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    AMORPHOUS DIELECTRIC FILM AND ELECTRONIC COMPONENT
    3.
    发明申请
    AMORPHOUS DIELECTRIC FILM AND ELECTRONIC COMPONENT 有权
    非晶电介质膜和电子元件

    公开(公告)号：US20140378295A1

    公开(公告)日：2014-12-25

    申请号：US14310212

    申请日：2014-06-20

    Applicant: TDK Corporation

    Inventor： Toshihiko KANEKO ,  Saori TAKEDA ,  Yuki YAMASHITA ,  Junichi YAMAZAKI

    IPC: C04B35/057 ,  C04B35/465 ,  C04B35/49

    CPC classification number: C04B35/49 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/6562 ,  H01L28/40

    Abstract: The present invention aims to provide an amorphous dielectric film and an electronic component in which the relative permittivity and the temperature coefficient of electrostatic capacitance can be maintained and the withstand voltage can be increased even if the dielectric film is further thinned. The amorphous dielectric film of the present invention is characterized in that it is a dielectric film composed of an amorphous composition with A-B—O as the main component, wherein A contains at least two elements selected from the group consisting of Ba, Ca and Sr, and B contains Zr. When the main component of the dielectric film is represented by (BaxCaySrz)α—B—O, x, y and z meet the conditions of 0≦x≦1, 0≦y≦1, 0≦z≦1, respectively, x+y+z=1 and at least any two of x, y and z are 0.1 or more. When A/B is represented by α, 0.5≦α≦1.5.

    Abstract translation: 本发明的目的在于提供一种非晶介质膜和电子元件，其中可以保持相对介电常数和静电电容的温度系数，并且即使电介质膜进一步薄化也可以提高耐电压。 本发明的非晶质介电体膜的特征在于，由作为主成分的无定形组合物构成的电介质膜，其中，A含有选自Ba，Ca，Sr中的至少2种以上的元素， B含有Zr。 当电介质膜的主要成分由（BaxCaySrz）α-B-O表示时，x，y和z分别满足0＆nlE; x＆nlE; 1,0，nlE; y＆nlE; 1,0和nlE; z＆nlE; 1的条件x + y + z = 1，x，y和z中的至少任意两个为0.1以上。 当A / B由α表示时，0.5＆nlE;α＆nlE; 1.5。

    THIN FILM CAPACITOR, ITS MANUFACTURING METHOD, AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE THIN FILM CAPACITOR
    7.
    发明公开
    THIN FILM CAPACITOR, ITS MANUFACTURING METHOD, AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE THIN FILM CAPACITOR 审中-公开

    公开(公告)号：US20230335579A1

    公开(公告)日：2023-10-19

    申请号：US18012553

    申请日：2020-12-24

    Applicant: TDK Corporation

    Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

    IPC: H01L23/495 ,  H01L25/16

    CPC classification number: H01L28/84 ,  H01L25/16

    Abstract: A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member provided on the upper surface of the metal foil to surround the first and second electrode layers. The metal foil has an outer peripheral area which is positioned outside an area surrounded by the insulating member and which is not covered with the first and second electrode layers. A height of the electrode layer is equal to or higher than a height of the insulating member. This makes the outer peripheral portion of the thin film capacitor have a step-like shape.

    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME
    8.
    发明公开
    THIN FILM CAPACITOR AND ELECTRONIC CIRCUIT SUBSTRATE HAVING THE SAME 审中-公开

    公开(公告)号：US20230260713A1

    公开(公告)日：2023-08-17

    申请号：US18012820

    申请日：2020-12-24

    Applicant: TDK Corporation

    Inventor： Daiki ISHII ,  Yoshihiko YANO ,  Yuki YAMASHITA ,  Kenichi YOSHIDA ,  Tetsuhiro TAKAHASHI

    IPC: H01G4/33 ,  H01G4/228 ,  H01G4/005 ,  H01G4/06

    CPC classification number: H01G4/33 ,  H01G4/228 ,  H01G4/005 ,  H01G4/06

    Abstract: To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle θa formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

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