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公开(公告)号:US20250140739A1
公开(公告)日:2025-05-01
申请号:US18498921
申请日:2023-10-31
Applicant: Texas Instruments Incorporated
Inventor: Kashyap Mohan , Daiki Komatsu , Amin Ahmad Sijelmassi
IPC: H01L23/00
Abstract: An example apparatus includes: a wire bond tool including a bond wire capillary having a central opening configured for receiving a bond wire in the central opening; a first laser path formed in the capillary configured to focus a first laser beam on the end of the bond wire to form a free air ball; and a second laser path formed in the capillary configured to focus a second laser beam on a bonding location beneath the capillary.
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公开(公告)号:US20250112182A1
公开(公告)日:2025-04-03
申请号:US18478226
申请日:2023-09-29
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Masamitsu Matsuura , Daiki Komatsu , Kengo Aoya , Ting-Ta Yen
Abstract: A semiconductor package includes a semiconductor wafer having a first connection pad and a second connection pad spaced apart by a semiconductor region of the semiconductor wafer. Portions of the semiconductor wafer are covered by a protective overcoat. The semiconductor package also includes a cap wafer mounted to the semiconductor wafer and overpassing the semiconductor region of the semiconductor wafer. The cap wafer extends between the first connection pad and the second connection pad of the semiconductor wafer. The semiconductor package further includes an insulation material overlaying the cap wafer. The insulation material comprising vias to the first connection pad and the second connection pad, the vias being filled with a conductive material.
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公开(公告)号:US10541220B1
公开(公告)日:2020-01-21
申请号:US16053199
申请日:2018-08-02
Applicant: Texas Instruments Incorporated
Inventor: Daiki Komatsu , Makoto Shibuya , Yi Yan , Hau Nguyen , Luu Thanh Nguyen , Anindya Poddar
IPC: H01L21/48 , H01L21/56 , H01L21/78 , H01L23/00 , H01L23/367 , H01L23/498 , H01L23/495 , H01L23/31
Abstract: Described examples provide integrated circuits and methods, including forming a conductive seed layer at least partially above a conductive feature of a wafer, forming a conductive structure on at least a portion of the conductive seed layer, performing a printing process that forms a polymer material on a side of the wafer proximate a side of the conductive structure, curing the deposited polymer material, and attaching a solder ball structure to a side of the conductive structure.
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公开(公告)号:US20180122731A1
公开(公告)日:2018-05-03
申请号:US15488594
申请日:2017-04-17
Applicant: Texas Instruments Incorporated
Inventor: Daiki Komatsu , Takafumi Ando
IPC: H01L23/498 , H01L21/78 , H01L21/48 , H01L23/495 , H01L23/00
CPC classification number: H01L23/49805 , H01L21/4828 , H01L21/561 , H01L23/3107 , H01L23/49548 , H01L23/49582 , H01L23/49861 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/92247 , H01L2224/97 , H01L2224/85 , H01L2224/32245 , H01L2924/00012 , H01L2924/00014 , H01L2924/00
Abstract: An integrated circuit chip package and method for making the same, wherein the integrated circuit chip package includes conductive leads. The method includes trenching a plurality of conductive lead structures along a parting line, plating the trenches with a plating layer, and singulating the lead frame assembly along the parting line to produce an integrated circuit chip package with conductive leads having unplated side portions and plated recessed portions.
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公开(公告)号:US20250140626A1
公开(公告)日:2025-05-01
申请号:US18495837
申请日:2023-10-27
Applicant: Texas Instruments Incorporated
Inventor: Masamitsu Matsuura , Daiki Komatsu , Kengo Aoya
Abstract: An electronic device includes a package structure having opposite first and second sides, opposite third and fourth sides spaced along a first direction, opposite fifth and sixth sides spaced along an orthogonal second direction, the first and second sides spaced along a third direction orthogonal to the first and second directions, and an opening extending into the first side along the third direction, a first semiconductor die having a first side exposed in the opening of the package structure and an opposite second side partially enclosed by the package structure, and a second semiconductor die electrically connected to the first semiconductor die, the second semiconductor die enclosed by the package structure and laterally spaced apart from the first semiconductor die.
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公开(公告)号:US20250038009A1
公开(公告)日:2025-01-30
申请号:US18361747
申请日:2023-07-28
Applicant: Texas Instruments Incorporated
Inventor: Kengo Aoya , Masamitsu Matsuura , Daiki Komatsu
IPC: H01L21/48 , H01L21/56 , H01L23/31 , H01L23/495
Abstract: A semiconductor package has a relief recess in the mold compound, extending around the perimeter over the leads. The relief recess has a relief width greater than a thickness of the leads under the relief recess. Top surfaces of the leads may be exposed at the relief recess, or may be covered by the mold compound under the relief recess. In both cases, a height difference between the mold compound under the relief recess and the leads under the relief recess is less than the thickness of the leads under the relief recess. A majority of exposed side faces of the leads are characteristic of sawn surfaces, which includes leads being free of vertical striations or having burrs along bottom edges. The semiconductor package is singulated by sawing through the leads.
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公开(公告)号:US20240379597A1
公开(公告)日:2024-11-14
申请号:US18777976
申请日:2024-07-19
Applicant: Texas Instruments Incorporated
Inventor: Masamitsu Matsuura , Daiki Komatsu
IPC: H01L23/00 , H01L23/31 , H01L23/528
Abstract: A wafer chip-scale package (WCSP) includes a substrate including a semiconductor surface layer including circuitry configured for at least one function having at least a top metal interconnect layer thereon that includes at least one bond pad coupled to a node in the circuitry. A redistribution layer (RDL) including a bump pad is coupled by a trace to metal filled plugs through a passivation layer to the bond pad. A solder ball is on the bump pad, and a dielectric ring is on the bump pad that has an inner area that is in physical contact with the solder ball.
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公开(公告)号:US20250074765A1
公开(公告)日:2025-03-06
申请号:US18456585
申请日:2023-08-28
Applicant: Texas Instruments Incorporated
Inventor: Daiki Komatsu , Masamitsu Matsuura , Mao Sugeno
Abstract: An electronic device includes first and second semiconductor dies, the first semiconductor die having: a side extending in a first plane of orthogonal first and second directions; a sensor circuit along the side; and a conductive terminal extending outward from the side along an orthogonal third direction, and the second semiconductor die bonded to the first semiconductor die and having: a bottom side; a lateral side; and an insulation layer, the bottom side spaced apart from and facing the side of the first semiconductor die to form a protected chamber for the sensor circuit, the lateral side of the second semiconductor die spaced apart from the conductive terminal along the first direction, the insulation layer extending along the lateral side of the second semiconductor die, and the insulation layer spaced apart from and facing the conductive terminal along the first direction.
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公开(公告)号:US20250006575A1
公开(公告)日:2025-01-02
申请号:US18217504
申请日:2023-06-30
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor: Daiki Komatsu , Hidetoshi Inoue
Abstract: A semiconductor package includes a substrate, a semiconductor die, metal interconnects, the semiconductor die being mounted to the substrate via the metal interconnects, an inductor mounted to the substrate, a magnetic material encapsulating the semiconductor die, the inductor, and the metal interconnects, the magnetic material including metal particles suspended in a first insulation material, and a second insulation material covering the magnetic material, wherein the second insulation material is substantially free of metal particles.
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公开(公告)号:US12057417B2
公开(公告)日:2024-08-06
申请号:US16739578
申请日:2020-01-10
Applicant: Texas Instruments Incorporated
Inventor: Masamitsu Matsuura , Daiki Komatsu
IPC: H01L23/528 , H01L23/00 , H01L23/31
CPC classification number: H01L24/05 , H01L23/3114 , H01L23/528 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/0231 , H01L2224/0237 , H01L2224/0362 , H01L2224/03622 , H01L2224/0391 , H01L2224/0401 , H01L2224/05567 , H01L2224/05569 , H01L2224/11013 , H01L2224/11334
Abstract: A wafer chip-scale package (WCSP) includes a substrate including a semiconductor surface layer including circuitry configured for at least one function having at least a top metal interconnect layer thereon that includes at least one bond pad coupled to a node in the circuitry. A redistribution layer (RDL) including a bump pad is coupled by a trace to metal filled plugs through a passivation layer to the bond pad. A solder ball is on the bump pad, and a dielectric ring is on the bump pad that has an inner area that is in physical contact with the solder ball.
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