,  C23C14/0036 ,  C23C14/08 ,  C23C14/088 ,  C23C14/28 ,  C23C18/1216 ,  C23C18/1225 ,  C23C18/125 ,  C23C18/1254 ,  H01G4/1227

Abstract: A thin-film dielectric having a higher dielectric constant than usual ones and not requiring a special single crystal substrate, and a large-capacity thin-film capacitor element using the thin-film dielectric, in which a BaTiO3-based perovskite solid solution and a KNbO3-based perovskite solid solution are alternately formed to form a crystal structure gradient region where a lattice constant continuously changes at the interface, and thus crystal lattice strain occurs, thereby permitting the production of a thin-film dielectric having a high dielectric constant; also, a large-capacity thin-film capacitor element can be produced by using the thin-film dielectric of the present invention.

公开(公告)号：US09382163B2

公开(公告)日：2016-07-05

申请号：US14310212

申请日：2014-06-20

Applicant: TDK CORPORATION

Inventor： Toshihiko Kaneko ,  Saori Takeda ,  Yuki Yamashita ,  Junichi Yamazaki

IPC: C04B35/00 ,  C04B35/49 ,  H01L49/02

CPC classification number: C04B35/49 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/6562 ,  H01L28/40

Abstract: The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)α—B—O, x, y and z meet the conditions of 0≦x≦1, 0≦y≦1, 0≦z≦1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by α, 0.5≦α≦1.5.

Abstract translation: 本发明的目的在于提供一种非晶介质膜和电子元件，其中可以保持相对介电常数和静电电容的温度系数，并且即使电介质膜进一步薄化也可以提高耐电压。 本发明的非晶质介电体膜的特征在于，由作为主成分的无定形组合物构成的电介质膜，其中，A含有选自Ba，Ca，Sr中的至少2种以上的元素， B含有Zr。 当电介质膜的主要成分由（BaxCaySrz）α-B-O表示时，x，y和z分别满足0＆nlE; x＆nlE; 1,0，nlE; y＆nlE; 1,0和nlE; z＆nlE; 1的条件x + y + z = 1，x，y和z中的至少任意两个为0.1以上。 当A / B由α表示时，0.5＆nlE;α＆nlE; 1.5。

公开(公告)号：US10002714B2

公开(公告)日：2018-06-19

申请号：US15134799

申请日：2016-04-21

Applicant: TDK Corporation

Inventor： Saori Takeda ,  Masahito Furukawa ,  Masanori Kosuda ,  Shirou Ootsuki ,  Yasunori Harada

IPC: H01G4/33 ,  H01G4/12 ,  H01G4/08 ,  C04B35/468 ,  C04B35/622 ,  C04B35/626 ,  C23C14/08

CPC classification number: H01G4/33 ,  C04B35/4682 ,  C04B35/62218 ,  C04B35/6261 ,  C04B2235/3208 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3241 ,  C04B2235/3244 ,  C04B2235/3262 ,  C04B2235/3281 ,  C04B2235/3286 ,  C04B2235/604 ,  C04B2235/6567 ,  C04B2235/787 ,  C04B2235/788 ,  C04B2235/79 ,  C23C14/088 ,  H01G4/085 ,  H01G4/1227 ,  H01G4/1245

Abstract: The present invention relates to a dielectric element such as a thin-film capacitor including a dielectric film. The dielectric film contains a main component represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0

公开(公告)号：US09481606B2

公开(公告)日：2016-11-01

申请号：US14529623

申请日：2014-10-31

Applicant: TDK CORPORATION

Inventor： Saori Takeda ,  Toshihiko Kaneko ,  Yuki Yamashita ,  Yuji Sezai

IPC: H01L21/02 ,  C04B35/453 ,  H01G4/12 ,  H01G4/33 ,  H01L49/02 ,  H01G4/08

CPC classification number: C04B35/453 ,  C04B35/16 ,  C04B2235/3298 ,  C04B2235/3427 ,  C04B2235/604 ,  C04B2235/6567 ,  C04B2235/80 ,  H01G4/085 ,  H01G4/1209 ,  H01G4/1272 ,  H01G4/33 ,  H01L28/55

Abstract: A dielectric composition containing a crystalline phase represented by a general formula of Bi12SiO20 and a crystalline phase represented by a general formula of Bi2SiO5 as the main components. The dielectric composition contains preferably 5 mass % to 99 mass % of the Bi2SiO5 crystalline phase, and more preferably 30 mass % to 99 mass %.

Abstract translation: 含有由通式Bi 12 SiO 20表示的结晶相和由通式Bi 2 SiO 5表示的结晶相作为主要成分的电介质组合物。 电介质组合物优选含有5质量％〜99质量％的Bi 2 SiO 5结晶相，更优选含有30质量％〜99质量％。

公开(公告)号：US09455087B2

公开(公告)日：2016-09-27

申请号：US14833614

申请日：2015-08-24

Applicant: TDK CORPORATION

Inventor： Saori Takeda ,  Masahito Furukawa ,  Masanori Kosuda ,  Yuji Sezai

IPC: C04B35/00 ,  H01G4/10 ,  H01G4/33 ,  H01G4/12 ,  H01G4/20

CPC classification number: H01G4/10 ,  H01G4/1227 ,  H01G4/20 ,  H01G4/33

Abstract: A dielectric film contains as a main component a dielectric composition represented by the general formula (Ba1-xCax)z(Ti1-yZry)O3 wherein 0.001≦x≦0.400, 0.001≦y≦0.400, and 0.900≦z

Abstract translation: 介电膜含有作为主要成分的由通式（Ba1-xCax）z（Ti1-yZry）O3表示的电介质组合物，其中0.001≤x≤0.400,0.001≤y≤0.40,0.900≤z<0.995。 在介电组合物的X射线衍射图中，介电组合物在由通式表示的四方晶系的（001）面衍射峰位置2θt和（100）面之间具有0.00°≤2θc-2θt<0.20°的关系 由通式表示的立方结构的衍射峰位置2θc。