公开(公告)号：US6420729B2

公开(公告)日：2002-07-16

申请号：US74796600

申请日：2000-12-27

申请人： TEXAS INSTRUMENTS INC

发明人： WALLACE ROBERT M ,  WILK GLEN D ,  WEI YI ,  HATTANGADY SUNIL V

IPC分类号： H01L21/28 ,  H01L21/316 ,  H01L21/318 ,  H01L21/334 ,  H01L21/8242 ,  H01L29/51 ,  H01L29/04

CPC分类号： H01L29/513 ,  H01L21/28167 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31604 ,  H01L27/1085 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66181

摘要： A method of making a semiconductor device and the device. The device, according to a first embodiment, is fabricated by providing a silicon (111) surface, forming on the surface a dielectric layer of crystalline silicon nitride and forming an electrode layer on the dielectric layer of silicon nitride. The silicon (111) surface is cleaned and made atomically flat. The dielectric layer if formed of crystalline silicon nitride by placing the surface in an ammonia ambient at a pressure of from about 1x10-7 to about 1x10-5 Torr at a temperature of from about 850° C. to about 1000° C. The electrode layer is heavily doped silicon. According to a second embodiment, there is provided a silicon (111) surface on which is formed a first dielectric layer of crystalline silicon nitride having a thickness of about 2 monolayers. A second dielectric layer compatible with silicon nitride and having a higher dielectric constant than silicon nitride is formed on the first dielectric layer and an electrode layer is formed over the second dielectric layer. A third dielectric layer of silicon nitride having a thickness of about 2 monolayers can be formed between the second dielectric layer and the electrode layer. The second dielectric layer is preferably taken from the class consisting of tantalum pentoxide, titanium dioxide and a perovskite material. Both silicon nitride layers can be formed as in the first embodiment. The electrode layer is preferably heavily doped silicon

摘要翻译： 制造半导体器件和器件的方法。 根据第一实施例的器件通过提供硅（111）表面来制造，在表面上形成结晶氮化硅的介电层并在氮化硅的介电层上形成电极层。 硅（111）表面被清洁并且原子地平坦。 如果由晶体氮化硅形成的电介质层，通过将表面放置在大约1×10-7至1×10-5乇的压力下，在大约850℃至大约1000℃的温度下。 层是重掺杂硅。 根据第二实施例，提供了一种硅（111）表面，在其上形成具有约2个单层厚度的结晶氮化硅的第一介电层。 与氮化硅相容并且具有比氮化硅更高的介电常数的第二电介质层形成在第一电介质层上，并且在第二电介质层上形成电极层。 可以在第二介电层和电极层之间形成具有约2个单层厚度的氮化硅的第三介电层。 第二电介质层优选取自五氧化二钽，二氧化钛和钙钛矿型材料。 可以如第一实施例那样形成氮化硅层。 电极层优选为重掺杂硅