Strip line compensated balun and circuits formed therewith
    2.
    发明授权
    Strip line compensated balun and circuits formed therewith 失效
    条纹线补偿巴伦和形成的电路

    公开(公告)号:US3571722A

    公开(公告)日:1971-03-23

    申请号:US3571722D

    申请日:1967-09-08

    CPC classification number: H01P5/10

    Abstract: A strip line compensated unbalanced-to-balanced converter having an inherently wide bandwidth for impedance matching or filtering in strip line applications. A two-sided printed circuit board contains the unbalanced input circuit on one side and the balanced output circuit on the opposite side in the area of the strip line circuit. By analogy, the ''''balun'''' acts like a pushpull transformer having two output signals 180 electrical degrees out-of-phase from each other. Balun circuits find application as the coupling device for connecting the local oscillator signal to a mixer circuit. Another application of a strip line balun is in a harmonic generator wherein two baluns are used, one at the input and the other at the output.

    Low-capacitance planar varactor diode
    3.
    发明授权
    Low-capacitance planar varactor diode 失效
    低电容平面变压器二极管

    公开(公告)号:US3636420A

    公开(公告)日:1972-01-18

    申请号:US3636420D

    申请日:1970-02-02

    CPC classification number: H01L29/93 H01L29/00 Y10S148/031 Y10S148/05

    Abstract: A planar varactor diode for integrated circuit applications, especially at high frequencies, is disclosed. This diode has lowleakage currents, improved reversed bias characteristics, and reduced junction and MOS capacitance. The low-leakage currents are obtained by minimizing the surface perimeter of the device; the low-junction capacitance is obtained by reducing the junction area of the two active regions; and the reduced MOS capacitance is achieved by offsetting the anodic region underneath the anode contact.

    Integrated planar varactor diode
    4.
    发明授权
    Integrated planar varactor diode 失效
    集成平面变量二极管

    公开(公告)号:US3559005A

    公开(公告)日:1971-01-26

    申请号:US3559005D

    申请日:1969-03-07

    CPC classification number: H01L27/00 H01L29/86 Y10S148/037 Y10S148/05

    Abstract: DISCLOSED IN A PLANAR VARACTOR DIODE AND A METHOD OF PRODUCING THE SAME FOR INTEGRATED APPLICATIONS, ESPECIALLY AT HIGH FRQUENCIES. THIS DIODE HAS LOW LEAKAGE CURRENTS, IMPROVE REVERSE BIAS CHARACTERISTICS, AND REDUCED JUNCTION AND MOS CAPACITANCE. THE LOW LEAKAGE CURRENTS ARE OBTAINED BY MINIMIZING THE SURFACE PERIMETER OF THE DEVICE, THE LOW JUNCTION CAPACITANCE IS ATTAINED BY REDUCING THE JUNCTION AREA OF THE TWO ACTIVE REGIONS AND THE REDUCED MOS CAPACITANCE IS ACHIEVED BY FORMING A CAVITY BENEATH THE CONTACT OF THE ANODE REGION OR BY OFFSETTING THE ANODE REGION UNDERNEATH THE ANODE CONTACT.

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