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    MOS CAPACITORS WITH INTERLEAVED FINGERS AND METHODS OF FORMING THE SAME
    1.
    发明申请
    MOS CAPACITORS WITH INTERLEAVED FINGERS AND METHODS OF FORMING THE SAME 有权
    具有交替指状的MOS电容器及其形成方法

    公开(公告)号：US20160294367A1

    公开(公告)日：2016-10-06

    申请号：US15085669

    申请日：2016-03-30

    申请人： TDK Corporation

    发明人： Jim Bao ,  Rien Gahlsdorf

    IPC分类号： H03H19/00 ,  G05F3/20 ,  H01L49/02

    CPC分类号： H03H19/004 ,  G05F3/205 ,  H01L28/40 ,  H01L29/66181 ,  H01L29/94 ,  H03H7/0153 ,  H03H7/12 ,  H03H7/40 ,  H03H7/463 ,  H03H2250/00

    摘要： A capacitor structure is described. The capacitor structure includes a substrate; a plurality of source/drain regions formed in said substrate to form an active area, the active area having an active area width; and a first and a second plurality of gates formed above the substrate. Each gate of the first and second plurality of gates having a gate width. The gate width is configured to be less than the active area width and each gate of the first and second plurality of gates is formed between a pair of source/drain regions of the plurality of source/drain regions such that the first plurality of gates interleave with the second plurality of gates.

    摘要翻译： 描述电容器结构。 电容器结构包括基板; 形成在所述衬底中以形成有源区的多个源极/漏极区，所述有源区具有有效面积宽度; 以及形成在所述衬底上方的第一和第二多个栅极。 第一和第二多个栅极的每个栅极具有栅极宽度。 栅极宽度被配置为小于有源区宽度，并且第一和第二多个栅极的每个栅极形成在多个源极/漏极区域的一对源极/漏极区域之间，使得第一多个栅极交错 与第二多个门。

    APPARATUS AND METHODS FOR MOS CAPACITOR STRUCTURES FOR VARIABLE CAPACITOR ARRAYS
    2.
    发明申请
    APPARATUS AND METHODS FOR MOS CAPACITOR STRUCTURES FOR VARIABLE CAPACITOR ARRAYS 审中-公开
    用于可变电容器阵列的MOS电容器结构的装置和方法

    公开(公告)号：US20160294369A1

    公开(公告)日：2016-10-06

    申请号：US15085863

    申请日：2016-03-30

    申请人： TDK Corporation

    发明人： Jim Bao ,  Rien Gahidorf

    IPC分类号： H03H19/00 ,  G05F3/20 ,  G05F3/24 ,  H01L49/02

    CPC分类号： G05F3/24 ,  G05F3/205 ,  H01L27/0811 ,  H01L27/1203 ,  H01L29/66189 ,  H01L29/93 ,  H01L29/94

    摘要： A capacitor structure is described. A capacitor structure including a substrate and at least one device formed on the substrate. The device including first and second sections. Each of the first and second sections including a plurality of source/drain regions formed in the substrate and a plurality of gates formed above the substrate such that each of the plurality of gates is formed between each pair of source/drain regions to form a section channel between each pair of source/drain regions. The plurality of gates of the first and second sections are coupled with each other.

    摘要翻译： 描述电容器结构。 一种电容器结构，包括衬底和形成在衬底上的至少一个器件。 该装置包括第一和第二部分。 第一部分和第二部分中的每一个包括形成在基板中的多个源极/漏极区域和形成在基板上方的多个栅极，使得多个栅极中的每一个形成在每对源极/漏极区域之间以形成部分 每对源/漏区之间的通道。 第一和第二部分的多个栅极彼此耦合。

    MOS CAPACITORS WITH HEAD-TO-HEAD FINGERS AND METHODS OF FORMING THE SAME
    4.
    发明申请
    MOS CAPACITORS WITH HEAD-TO-HEAD FINGERS AND METHODS OF FORMING THE SAME 有权
    具有头对头指状物的MOS电容器及其形成方法

    公开(公告)号：US20160294368A1

    公开(公告)日：2016-10-06

    申请号：US15085720

    申请日：2016-03-30

    申请人： TDK Corporation

    发明人： Jim Bao ,  Rien Gahlsdorf

    IPC分类号： H03H19/00 ,  G05F3/20 ,  G05F3/24 ,  H01L49/02

    CPC分类号： H03H19/004 ,  G05F3/205 ,  G05F3/24 ,  H01L28/40 ,  H01L29/66189 ,  H01L29/94 ,  H03H7/0153 ,  H03H7/12 ,  H03H7/40 ,  H03H7/463 ,  H03H2250/00

    摘要： A capacitor structure is described. The capacitor structure includes a substrate, a plurality of source/drain regions, a first plurality gates, and a second plurality of gates. The plurality of source/drain regions is formed in the substrate. The first and second plurality of gates is formed above the substrate. Each gate of the first and second plurality of gates has a gate width. The gate widths are configured to be less than an active area width and each gate of the first and second plurality of gates is formed between a pair of the source/drain regions of the plurality of source/drain regions. And, each gate of the first plurality of gates is configured to be in line with a corresponding gate of the second plurality of gates to form a head-to-head gate configuration.

    摘要翻译： 描述电容器结构。 电容器结构包括衬底，多个源极/漏极区，第一多个栅极和第二多个栅极。 在衬底中形成多个源极/漏极区域。 第一和第二多个栅极形成在衬底上。 第一和第二多个栅极的每个栅极具有栅极宽度。 栅极宽度被配置为小于有效面积宽度，并且第一和第二多个栅极的每个栅极形成在多个源极/漏极区域的一对源极/漏极区域之间。 并且，第一多个栅极的每个栅极被配置为与第二多个栅极的对应栅极对齐以形成头对头栅极配置。

    MOS CAPACITORS FOR VARIABLE CAPACITOR ARRAYS AND METHODS OF FORMING THE SAME
    5.
    发明申请
    MOS CAPACITORS FOR VARIABLE CAPACITOR ARRAYS AND METHODS OF FORMING THE SAME 审中-公开
    用于可变电容器阵列的MOS电容器及其形成方法

    公开(公告)号：US20160294366A1

    公开(公告)日：2016-10-06

    申请号：US15085572

    申请日：2016-03-30

    申请人： TDK Corporation

    发明人： Jim Bao ,  Rien Gahlsdorf

    IPC分类号： H03H19/00 ,  G05F3/20 ,  G05F3/24 ,  H01L49/02

    CPC分类号： G05F3/24 ,  G05F3/205 ,  H01L29/66181 ,  H01L29/94 ,  H03H7/0153 ,  H03H7/12 ,  H03H7/40 ,  H03H7/463 ,  H03H2250/00

    摘要： A capacitor structure is described. The capacitor structure includes a substrate, a plurality of source/drain regions formed in the substrate, and a plurality of gates formed above the substrate. The plurality of gates formed above the substrate such that each of the plurality of gates is formed between each pair of source/drain regions of the plurality of source/drain regions to form a channel between each pair of source/drain regions.

    摘要翻译： 描述电容器结构。 电容器结构包括衬底，形成在衬底中的多个源极/漏极区域和形成在衬底上方的多个栅极。 多个栅极形成在衬底上方，使得多个栅极中的每一个形成在多个源极/漏极区域的每对源极/漏极区域之间，以在每对源极/漏极区域之间形成沟道。